VC-12 SWITCH FABRIC Search Results

Contextual Info: <p Preliminary Datasheet FUJITSU S e p te m b e r 1996 V ersion 0.8 MB86681 ATM Switch Element SRE-L FM L/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such

EPD controller

Abstract: diode marking code HP2 MB86681 PA10 PA12 PA15 PA16 PA18 SQFP208 LZ 173 relay
Contextual Info: Datasheet December 1997 Version 1.1 MB86681 ATM Switch Element SRE-L FML/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7S66F/FU Bilateral Switch The TC7S66 is a high speed C2MOS Bilateral Switch fabricated with sili­ con gate C2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C2MOS low power dissipation.

Contextual Info: GaAs Broadband DPDT Diversity Switch Features This part delivers isolation greater than 33 dB and insertion loss less than 1.2 dB across the band. Designed for high power, this DPDT switch maintains high linearity up to 6 GHz. The MASWSS0094 is fabricated using a 0.5 micron

capacitor 30 pf

Contextual Info: GaAs Broadband DPDT Diversity Switch Features This part delivers isolation greater than 33 dB and insertion loss less than 1.2 dB across the band. Designed for high power, this DPDT switch maintains high linearity up to 6 GHz. The MASWSS0094 is fabricated using a 0.5 micron

Antenna Diversity insertion loss

Contextual Info: GaAs Broadband DPDT Diversity Switch Features This part delivers isolation greater than 33 dB and insertion loss less than 1.2 dB across the band. Designed for high power, this DPDT switch maintains high linearity up to 6 GHz. The MASWSS0094 is fabricated using a 0.5 micron

CRC-32

Abstract: MPC750 RFC2684
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. AAL-5 Fabric Port SAR to Gigabit Ethernet Switch Application Guide C-WARE SOFTWARE TOOLSET, VERSION 2.4 CSTAA5F2G-UG/D Rev 04 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.

Contextual Info: Features MASWSS0039 The MASWSS0039 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Absolute Maximum Ratings 1 Parameter Absolute Maximum Max Input Power 3V Control +32 dBm

Contextual Info: TOSHIBA TC74HC4316AP/AF Preliminary Quad Bilateral Switch The TC74HC4316A is a high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

OC 39

Contextual Info: The MASWSS0040 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability. Ordering Information Part Number MASWSS0040TR Package 7 inch, 1000 piece reel 1 MASWSS0040TR-3000 13 inch, 3000 piece reel

MASWSS0020

Abstract: MASWSS0020SMB MASWSS0020TR
Contextual Info: GaAs SP4T 2.5V High Power Switch DC - 3 GHz Preliminary Features GND V4 PIN 1 RF4 V1 RF1 Description 39 pF GND 39 pF The MASWSS0020 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.

DSLAM configuration AWS

Abstract: rx bc nbk TSC 13003 pcr 465 ATML 18751 circuit BKC International mpc82 bsdl nd1 marking code acm 33221
Contextual Info: MC92520 ATM Cell Processor User’s Manual MC92520UM/D Rev. 0, 12/2000 DigitalDNA and Mfax are trademarks of Motorola, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola microprocessors. There are no express or implied copyright licenses granted hereunder to design or fabricate Motorola integrated circuits or integrated

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W 66F/FU Dual Bilateral Switch The TC7W66 is a high speed C2MOS Dual Bilateral Switch fabricated with silicon gate C2MOS technology. It consists of four independent high speed switches capable of con­ trolling either digital or analog signals while maintaining the C2MOS low

pen drive amplifier circuit diagrams

Abstract: optical sensor switch pir sensor light dark sensor 4908A SLR-932A LV9005M MFP24S OTV92194TH PULSE MODE CURRENT SOURCE IC transistor npn for 12 v
Contextual Info: Ordering number : EN 4908A BiCMOS LSI LV9005M Optical Sensor Switch IC Overview The LV9005M is an optical sensor switch IC that is fabricated in a medium breakdown voltage BiCMOS process. The LV9005M circuit structure includes a highgain optical sensor amplifier, a comparator, an oscillator

Contextual Info: TOSHIBA LOGIC/MEMORY IME D I ^ 7 5 4 0 TC74HC4066P/F- 0010555 T | '-SI-11 TC74HC4066P/F QUAD BILATERAL SWITCH The TC74HC4066 is a high speed CMOS QUAD BILATERAL SWITCH fabricated w i t h silicon g a t e C^MOS technology. It consists of four independent high speed switches capable of controlling either

resonant full bridge schematic dsp

Contextual Info: UC2875ĆEP PHASE SHIFT RESONANT CONTROLLER ą ą SGLS233 − FEBRUARY 2004 D Controlled Baseline D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −25°C to 110°C Enhanced Diminishing Manufacturing

resonant full bridge schematic dsp

Contextual Info: UC2875ĆEP PHASE SHIFT RESONANT CONTROLLER ą ą SGLS233A − FEBRUARY 2004 − REVISED DECEMBER 2008 D Controlled Baseline D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −25°C to 110°C

self resonant driver

Abstract: UC2875 UC2875SDWREP RESONANT CONTROLLER resonant full bridge schematic dsp
Contextual Info: UC2875ĆEP PHASE SHIFT RESONANT CONTROLLER ą ą SGLS233 − FEBRUARY 2004 D Controlled Baseline D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −25°C to 110°C Enhanced Diminishing Manufacturing

Contextual Info: TOSHIBA TENTATIVE TC7W66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W66F, TC7W66FU UNDER DEVELOPMENT DUAL BILATERAL SWITCH The TC7W66 is a high speed CMOS DUAL BILATERAL SWITCH fabricated with silicon gate CMOS technology. It consists of four independent high speed switches

Contextual Info: 19-0180; Rev 0; 9/93 V M ^ X IV M Precision, Quad, SPST Analog S w itches The MAX361/MAX362 are fabricated with Maxim’s new improved 44V silicon-gate process. Design improve­ m en ts g u a ra n te e e x tre m e ly low c h a rg e injection 10pC , low power consumption (35nW), and electro­

Contextual Info: S EM IC O N D U C T O R KIC7W66FK TECHNI CAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT D UAL B ILA TER A L SW ITCH The K IC 7W 66FK is a high speed C 2M O S D U A L BILA TER A L SW ITC H fabricated w ith silicon gate C 2M OS technology. It consists o f four independent high speed sw itches capable o f

Contextual Info: TOSHIBA TC7S66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7S66F, TC7S66FU BILATERAL SWITCH The TC7S66 is a high Speed C2MOS BILATERAL SWITCH fabricated with silicon gate C^MOS technology. It consists of a high speed switch capable of controlling

Contextual Info: TO SHIBA TC7S66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7S66F, TC7S66FU BILATERAL SWITCH The TC7S66 is a high Speed C2MOS BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of a high speed switch capable of controlling

Contextual Info: TOSHIBA TC7W53F/FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W53F, TC7W53FU, TC7W53FK 2-CHANNEL MULTIPLEXER / DEMULTIPLEXER The TC7W53 is a high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate CMOS technology.