d5030
Abstract: D5030UK 064R
Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D5030UK
175MHz
13GLURQFRUH
D5030UK
175MHz
d5030
064R
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Untitled
Abstract: No abstract text available
Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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Original
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D5030UK
175MHz
D5030UK
175MHz
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bb53R31 0Q3034b bb7 « A P X Product Specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for
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bb53R31
0Q3034b
BUK100-50GS
bbS3T31
0D3D353
bb53131
Q0303S4
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4-07-7016
Abstract: No abstract text available
Text: S'iE » • HÛ55M52 0012330 221 « I N R IRLR120, IRLU120 INTERNATIONAL RECTIFIER IttER E le c t r i c a *d on Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time tr Rise Time . a? C h a r a c t e r i s t i c s <§> T j = 2 5 ° C ( u n l e s s o t h e r w i s e s p e c i f i e d )
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55M52
IRLR120,
IRLU120
Id-250
Vds-50V,
OT-89
4-07-7016
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