LV 1084 73
Abstract: LV 373A BGA PACKAGE thermal profile LV 1084 land pattern for tvSOP 90 ball VFBGA micro pitch BGA VA244 VFBGA LVTH2245
Text: Application Report SZZA028A - November 2001 8-Bit Linear and Logic Families in 20-Ball, 0.65-mm Pitch, Very-Thin, Fine-Pitch BGA VFBGA Packages Frank Mortan and Mark Frimann Standard Linear & Logic ABSTRACT Texas Instruments 20-ball MicroStar Jr. package is a standardized JEDEC VFBGA
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SZZA028A
20-Ball,
65-mm
20-ball
LV 1084 73
LV 373A
BGA PACKAGE thermal profile
LV 1084
land pattern for tvSOP
90 ball VFBGA
micro pitch BGA
VA244
VFBGA
LVTH2245
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VFBGA 120
Abstract: VFBGA package tray tray 23X23 10x14 239.2 AN 7823 chippac tray 8X14 vFBGA* 96 bALL
Text: FBGA-SD Fine Pitch Ball Grid Array - Stacked Die • FBGA-SD: Laminate substrate based enabling 2 & 4 layers of routing flexibility • FBGA-T-SD: Single metal layer tape based substrate with dense routing & good electrical performance • Available in 1.4mm LFBGA-SD , 1.2mm (TFBGASD/TFBGA-T-SD), 1.0mm (VFBGA-SD/VFBGA-TSD) & 0.80mm (WFBGA-SD) maximum package
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CSR BC212
Abstract: MDR741F CSR BLUECORE VIRTUAL MACHINE CSR BlueCore 4 Application Program Interface BlueCore 3 csr bluetooth csr BC02 BlueCore 2 External casira casira csr crystal trim kit BC212015ADN-E4
Text: Product Data Sheet Device Features BlueCore 2-External Low power 1.8V operation TM Small footprint in 96-Ball VFBGA Package 6x6mm Single Chip Bluetooth System Fully qualified Bluetooth component Full speed class 2 Bluetooth operation with full 7 slave piconet support
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96-Ball
-40T105
BC212015-ds-001b
CSR BC212
MDR741F
CSR BLUECORE VIRTUAL MACHINE
CSR BlueCore 4 Application Program Interface
BlueCore 3 csr
bluetooth csr BC02
BlueCore 2 External
casira
casira csr crystal trim kit
BC212015ADN-E4
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BCR100
Abstract: No abstract text available
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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128Mb
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
BCR100
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MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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128Mb
MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
700000H-7FFFFFH
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SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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smd transistor bq
Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd transistor bq
A22 SMD CODE
SMD MARKING g3
transistor smd marking BA RE
FY616
A22 SMD MARKING CODE
AG qd SMD
smd code book 6e
smd marking g8
TRS.150
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micron memory sram
Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
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128Mb
MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
micron memory sram
a22 package marking
label infineon
Micron 32MB NOR FLASH
DEVICE MARKING CODE table
dram zip
INFINEON transistor marking
label infineon application note
marking code C5
RCR Resistor
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
pdf/09005aef80be2036
09005aef80be1fbd
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
09005aef80be1fbd
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Untitled
Abstract: No abstract text available
Text: CYWB0124AB West Bridge : Antioch™ USB/Mass Storage Peripheral Controller 1.0 Features • • • • DMA slave support Ultra low power, 1.8V core operation Low power modes Small footprint, 6x6mm VFBGA and less than 4x4mm WLCSP • Selectable clock input frequencies
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CYWB0124AB
CYWB0124AB-FDXI
CYWB0124ABX-FDXI
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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MT28F1284L30
80-Ball
16-bit)
09005aef8115e8b3
MT28F1284L30
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FX109
Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
FX109
FY108
"NOR Flash" intel 28f
MT28F644W18
FY113
FX113
FW117
fw12
FW118
FY114
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns
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MT45W4MW16PFA
MT45W4ML16PFA
MT45W2MW16PFA
MT45W2ML16PFA
48-Ball
09005aef80be1ee8
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns
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MT45W4MW16P
MT45W4MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
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FX110
Abstract: FX108
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero
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16-bit)
MT28F644W30
FX110
FX108
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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09005aef80be1fbd
pdf/09005aef80be2036
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FX119
Abstract: FX117
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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PDF
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16-bit)
09005aef8098d2b5
MT28F644W30
FX119
FX117
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FY618
Abstract: FY617
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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PDF
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
FY618
FY617
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JESD51-9
Abstract: VFBGA package tray AN 7823 JESD51-2 vFBGA* 96 bALL WFBGA lfbga Encapsulation thermal resistance TRAY 15X15 tfBGA PACKAGE thermal resistance tray vfbga
Text: FBGA Fine Pitch Ball Grid Array • Array molded, cost effective, space saving package solution • Available in 1.40mm LFBGA , 1.20mm (TFBGA), and 1.00mm (VFBGA), 0.80mm (WFBGA) and 0.55mm (UFBGA) maximum thickness • Laminate substrate based package which enables 2 and 4 layers of
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SMD MARKING CODE AADV
Abstract: marking SR5 SMD MT28F1284W18 AADV
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation
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PDF
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SMD MARKING CODE AADV
marking SR5 SMD
AADV
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MT48LC8M32LF
Abstract: MT48LC8M32LFB5-8 D9CCM MT48H8M32LFF5-8 MT48LC8M32 mt48h8m32lfb5 D9CCW x32TOC 09005aef80cd8d41
Text: PRELIMINARY‡ 256Mb: x32 MOBILE SDRAM MOBILE SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds. Features Figure 1: Pin Assignment Top View 90-Ball VFBGA
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256Mb:
096-cycle
09005aef80cd8d41
256Mb
MT48LC8M32LF
MT48LC8M32LFB5-8
D9CCM
MT48H8M32LFF5-8
MT48LC8M32
mt48h8m32lfb5
D9CCW
x32TOC
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W2MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size
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MT45W4MW16P
MT45W2MW16P
MT45W4MW16PFA
MT45W2MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
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MT45W4MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
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