VFR PHOENIX BOX Search Results

BAS16WT1

Abstract: BAS16WT1G BAW62 diode marking code A6
Contextual Info: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)

vfr phoenix box

Abstract: 2x BAW62
Contextual Info: BAS16M3T5G Preferred Device Product Preview Silicon Switching Diode Features • This is a Pb−Free Device http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge)

BAW62

Abstract: DA121TT1 DA121TT1G pad6a
Contextual Info: DA121TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 80 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA

BAS16DXV6T1

Abstract: BAS16DXV6T1G BAS16DXV6T5 BAS16DXV6T5G BAW62
Contextual Info: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Max Unit 6 1 Continuous Reverse Voltage VR 75 V 4 3 Recurrent Peak Forward Current IF 200 mA

Contextual Info: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500 mA

ANSI Y14.5

Abstract: MAL100
Contextual Info: MPSW05 MPSW06 NPN ONE WATT SiLICON AMPLIFIER TRANSISTORS designed for use as medium-power @ High Collector-Emitter V BR CEO = 60 Vdc (Min) = 80 Vdc (Min) @ Low Collector-Emitter vCE(sat) I Collector-Base Voltage Emitter-Base Voltage ~‘ Total Power Dis~@$$:@

NSD914XV2T1

Contextual Info: NSD914XV2T1 Preferred Device High−Speed Switching Diode • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package http://onsemi.com 1 CATHODE MAXIMUM RATINGS (TA = 25°C)

BAV99LT1G

Abstract: BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G
Contextual Info: BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage

Diode marking CODE 5M SOD

Abstract: NSD914XV2T1G NSD914XV2T1
Contextual Info: NSD914XV2T1 Preferred Device High−Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available

BAL99LT1

Abstract: BAL99LT1G
Contextual Info: BAL99LT1 Switching Diode Features • Pb−Free Package is Available http://onsemi.com ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Maximum ratings are those values beyond which device damage can occur.

BAS16HT1G

Abstract: marking 25 SOD-323 marking code onsemi Diode A6 BAS16HT1 A6 marking diode
Contextual Info: BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com 1 CATHODE 2 ANODE Maximum ratings are those values beyond which device damage can occur.

BAS16XV2T1

Abstract: BAS16XV2T1G A6 marking diode
Contextual Info: BAS16XV2T1 Preferred Device Switching Diode • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit

BAV99WT1G

Abstract: BAV99LT1 BAV99RWT1 BAV99RWT1G BAV99WT1
Contextual Info: BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Packages are Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection

Contextual Info: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current

BAS16LT1

Abstract: A6 SOT-23
Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAS16LT1 3 0 CATHODE ^ 0 1 ANODE M o to r o la P re fe rre d D e v ic e MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 Vdc if 200 m Adc 'FM fsurge 500 mAdc Symbol Max

TRF marking sot23

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 o \4 CATHODE o 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Unit Vr 75 Vdc if 200 mAdc ¡FMfsurge 500 mAdc Symbol

Contextual Info: MOTOROLA Order this document by BAV99WT1/D SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 S C -70/S O T-323 Dual Series Sw itching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection

BAV99LT1-D

Abstract: BAV99LT1
Contextual Info: MOTOROLA Order this document by BAV99LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 Motorola Preferred Device 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR

BAV99LT1

Abstract: BAV99RWT1 BAV99WT1 SC MOTOROLA
Contextual Info: MOTOROLA Order this document by BAV99WT1/D SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications 3 • ESD Protection

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

BUL45D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's  Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient

c 458 c transistor

Abstract: 100 Amp current 1300 volt diode BUD44D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by BUD44D2/D SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient