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    VFBGA PACKAGE Search Results

    VFBGA PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    VFBGA PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VFBGA

    Abstract: BV48A BV36A
    Text: Package Diagram VFBGA 36-Lead VFBGA 6 x 8 x 1 mm BV36A 51-85149-* 1 Package Diagram 48-Lead VFBGA (6 x 8 x 1 mm) BV48A 51-85150-* 2


    Original     		36-Lead BV36A 48-Lead BV48A VFBGA BV48A BV36A PDF

    VFBGA

    Abstract: No abstract text available
    Text: Plastic Packages for Integrated Circuits Very Thin, Fine Pitch, Plastic Ball Grid Array Package VFBGA V81.5x5A D A1 CORNER 81 BALL VERY THIN, FINE PITCH, PLASTIC BALL GRID ARRAY PACKAGE (VFBGA) B A SYMBOL E (4x) 0.10 C TOP VIEW MIN NOMINAL MAX NOTES A 0.78


    Original     		5M-1994. VFBGA PDF

    LV 1084 73

    Abstract: LV 373A BGA PACKAGE thermal profile LV 1084 land pattern for tvSOP 90 ball VFBGA micro pitch BGA VA244 VFBGA LVTH2245
    Text: Application Report SZZA028A - November 2001 8-Bit Linear and Logic Families in 20-Ball, 0.65-mm Pitch, Very-Thin, Fine-Pitch BGA VFBGA Packages Frank Mortan and Mark Frimann Standard Linear & Logic ABSTRACT Texas Instruments 20-ball MicroStar Jr. package is a standardized JEDEC VFBGA


    Original     		SZZA028A 20-Ball, 65-mm 20-ball LV 1084 73 LV 373A BGA PACKAGE thermal profile LV 1084 land pattern for tvSOP 90 ball VFBGA micro pitch BGA VA244 VFBGA LVTH2245 PDF

    VFBGA

    Abstract: No abstract text available
    Text: Plastic Packages for Integrated Circuits Very Thin, Fine Pitch, Plastic Ball Grid Array Package VFBGA V49.4x4 A D 49 BALL VERY THIN, FINE PITCH, PLASTIC BALL GRID ARRAY PACKAGE (VFBGA) B A1 CORNER SYMBOL E 0.10 C (4x) TOP VIEW MIN NOMINAL MAX NOTES A 0.78


    Original     		5M-1994. VFBGA PDF

    VFBGA 120

    Abstract: VFBGA package tray tray 23X23 10x14 239.2 AN 7823 chippac tray 8X14 vFBGA* 96 bALL
    Text: FBGA-SD Fine Pitch Ball Grid Array - Stacked Die • FBGA-SD: Laminate substrate based enabling 2 & 4 layers of routing flexibility • FBGA-T-SD: Single metal layer tape based substrate with dense routing & good electrical performance • Available in 1.4mm LFBGA-SD , 1.2mm (TFBGASD/TFBGA-T-SD), 1.0mm (VFBGA-SD/VFBGA-TSD) & 0.80mm (WFBGA-SD) maximum package


    Original     		PDF

    mt29f4g16abchc

    Abstract: 63-ball Micron NAND 8Gb SLC MT29F4G16A MT29F4G MT29F4G16AB MT29F4G16ABC
    Text: MT Login Sign up for Access Home > Products > NAND Flash > NAND Flash Part Catalog > MT29F4G16ABCHC 4Gb Mass Storage : MT29F4G16ABCHC RSS part feed: Density: 4Gb Part Status: Production RoHS: Yes Depth: 256Mb Width: x16 Voltage: 1.8V Package: VFBGA Pin Count: 63-ball


    Original     		MT29F4G16ABCHC 256Mb 63-ball MT29F4G16ABCHC Micron NAND 8Gb SLC MT29F4G16A MT29F4G MT29F4G16AB MT29F4G16ABC PDF

    CSR BC212

    Abstract: MDR741F CSR BLUECORE VIRTUAL MACHINE CSR BlueCore 4 Application Program Interface BlueCore 3 csr bluetooth csr BC02 BlueCore 2 External casira casira csr crystal trim kit BC212015ADN-E4
    Text: Product Data Sheet Device Features BlueCore 2-External Low power 1.8V operation TM Small footprint in 96-Ball VFBGA Package 6x6mm Single Chip Bluetooth System Fully qualified Bluetooth component Full speed class 2 Bluetooth operation with full 7 slave piconet support


    Original     		96-Ball -40T105 BC212015-ds-001b CSR BC212 MDR741F CSR BLUECORE VIRTUAL MACHINE CSR BlueCore 4 Application Program Interface BlueCore 3 csr bluetooth csr BC02 BlueCore 2 External casira casira csr crystal trim kit BC212015ADN-E4 PDF

    vFBGA* 96 bALL

    Abstract: Amkor Wafer level mold compound amkor cabga thermal resistance BGA 256 PACKAGE thermal resistance Amkor Technology CABGA CTBGA MO-195 BGA PACKAGE thermal resistance amkor cabga
    Text: LAMINATE data sheet CABGA/CTBGA/CVBGA Features: ChipArray Packages: ChipArray® BGA CABGA / LFBGA Thin ChipArray® BGA (CTBGA / TFBGA) Very Thin ChipArray® BGA (CVBGA / VFBGA) Amkor’s ChipArray® packages are laminatebased Ball Grid Array (BGA) packages that are


    Original     		PDF

    962n

    Abstract: No abstract text available
    Text: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns


    Original     		09005aef80ec6f63 pdf/09005aef80ec6f46 962n PDF

    BCR100

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc


    Original     		128Mb 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ BCR100 PDF

    MT45W8MW16BGX

    Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
    Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc


    Original     		128Mb MT45W8MW16BGX 54-Ball 09005aef80ec6f79 pdf/09005aef80ec6f65 MT45W8MW16BGX MT45W8MW16BGX-701LWT 700000H-7FFFFFH PDF

    SR52

    Abstract: FY618 SR-52
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SR52 FY618 SR-52 PDF

    smd transistor bq

    Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd transistor bq A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150 PDF

    micron memory sram

    Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
    Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ


    Original     		128Mb MT45W8MW16BGX 54-Ball 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ micron memory sram a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages


    Original     		MT45W4MW16BFB MT45W2MW16BFB 54-Ball 09005aef80be1fbd PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W2MW16PAFA MT45W1MW16PAFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size


    Original     		32Mb--standard) 32Mb--low-power 09005aef80d481d3 pdf/09005aef80d48266 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYWB0124AB West Bridge : Antioch™ USB/Mass Storage Peripheral Controller 1.0 Features • • • • DMA slave support Ultra low power, 1.8V core operation Low power modes Small footprint, 6x6mm VFBGA and less than 4x4mm WLCSP • Selectable clock input frequencies


    Original     		CYWB0124AB CYWB0124AB-FDXI CYWB0124ABX-FDXI PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for


    Original     		MT28F1284L30 80-Ball 16-bit) 09005aef8115e8b3 MT28F1284L30 PDF

    JESD51-9

    Abstract: VFBGA package tray AN 7823 JESD51-2 vFBGA* 96 bALL WFBGA lfbga Encapsulation thermal resistance TRAY 15X15 tfBGA PACKAGE thermal resistance tray vfbga
    Text: FBGA Fine Pitch Ball Grid Array • Array molded, cost effective, space saving package solution • Available in 1.40mm LFBGA , 1.20mm (TFBGA), and 1.00mm (VFBGA), 0.80mm (WFBGA) and 0.55mm (UFBGA) maximum thickness • Laminate substrate based package which enables 2 and 4 layers of


    Original     		PDF

    Micron 32MB NOR FLASH

    Abstract: 0-30v power DEVICE MARKING CODE table INFINEON transistor marking label infineon application note marking code C5 RCR Resistor active suspension sensor micron cmos sensor connection
    Text: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY MT45W2MW16BAFB MT45W1MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Random Access Time: 70ns, 85ns


    Original     		MT45W2MW16BAFB MT45W1MW16BAFB 54-Ball Ini80ec6f46 09005aef80ec6f63 pdf/09005aef80ec6f46 Micron 32MB NOR FLASH 0-30v power DEVICE MARKING CODE table INFINEON transistor marking label infineon application note marking code C5 RCR Resistor active suspension sensor micron cmos sensor connection PDF

    Untitled

    Abstract: No abstract text available
    Text: USB3290 Small Footprint Hi-Speed USB 2.0 Device PHY with UTMI Interface PRODUCT FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ Data Brief Available in a 40 ball lead-free RoHS compliant 4 x 4 x 0.9mm VFBGA package Interface compliant with the UTMI specification


    Original     		USB3290 60MHz, 480Mbps 12Mbps 24MHz 150mA USB3290 USB3290-FH PDF

    FX109

    Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		MT28F644W18 MT28F644W30 56-Ball 16-bit) 09005aef8098d2b5 MT28F644W30 FX109 FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns


    Original     		MT45W4MW16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2ML16PFA 48-Ball 09005aef80be1ee8 PDF

    MT45W8MW16BGX

    Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
    Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ


    Original     		128Mb MT45W8MW16BGX 54-Ball 39nsH 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ MT45W8MW16BGX MT45W8MW16BGX-701LWT BDQ8 CSP3-20 PDF