uPD70F3433
Abstract: DAFCAN 0x00001428 uPD70F34 nec. 5.5 473 0x000004A3 upd70f3178 0x00000BC9
Text: User’s Manual V850E/CG4TM CarGate-3G-384F 32-bit RISC Microcontroller Hardware µPD70F3433 A Document No. U17411EE1V1UM00 Date Published April 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
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V850E/CG4TM
CarGate-3G-384F
32-bit
PD70F3433
U17411EE1V1UM00
uPD70F3433
DAFCAN
0x00001428
uPD70F34
nec. 5.5 473
0x000004A3
upd70f3178
0x00000BC9
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UPD76F
Abstract: UPD76F0018GJ uPD76F0018 U14879EE1V0UM00 LMS-R5 upd76F00 UPD76F0 nec japan 7812 upd76f0017 sdc 339
Text: Preliminary User’s Manual V850E/VANSTORM TM 32-/16-bit Single-Chip Microcontroller with CAN and VAN Interfaces Hardware µPD76F0018 Document No. U14879EE1V0UM00 Date Published August 2001 NEC Corporation 2001 Printed in Germany NOTES FOR CMOS DEVICES
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V850E/VANSTORM
32-/16-bit
PD76F0018
U14879EE1V0UM00
build8-6130
UPD76F
UPD76F0018GJ
uPD76F0018
U14879EE1V0UM00
LMS-R5
upd76F00
UPD76F0
nec japan 7812
upd76f0017
sdc 339
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U17412EE1V0DS00
Abstract: LQFP100 uPD70F3433 M/U17411EE1V0UM00
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d2/9044
U17412EE1V0DS00
LQFP100
uPD70F3433
M/U17411EE1V0UM00
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1K x 8 static ram dip22
Abstract: EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312
Text: Preliminary User’s Manual TM V850E/CA2 JUPITER 32-/16-bit Romless Microcontroller Hardware µPD703128, µPD703129 Document No. U15839EE1V0UM00 Date Published August 2003 NEC Corporation 2003 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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V850E/CA2
32-/16-bit
PD703128,
PD703129
U15839EE1V0UM00
electricity6130
1K x 8 static ram dip22
EASE-AN-4050
uPD703128
ca2 dn 1319
uPD703129
transistors F6 DD52
transistor dd52
F12a
U15839EE1V0UM00
upD70312
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nec 7800
Abstract: uPD70F3178 ic p35 BVDD50 TIP11 CarGate SS53 LQFP100 afcan V850E TIP20
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD70F3178 A V850E/CG3TM CarGate+ 32-Bit Flash Microcontroller DESCRIPTION The V850E/CG3 ("CarGate+") Flash microcontroller, is a member of NEC's V850 32-bit RISC family, which match the performance gains attainable with RISC-based controllers to the needs of embedded control
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PD70F3178
V850E/CG3TM
32-Bit
V850E/CG3
16-bit
gen6-9022/9044
nec 7800
uPD70F3178
ic p35
BVDD50
TIP11
CarGate
SS53
LQFP100
afcan V850E
TIP20
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ANA 618 20010
Abstract: FFFFF486H MB080 20100 ct Cargate Power Convertibles pr 205 voltage regulator ana 618 uPD70F3178 V850E cargate m v850
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d2-2886-9022/9044
ANA 618 20010
FFFFF486H
MB080
20100 ct
Cargate
Power Convertibles pr 205
voltage regulator ana 618
uPD70F3178
V850E
cargate m v850
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cargate m v850 6 can 2 lin
Abstract: MB080 BV EI 382 1186 uPD70F3433 FFFFF482 aFCAN 0x00000428 U17411EE1V1UM00 0x00000564 0x00001428
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d2-2886-9022/9044
cargate m v850 6 can 2 lin
MB080
BV EI 382 1186
uPD70F3433
FFFFF482
aFCAN
0x00000428
U17411EE1V1UM00
0x00000564
0x00001428
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uPD70F3178
Abstract: uart c code v850 FFFFF340
Text: User’s Manual V850E/CG3TM CarGate+ 32-bit RISC Microcontroller Hardware µPD70F3178 Document No. U16881EE2V1UM00 Date Published April 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
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V850E/CG3TM
32-bit
PD70F3178
U16881EE2V1UM00
uPD70F3178
uart c code v850
FFFFF340
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LQFP100
Abstract: uPD70F3178 BVSS50 TIP11
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d6-9022/9044
LQFP100
uPD70F3178
BVSS50
TIP11
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uPD70F3123
Abstract: UPD76F BT600 upd70f3123gj uPD70F3123GJ-UEN ETB29 70F3123 PIN DIAGRAM OF 7 segment display LT 542 "lcd 2 8" KHN 10
Text: Preliminary User’s Manual V850E/CA1 TM ATOMIC 32-/16-bit Single-Chip Microcontroller Hardware µPD703123, µPD70F3123 Document No. U14913EE1V0UM00 Date Published October 2001 NEC Corporation 2001 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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V850E/CA1
