Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VDS DISPLAY Search Results

    VDS DISPLAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    COMBOAUDIODISPLAY
    Texas Instruments DRV8662 Piezo Haptic Driver with Integrated Boost Converter Visit Texas Instruments
    TPS65142RTGT
    Texas Instruments LCD Bias Solution For LCD Panels with 6ch WLED Driver 32-WQFN Visit Texas Instruments
    DLPC6401ZFF
    Texas Instruments DLP® Display Controller for High-brightness Portable Displays 419-BGA 0 to 55 Visit Texas Instruments Buy
    TPS65632AGRTER
    Texas Instruments Triple Outputs AMOLED Display Power Supply 16-WQFN Visit Texas Instruments
    DLPC3436CZVB
    Texas Instruments DLP® Display Controller for DLP230NP (0.23 1080p) DMD 176-NFBGA Visit Texas Instruments Buy

    VDS DISPLAY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    97001A

    Abstract: AN1001 AN-994
    Contextual Info: PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits


    Original
    7001A IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB O-262 97001A AN1001 AN-994 PDF

    AN1001

    Abstract: AN-994 TO-262 Package
    Contextual Info: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits


    Original
    IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF AN1001) O-220AB O-262 IRFS52N15DPbF AN-994. AN1001 AN-994 TO-262 Package PDF

    TO-262 Package

    Contextual Info: PD - 97001 PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits


    Original
    IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB IRFB38N20DPbF IRFS38N20DPbF O-262 AN-994. TO-262 Package PDF

    AN1001

    Abstract: AN-994 TP720
    Contextual Info: PD - 97001B PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits


    Original
    97001B IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB O-262 AN1001 AN-994 TP720 PDF

    AN1001

    Abstract: AN-994 IRFB52N15
    Contextual Info: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits


    Original
    IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF AN1001) O-220AB O-262 IRFS52N15DPbF AN-994. AN1001 AN-994 IRFB52N15 PDF

    Contextual Info: Si4808DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A


    Original
    Si4808DY Si4808DY-T1 08-Apr-05 PDF

    Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A


    Original
    Si4812DY 08-Apr-05 PDF

    Contextual Info: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A


    Original
    Si4832DY 08-Apr-05 PDF

    Contextual Info: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A


    Original
    Si4832DY Si4832DY-T1 08-Apr-05 PDF

    Contextual Info: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A


    Original
    Si4830DY Si4830DY-T1 08-Apr-05 PDF

    Contextual Info: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A


    Original
    Si4810DY Si4810DY-T1 08-Apr-05 PDF

    Contextual Info: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A


    Original
    Si4834DY Si4834DY-T1 08-Apr-05 PDF

    Si4852DY

    Abstract: Si4852DY-T1
    Contextual Info: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage


    Original
    Si4852DY Si4852DY-T1 08-Apr-05 PDF

    Contextual Info: Si6404DQ New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 11 APPLICATIONS 30 0.010 @ VGS = 4.5 V 10 0.014 @ VGS = 2.5 V 8.8 D Battery Switch


    Original
    Si6404DQ 08-Apr-05 PDF

    Am95C60 b

    Contextual Info: Am8177 Video Data Serializer FINAL DISTINCTIVE CHARACTERISTICS 200-MHz parallel-to-serial shift register Cascadable in increments of 16 bits • 24-pin slim-lme DIP GENERAL DESCRIPTION The Am8177 Video Data Serializer VDS is a 16-bit parallel-to-serial shift register for use in bit-mapped display


    OCR Scan
    Am8177 200-MHz 24-pin Am8177 16-bit Am8151A Am8172 Am95C60 Am8l77 Am95C60 b PDF

    Si1021R

    Abstract: SC-75A Si1021R-T1-E3 S-81543-Rev
    Contextual Info: Si1021R Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G RoHS COMPLIANT • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,


    Original
    Si1021R SC-75A OT-416) 18-Jul-08 SC-75A Si1021R-T1-E3 S-81543-Rev PDF

    AM8177

    Abstract: DD15 Am8151
    Contextual Info: Am 8177 Video Data Serializer FINAL DISTINCTIVE CHARACTERISTICS 200-MHz parallel-to-serial shift register Cascadable in increments of 16 bits • 24-pin slirn-line DIP GENERAL DESCRIPTION The Am 8177 Video Data Serializer VDS is a 16-bit parallel-to-serial shift register for use in bit-mapped display


    OCR Scan
    Am8177 200-MHz 24-pin Am8177 16-bit Am8151A Am8172 Am95C60 WF010561 DD15 Am8151 PDF

    SIHF18N50D

    Contextual Info: SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHF18N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SIHF8N50D

    Contextual Info: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHF8N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original
    SiHD3N50DA O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHD3N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    IRF740B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF