VCE 1V Search Results

2SC4131

Abstract: transistor 2sc4131 VEBO-15V
Contextual Info: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) I-PACK 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER l-PACK • hFE= 1 0 0 -3 2 0 VCE= -2V, lc = -0.5V • hFE= 70(Min) (VCE= -2V, lc = -4A) • Low Saturation Voltage: VcE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating

KSA1242

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

KSA1242

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

STC918E

Abstract: kst40 marking code GNF
Contextual Info: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

2SB1412

Abstract: 2SD2118
Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type

Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A

Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A

kst tuner

Abstract: marking code GNF STC918K kst40
Contextual Info: STC918K Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

2SB1386

Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500
Contextual Info: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.

2SC4064

Abstract: 2SA1567 FM20
Contextual Info: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 IC 12 A hFE VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz

STC918SF

Abstract: kst tuner kst21
Contextual Info: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

13001 TRANSISTOR 126 package

Abstract: STC917UF s-parameter RF POWER TRANSISTOR NPN
Contextual Info: STC917UF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=8.0 GHz Typ. @VCE=6V, IC=7mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

Contextual Info: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

13001 TRANSISTOR 126 package

Abstract: STC918U marking code GNF kst30
Contextual Info: STC918U Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

Contextual Info: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type

ic SE 135

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

2SA1568

Abstract: 2SC4065 FM20
Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 IEBO V V(BR)CEO ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A