32-/16-bit
PD703123,
PD70F3123
U14913EE1V0UM00
ele88-6130
uPD70F3123
UPD76F
BT600
upd70f3123gj
uPD70F3123GJ-UEN
ETB29
70F3123
PIN DIAGRAM OF 7 segment display LT 542
"lcd 2 8"
KHN 10
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tip21
Abstract: uPD70F3433 LQFP100 afcan V850E ci pal 007 FLASHPRO4 g0511 uPD70F3433A BVDD50 CarGate-3G-384F
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD70F3433 A V850E/CG4TM CarGate-3G-384F 32-Bit Flash Microcontroller DESCRIPTION The V850E/CG4 (“CarGate-3G-384F”) Flash microcontroller, is a member of NEC's V850 32-bit RISC family, which match the performance gains attainable with RISC-based controllers to the needs of embedded
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PD70F3433
V850E/CG4TM
CarGate-3G-384F
32-Bit
V850E/CG4
CarGate-3G-384F"
16-bit
tip21
uPD70F3433
LQFP100
afcan V850E
ci pal 007
FLASHPRO4
g0511
uPD70F3433A
BVDD50
CarGate-3G-384F
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Untitled
Abstract: No abstract text available
Text: product P -P W A M M F I r LMAlNINtL F M W A M f 'f M iT M T I tN M A N L tM tN -100V. -12A, o.3n SDF9130 SDF9130 JAA JAB M H C M U b FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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-100V.
IF--12A.
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d3s diode
Abstract: No abstract text available
Text: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK1906
apacit63
51193TH
X-8377
Na4225-l/3
d3s diode
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sanyo wx series
Abstract: sanyo wx 2SJ277
Text: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.
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2SJ277
2SJ277-applied
10/ws,
c-10V
sanyo wx series
sanyo wx
2SJ277
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2092A
Abstract: No abstract text available
Text: 2SK1475 2092A 2083A LD L o w D rive S eries VDSs = 1 0 0 V N Channel P o w er M O S F E T F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings atT a = 25°C Drain to Source Voltage V dss Gate to Source Voltage
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2SK1475
83093TH
2092A
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE
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fl3bflb02
00G353b
5DF140
SDF140
MIL-S-19500
IF-25A.
IF-25A
300nS.
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IRFPF50
Abstract: 67a regulator
Text: P D -9 .5 4 2 B International IRFPF50 [^ R e c tifie r HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 900V ^DS on = 1
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IRFPF50
O-247
T0-220
O-218
creepage01
50Kii
IT13tÃ
IRFPF50
67a regulator
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19500 TRANSISTOR 50A
Abstract: No abstract text available
Text: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q
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M3DSE71
DD457S7
2N7299D,
2N7299R
FRK160
2N7299H
i00KRAD
300KRAD
1000KRAD
3000KRAD
19500 TRANSISTOR 50A
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Untitled
Abstract: No abstract text available
Text: PRODUCT P-CHANNEL ENHANCEMENT MOS FET 100V.-12A, 0.3Q SDF9130 SDF9130 JAA JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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SDF9130
MIL-S-19500
IF--12A,
03bfibD2
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3776a
Abstract: 2092A 2SK1475 7wu7
Text: 2SK1475 2092A 2083A LD L o w D rive S eries VDs s = 1 0 0 V N Channel Power MOSFET 3776A F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage V dss Gate to Source Voltage
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2SK1475
3776a
2092A
2SK1475
7wu7
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BST74A
Abstract: No abstract text available
Text: BST74A J _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer
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BST74A
O-92s.
rnA/10
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220n5
Abstract: 2SK1273 2SK1293 hz nec 2SK1271 2SK1272 2SK1274 2SK1276 2SK1277 2SK1278
Text: - 94 - ft f =E m € tt ffl € ÎÊ m £ X it % K V m * (V) ft * 3 fe P d /P c h (A) f*t (W) Ig s s (max) (A) Vg s ÍV) (min) (A) % Î# m (max) V d s (A) (V) I* (Ta=25cC ) (min) (max) V d s (V) (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK1271 NEC SW, HV
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2SK1271
2SK1272
2SK1273
2SK1274
2SX1275
185ns.
350nstyp
2SK1292
220n5
2SK1293
hz nec
2SK1276
2SK1277
2SK1278
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