VF 100 PANASONIC Search Results

Contextual Info: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • IF(AV) = 1 A rectification is possible

MA3XD15

Contextual Info: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • IF(AV) = 1 A rectification is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA5SD29XG Silicon epitaxial planar type For super high speed switching circuits • Package  Low forward voltage VF : < 0.42 V (at IF = 100 mA)  Tow isolated elements are contained in one package, optimum for high-density

MA5SD29XG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA5SD29XG Silicon epitaxial planar type For super high speed switching circuits • Package  Low forward voltage VF : < 0.42 V (at IF = 100 mA)  Tow isolated elements are contained in one package, optimum for high-density

MA5SD29XG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA5SD29XG Silicon epitaxial planar type For super high speed switching circuits • Package  Low forward voltage VF : < 0.42 V (at IF = 100 mA)  Tow isolated elements are contained in one package, optimum for high-density

MA151K

Abstract: MA8075-M OH003 A950
Contextual Info: , Hall Elements • Composite Elements Type No. Vr If V (mA) Vf Cd max. typ. (PF) If (V) (mA) AM A999 30/40 30/100 1.0 Package Irr typ. (ns) Vr If 1.0 1.0 1.5 No. (mA) (V) 30 Basic Type No. 10 MA704A MA151K Mini Type (4 pins) D14 ATentative Type No. Plot

CRCW0805F

Abstract: LM3402 CMSH1-40M SLF10145T-150
Contextual Info: 1.0 Design Specifications Inputs Outputs #1 VinMin=10 Vout1=6.8 VinMax=30 Iout1=0.5 2.0 Design Description These circuits are designed to drive a string of 2 InGaN LEDs or 3 AlInGaP LEDs in series Vf total 6.6V at a forward current of 470 mA to 500 mA with a peak-to-peak ripple current of 100

LNJ814R88RA

Contextual Info: Approved Checked Designe^ DEVELOPMENT SPECIFICATION T e n t a t i v e P/N:LN.T814R88RA m VF IR IO Xp AX Topr Tstg - 3 0 ^ + 85 « -40 — + 100 V t i o n C o n d i t i o n I i.- — 1 0 m A Typ. '1.95 > yr I > Forward Voltage Reverse Leakage Current Luminous Intensity *2

a73 zener diode

Abstract: 30w ZENER DIODES d26 zener diode zener a30 zener diode A30 DO-34 ZENER S-Mini ZENER A28 d12112
Contextual Info: Diode i • Silicon Diodes AVC Vr Type No. (V) ■ Silicon Diodes (Band Switch) ¿V f / ¿IT Vf (V) Ifm (mA) Package (m$/C) M A 27/29 6 150 0.56 to 0.64 2 DO-35/34 D 28/26 M A 2 7W /2 9 W 6 100 1.18 to 1.36 4.6 DO-35/34 D 28/26 M A 2 7T /2 9T 6 70 1.76 to 2.04

15W ZENER DIODES

Abstract: bidirectional zener diodes ma27w MA28T PANASONIC MA4000 ma27 MINI 29 MA3062W MA75WA
Contextual Info: Diode • Silicon Diodes AVC Vr (V) Type No. ■ Silicon Diodes (Band Switch) AM f t A l VF (V) Ifm (mA) typ (mV/C) Package MA27/29 6 150 0.56 -0 .6 4 2 DO-35/34 D 28/26 MA27W/29W 6 100 1.18 -1 .3 6 4.6 DO-35/34 D 28/2S MA27T/29T 6 MA27Q/29Q 70 6 50 1.76 -2 .0 4

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.

IFSM

Abstract: MA22D26
Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% below conventional our products reduces power consumption and enhances

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes

AN8091

Abstract: AN8091S D0127 panasonic cf
Contextual Info: Panasonic Voltage Regulators AN 8091, AN 809IS Overvoltage Protective Circuit Incorporated Switching Power Supply • Overview Unit ! mm AN8091 The AN8091 and A N 8091S are equipped with various protection functions such as from overcurrent and over­ voltage, which can raise the reliability of the power sup­

Contextual Info: Panasonic Voltage Regulators A N 8091, AN8091S Overvoltage Protective Circuit Incorporated Switching Power Supply • Overview AN8091 The AN8091 and AN8091S are equipped with various protection functions such as from overcurrent and over­ voltage, which can raise the reliability of the power sup­

Contextual Info: Panasonic Infrared Light Emitting Diodes LN77L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 1 8 mW typ. • Fast response and high-speed modulation capability : fc = 20 MHz (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA4801L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • Fast response and high-speed modulation capability : fc = 20 MHz typ. • Wide directivity : 0 = 22 deg. (typ.) • Transparent epoxy resin package

STG180

Contextual Info: Panasonic Infrared Light Emitting Diodes LN78 GaAIAs Infrared Light Em itting Diode For o ptical control cystem s • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 1 2 MHz I A b solu te M axim um R atings (Ta = 25°C)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Em itting Diode For o ptical control system s • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 1 2 MHz I A b solu te M axim um R atings (Ta = 25°C)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 12 MHz I Absolute Maximum Ratings (Ta = 25°C)

LN57

Abstract: LN58 fl37
Contextual Info: PANASONIC INDL/ELEKÍSEÍIIJ 7EC D | t,T3Efi54 6932852 PANASONIC INDLtELECTRONIC 7 f? h lU C 7 h D - ^ 0 ^ 1 W X □ □ □ ‘iñBL. 72C 0 9 8 3 Ó ñ J~ _ _ D _ _ LN5 7 T-Hi-ll LN57 GaAs -f K /G a A s Infrared Light Emitting Diode

Contextual Info: Panasonic Schottk y Barrier Diodes SBD MA2S707 Silicon epitaxial planer type U n it : m m For UHF mixer I Features ( 0 -2 ) Small forward voltage Vp Large conversion gain GC and optimum for UHF mixer SS-Mini package, enabling down-sizing of the equipment and auto­

AN8092

Abstract: AN8092S
Contextual Info: Panasonic Voltage Regulators AN8092, AN8092S Overvoltage Protection Circuit Incorporated Switching Power Supply • Overview AN8092 Unit ! mm The AN8092 and AN8092S are equipped with various protection functions such as from overcurrent and over­ voltage, which can raise the reliability of the power sup­

jvc capacitor

Contextual Info: Panasonic Voltage Regulators AN8092, AN8092S Overvoltage Protection Circuit Incorporated Switching Power Supply • Overview AN8092 Unit ! mm The AN8092 and AN8092S are equipped with various protection functions such as from overcurrent and over­ voltage, which can raise the reliability of the power sup­