Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VCEO 800V PNP Search Results

    VCEO 800V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VCEO 800V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPN VCEO 800V

    Abstract: pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn
    Text: Search Results Part number search for devices beginning "2N4939" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4939 PNP TO79 40V 0.05A 50 - 10/1m 300MHz


    Original     		2N4939" 2N4939 2N4939DCSM 10/1m 300MHz 2N5001" 2N5001 2N5001S NPN VCEO 800V pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn PDF

    2SA1831

    Abstract: No abstract text available
    Text: Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–800V . · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).


    Original     		EN3686A 2SA1831 2010B 2SA1831] O-220AB SC-46 2SA1831 PDF

    800V PNP

    Abstract: BUL52B pnp 400v 2A
    Text: SavantIC Semiconductor Product Specification BUL52B Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN DESCRIPTION


    Original     		BUL52B O-220C 800V PNP BUL52B pnp 400v 2A PDF

    BUL52B

    Abstract: pnp 400v 2A pnp 400V 3A
    Text: Inchange Semiconductor Product Specification BUL52B Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN


    Original     		BUL52B O-220C BUL52B pnp 400v 2A pnp 400V 3A PDF

    2SA1831

    Abstract: ITR04846 ITR04847 ITR04848 ITR04849 ITR04850 PNP transistor 800v 0,1
    Text: Ordering number:ENN3686A PNP Triple Diffused Planar Silicon Transistor 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–800V . · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).


    Original     		ENN3686A 2SA1831 2010C 2SA1831] O220AB 2SA1831 ITR04846 ITR04847 ITR04848 ITR04849 ITR04850 PNP transistor 800v 0,1 PDF

    pnp transistor 800v

    Abstract: 2SA1831 ITR04846 ITR04847 ITR04848 ITR04849 ITR04850 5201m
    Text: Ordering number:ENN3686A PNP Triple Diffused Planar Silicon Transistor 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–800V . · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).


    Original     		ENN3686A 2SA1831 2010C 2SA1831] O220AB pnp transistor 800v 2SA1831 ITR04846 ITR04847 ITR04848 ITR04849 ITR04850 5201m PDF

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


    Original     		BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIO 4468 Why Diodes - Bipolar2 final _- 09/10/2014 01:12 Page 1 WHY DIODES – BIPOLAR2 Why DIODES? Bipolar Transistors World Class Performance Broad Portfolio to Cover Application Needs Bipolar Advantages Technology Full turn-on with low VBE < 1V allows switching


    Original     		DFN0606 De00V O251/2; OT223 PDF

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original     		EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140 PDF

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams PDF

    pnp transistor 800v

    Abstract: 2SA1831 PNP transistor 800v 0,1
    Text: j Ordering number: EN3 6 8 6 A _ 2 S A 1 8 31 PNP Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching w 1 II 1—0 IO 1 II >Q Features • High breakdown voltage VcEOmin = —800V . • Small c0b (c0b typ = 1.6pF).


    OCR Scan     		EN3686A 2SA1831 -800V x3686-3/3 pnp transistor 800v PNP transistor 800v 0,1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High, speed switching • High collector-base voltage VCbo • Low collector-emitter saturation voltage (Vce rsa»)


    OCR Scan     		2SC3796, 2SC3796A 2SC3796 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3970, 2SC3970A 2SC3970, 2SC3970A Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching ■ Features • High speed sw itching • High collector-base voltage Vcbo • Wide area of safety operation (ASO)


    OCR Scan     		2SC3970, 2SC3970A 2SC3970 2SC3970 PDF

    2SC3798

    Abstract: pnp 900v 2SC3798A
    Text: Power Transistors 2SC3798, 2SC3798A 2SC3798, 2SC3798A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it I mm • Features 5 .2max. 15.5m ax. 6.9min. • High speed switching 3.2 • High collector-base voltage Vcbo


    OCR Scan     		2SC3798, 2SC3798A 2SC3798 pnp 900v 2SC3798A PDF

    Untitled

    Abstract: No abstract text available
    Text: EPITAXIAL BASE - lCM UP TO 30A; VCEO UP TO 100V MAIN FEATURES • NPN and PNP types perfect complementary pairs ■ Medium switching speed ■ Medium fy (2 to 20 MHz) ■ High ruggedness THERMAL OXIDE P VAPOX Al GIAS! INTERNAL SCHEMATIC DIAGRAMS Epitaxial Base Technology is a general purpose low


    OCR Scan     		PDF

    800V PNP

    Abstract: 2SC3970 2SC3970A
    Text: Power Transistors 2SC3970, 2SC3970A 2SC3970, 2SC3970A Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Breakdown Voltage, High Speed Switching • F eatures , • High speed switching !2 9 max. • High collecto r-b a se v o ltage V cbo


    OCR Scan     		2SC3970, 2SC3970A 2SC3970 800V PNP 2SC3970A PDF

    2SC3796

    Abstract: 2SC3796A SC-65
    Text: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features O +1 . • High, speed switching • • High collector-base voltage VCBo • Low collector-emitter saturation voltage (Vce tsa«)


    OCR Scan     		2SC3796, 2SC3796A 2SC3796 2SC3796A SC-65 PDF

    2SC3794

    Abstract: 2SC3794A vceo 800V PNP
    Text: Power T ransistors 2SC3794, 2SC3794A 2SC3794, 2SC3794A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • . 5.7max. High speed switching High collector-base voltage V c b o


    OCR Scan     		2SC3794, 2SC3794A 2SC3794 bR328S2 2SC3794A vceo 800V PNP PDF

    800V PNP

    Abstract: pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V
    Text: N AMER PHILIPS/DISCRETE 44 2SE T> m ^>[=53=131 ÛQlbES2 T • T-33-Í?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating TYPE NO. PACKAGE OUTLINE ,C(DC)0) VCES BU505 TO-220AB 2.5A BU506 TO-220AB 3A BU506D TO-220AB 3A SOT-93A 3A BU706


    OCR Scan     		T-33-Ã BU505 O-220AB BU506 BU506D BU706 OT-93A BU706D 800V PNP pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V PDF

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786 PDF

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY PDF

    C4106 transistor

    Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
    Text: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower


    OCR Scan     		T0-220MF T0-220 2SB1266 2SD1902 2SB1267 2SD1903 2SB1268 2SD1904 2SB1269 C4106 transistor c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191 PDF