MA3J745
Abstract: MA3X704A MA745
Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short
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MA3J745
MA745)
MA3X704A)
MA3J745
MA3X704A
MA745
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fa 5571 CROSS REFERENCE
Abstract: MCEE bc6 csr MPC500 MPC509 csr bc6 fd98s perfo 124 373 csg 6522 GPR5-48
Text: Freescale Semiconductor, Inc. Page Number Paragraph Number 2.5.4.3 Development Port Serial Clock Input DSCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16 2.5.4.4 Instruction Fetch Visibility Signals (VF[0:2]) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-17
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MPC509
fa 5571 CROSS REFERENCE
MCEE
bc6 csr
MPC500
MPC509
csr bc6
fd98s
perfo 124 373
csg 6522
GPR5-48
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PDF
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Untitled
Abstract: No abstract text available
Text: 10mm High Power Infrared LED TCI Part No. TIR850-RAW-5393C Radial Infrared LED Chip Power mW/sr Vf (v) Matrial λD(nm) GaAlAs 850 Len Color Water Clear www.taitroncomponents.com ISO 9001 Certified Typ. Max. 1.5 2.1 at IF= mA 150 Viewing Angle Outline (mm)
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TIR850-RAW-5393C
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode
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SPM1007
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Untitled
Abstract: No abstract text available
Text: 1N5391G thru 1N5399G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and
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1N5391G
1N5399G
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
AEC-Q101
JESD22-B102
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode
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1N5391S
1N5399S
DO-41
MIL-STD-202,
1N5391S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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DO-15
1N5391G
1N5399G
MIL-STD-202,
260/10s
1N539X
1N5393G1N5399G
1N5391G1N5392G
50mVp-p
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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Original
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1N5391G
1N5399G
DO-15
MIL-STD-202,
1N539X
50mVp-p
1N5393G1N5399G
1N5391G1N5392G
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1N5399G
Abstract: No abstract text available
Text: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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Original
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1N5391G
1N5399G
DO-15
MIL-STD-202,
260/10s
1N539xG
1N5399G
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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Original
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1N5391G
1N5399G
DO-15
MIL-STD-202,
260/10s
1N539xG
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391 thru 1N5399 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N5391
1N5399
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
JESD22-B102
D1406009
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391 - 1N5399 Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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Original
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1N5391
1N5399
DO-15
MIL-STD-202,
1N539X
1N5392-1N5399
1N5391
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode
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DO-41
1N5391S
1N5399S
DO-41
MIL-STD-202,
260/10s
1N539XS
1N5392S1N5399S
1N5391S
50mVp-p
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G 1.5 AMPS. Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant
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1N5391G
1N5399G
DO-15
MIL-STD-202,
1N5399G)
1N5393G-1N5399G
1N5391G-1N5392G
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Untitled
Abstract: No abstract text available
Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode
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Original
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1N5391S
1N5399S
DO-41
MIL-STD-202,
1N539XS
1N5392S1N5399S
1N5391S
50mVp-p
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LB 11917
Abstract: enthalpy
Text: STEAM TABLES Properties of Saturated & Superheated Steam Table 1. Saturated Steam: Temperature Table Temp. Fahr. t Abs. Press. Lb per Sq. In. p Specific Volume Sat. Sat. Liquid Evap. Vapor vf vfg vg Sat. Liquid hf Enthalpy Evap. hfg Sat. Vapor hg Sat. Liquid
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1N5391S
Abstract: 1N5399S
Text: 1N5391S - 1N5399S 1.5 AMPS. Silicon Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable
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1N5391S
1N5399S
DO-41
MIL-STD-202,
oC/10
1N5392S-1N5399S
1N5391S
1N5399S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391 - 1N5399 1.5 AMPS. Silicon Rectifiers DO-15 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable
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Original
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1N5391
1N5399
DO-15
MIL-STD-202,
1N5392-1N5399
1N5391
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
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1N5391S
1N5399S
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1406002
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znr varistor
Abstract: DXT031-38-1A RC SUPPRESSOR 220v ac solenoid valve VF1000 vf3160 VF5000 VF5220 solenoid valve 24v vf312
Text: 5 Port Pilot Solenoid Valve Rubber Seal VF1000/3000/5000 SY SV SY SYJ Large flow capacity, SX Yet compact size. VK Low power consumption. VZ 1.8WDC VF Exhausting equipment for pilot valve not required. VFR Common exhaust for main valve and pilot valve is available.
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VF1000/3000/5000
VF5000
VF3000
VF1000
znr varistor
DXT031-38-1A
RC SUPPRESSOR
220v ac solenoid valve
VF1000
vf3160
VF5000
VF5220
solenoid valve 24v
vf312
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1N5391S
Abstract: 1N5399S
Text: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.
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OCR Scan
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1N5391S
1N5399S
DO-41
1N539XS
MIL-STD-202,
260oC/10
1N5399S)
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PDF
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1N5391
Abstract: 1N5399
Text: TAIWAN 1N5391 -1N5399 m . SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers RoHS COMPLIANCE DO-15 .140 3.6 Features_ <• 1.0 (2 5 .4 ) TO M MIN. DIA. H High efficiency, Low VF High current capability High reliability High surge current capability
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OCR Scan
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1N5391
-1N5399
DO-15
MIL-STD-202,
1N539X
1N5399)
1N5399
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PDF
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1N5391G
Abstract: 1N5399G
Text: is TAIWAN SEMICONDUCTOR 1N5391G - 1N5399G 1.5 AMPS. Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE J R . .1 40 3.6 / 104 (5.6) -Y- 444-Y- MIN DIA. Features H t i Glass passivated chip junction. High efficiency, Low VF High current capability High reliability
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OCR Scan
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1N5391G
1N5399G
DO-15
MIL-STD-202,
1N5399G)
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PDF
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triode
Abstract: pj 939 UCH11 SE-450 philips oszillator pj+939+lv
Text: 6 Minwkdt" l u c H 11 IRIODE-HEXODE for use as frequency converter TRIODE-HEXODE pour utilisation comme changeuse de fréquence TEIODE-HEXODE zur Verwendung als Mischrühre Heating: indirect by A.C. or D.C.; series supply 20 V Chauffage: Indirect par C.A. ou C.C.; Vf
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OCR Scan
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UCH11
triode
pj 939
SE-450
philips oszillator
pj+939+lv
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PDF
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