VCE 850 Search Results

Contextual Info: NSS40400CF8T1G Product Preview 40 V, 7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These

A316J

Abstract: HCPL-316J A 316J 316j hcpl 316j dc motor control D44VH10 IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE IR igbt gate driver ic E55361
Contextual Info: HCPL-316J 2.5 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Data Sheet Description Features Avago’s 2.5 Amp Gate Drive Optocoupler with Integrated Desaturation (VCE) Detection and Fault Status Feedback makes IGBT VCE fault protection

NSS20300MR6T1G

Contextual Info: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These

NSS20201MR6T1G

Contextual Info: NSS20201MR6T1G Product Preview 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These

NSS20601CF8T1G

Abstract: NSS20601CF8
Contextual Info: NSS20601CF8T1G 20 V, 8.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS20601CF8

Contextual Info: NSS20601CF8T1G 20 V, 8.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS35200CF8T1G 35 V, 7 A, VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS12601CF8T1G

Abstract: ChipFET NSS12601CF8
Contextual Info: NSS12601CF8T1G 12 V, 8.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS35200CF8T1G 35 V, 7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

318F

Abstract: AN569 NSS30071MR6T1G
Contextual Info: NSS30071MR6T1G 30 V, 0.7 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

WDFN3

Abstract: D33X
Contextual Info: NSS20500UW3 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

VS4 SOT23

Abstract: marking VS4 sot-23 NSS30100LT1G
Contextual Info: NSS30100LT1G 30 V, 2 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS12601CF8

Contextual Info: NSS12601CF8T1G 12 V, 8.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS20201MR6T1G

Contextual Info: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS30071MR6T1G 30 V, 0.7 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

BF167

Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot

NSS12600CF8T1G

Contextual Info: NSS12600CF8T1G 12 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS20500UW3T2G

Contextual Info: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS12200WT1G

Abstract: NSS12200WT
Contextual Info: NSS12200WT1G 12 V, 3 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

318F

Abstract: AN569 NSS30070MR6T1G NSS30070MR6
Contextual Info: NSS30070MR6T1G 30 V, 0.7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS30201MR6T1G

Contextual Info: NSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS20500UW3T2G

Contextual Info: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS40500UW3T2G

Contextual Info: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications