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    VCE 500V NPN TRANSISTOR Search Results

    VCE 500V NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    VCE 500V NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW

    20MHZ

    Abstract: FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23

    Untitled

    Abstract: No abstract text available
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW

    vbe 10v, vce 500v NPN Transistor

    Abstract: L 10M marking 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23 NPN VCEO 500V sot23
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW vbe 10v, vce 500v NPN Transistor L 10M marking 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23 NPN VCEO 500V sot23

    BUV25

    Abstract: transistor Vbe 1 vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor 8A low vce 16a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV25 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V (Min.) APPLICATIONS


    Original     		PDF BUV25 10MHz BUV25 transistor Vbe 1 vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor 8A low vce 16a

    ATV-18

    Abstract: 2SC4140
    Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 18(Pulse36) A hFE IC=25mA 400min VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A


    Original     		PDF 2SC4140 MT-100 100max Pulse36) 400min 10typ 165typ ATV-18 2SC4140

    2SC4297

    Abstract: No abstract text available
    Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A


    Original     		PDF 2SC4297 100max 400min Pulse24) 10typ 105typ 10itter FM100 2SC4297

    2SC4140

    Abstract: ATV-18 vbe 10v, vce 500v NPN Transistor 110MP
    Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A


    Original     		PDF 2SC4140 MT-100 100max 400min Pulse36) 10typ 165typ 2SC4140 ATV-18 vbe 10v, vce 500v NPN Transistor 110MP

    2SC4297

    Abstract: No abstract text available
    Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A


    Original     		PDF 2SC4297 100max 400min Pulse24) 10typ 105typ FM100 2SC4297

    2SC4138

    Abstract: No abstract text available
    Text: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A


    Original     		PDF 2SC4138 MT-100 100max 400min Pulse20) 10typ 85typ 2SC4138

    TS13001

    Abstract: vce 500v NPN Transistor TS13001CT
    Text: TS13001 High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE SAT , = 0.5V @ Ic / Ib = 50mA / 10mA Pin assignment: 1. Emitter 2. Collector 3. Base Features — Ordering Information High voltage. Part No. — High speed switching Structure — Packing


    Original     		PDF TS13001 TS13001CT TS13001 vce 500v NPN Transistor TS13001CT

    Untitled

    Abstract: No abstract text available
    Text: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram  High Voltage  High Speed Switching Structure 


    Original     		PDF TSC10 TSC10CT

    1.5A NPN power transistor TO-92

    Abstract: vbe 10v, vce 500v NPN Transistor
    Text: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure


    Original     		PDF TSC10 TSC10CT 1.5A NPN power transistor TO-92 vbe 10v, vce 500v NPN Transistor

    2SC5130

    Abstract: FM20
    Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2


    Original     		PDF 2SC5130 100max 10max 400min Pulse10) 20typ 30typ O220F) 2SC5130 FM20

    Untitled

    Abstract: No abstract text available
    Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30


    Original     		PDF 2SC4073 Pulse10) O220F) 100max 400min 10typ 30typ

    2SC4073

    Abstract: FM20 SE-05
    Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2


    Original     		PDF 2SC4073 Pulse10) 100max 400min 10typ 30typ O220F) 2SC4073 FM20 SE-05

    NPN Transistor 500V to3

    Abstract: NPN Transistor 10A 400V to3
    Text: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BUX45X O-204AA) NPN Transistor 500V to3 NPN Transistor 10A 400V to3

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BUX45X O-204AA)

    vbe 10v, vce 500v NPN Transistor

    Abstract: vce 500v NPN Transistor transistor bu941 ignition coil bu941 ignition coil npn power darlington High voltage ignition coil driver Ignition Driver IC bu941 npn DARLINGTON 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941 DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL


    Original     		PDF BU941 250mA 300mA vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor transistor bu941 ignition coil bu941 ignition coil npn power darlington High voltage ignition coil driver Ignition Driver IC bu941 npn DARLINGTON 10A

    vbe 10v, vce 500v NPN Transistor

    Abstract: High voltage ignition coil driver vce 500v NPN Transistor BU941T ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN DARLINGTON 10A 500V ignition coil driver
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941T DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL


    Original     		PDF BU941T 250mA 300mA vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver vce 500v NPN Transistor BU941T ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN DARLINGTON 10A 500V ignition coil driver

    vce 500v NPN Transistor

    Abstract: vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver ignition coil bu941 bu941 ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN Transistor VCEO 450V
    Text: Product Specification www.jmnic.com BU941 Silicon NPN Power Transistor DESCRIPTION ・High Voltage ・DARLINGTON APPLICATIONS ・High ruggedness electronic ignitions ・High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER


    Original     		PDF BU941 100mA 250mA 300mA vce 500v NPN Transistor vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver ignition coil bu941 bu941 ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN Transistor VCEO 450V

    vce 500v NPN Transistor

    Abstract: NPN Transistor 1A 400V vbe 10v, vce 500v NPN Transistor HP50 VCE-500V 300V transistor npn 2a
    Text: NPN S I L I C O N TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP50 █ APPLICATIONS High Voltage And switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… －65~150℃ T j ——Junction Temperature……………………………… 150℃


    Original     		PDF O-220 vce 500v NPN Transistor NPN Transistor 1A 400V vbe 10v, vce 500v NPN Transistor HP50 VCE-500V 300V transistor npn 2a

    transistor bu931

    Abstract: bu931 equivalent NPN DARLINGTON 10A 500V BU931 vbe 10v, vce 500v NPN Transistor NPN Transistor VCEO 450V ignition coil npn power darlington Darlington NPN Silicon Diode vce 500v NPN Transistor transistor npn 500v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931 DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL


    Original     		PDF BU931 100mA 250mA transistor bu931 bu931 equivalent NPN DARLINGTON 10A 500V BU931 vbe 10v, vce 500v NPN Transistor NPN Transistor VCEO 450V ignition coil npn power darlington Darlington NPN Silicon Diode vce 500v NPN Transistor transistor npn 500v

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


    OCR Scan     		PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955