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    VBE 10V, VCE 500V NPN TRANSISTOR Search Results

    VBE 10V, VCE 500V NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    VBE 10V, VCE 500V NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE394

    Abstract: No abstract text available
    Text: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


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    NTE394 NTE394 100mA, PDF

    NTE198

    Abstract: No abstract text available
    Text: NTE198 Silicon NPN Transistor High Voltage Power Transistor Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode


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    NTE198 NTE198 PDF

    TIP47

    Abstract: npn transistors 400V 1A tip50 TIP49 TIP48 TIP47.48 C143EF TIP47..48 tip48 equivalent TIP48 NPN
    Text: SavantIC Semiconductor Product Specification TIP47/48/49/50 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High sustaining voltage : VCEO sus = 250~400V ·1A rated collector current APPLICATIONS ·High voltage and switching applications


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    TIP47/48/49/50 O-220C TIP47 TIP48 TIP49 TIP50 TIP47 npn transistors 400V 1A tip50 TIP49 TIP48 TIP47.48 C143EF TIP47..48 tip48 equivalent TIP48 NPN PDF

    NPN Transistor 10A 24V

    Abstract: No abstract text available
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


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    BU941 O-220 QW-R203-025 NPN Transistor 10A 24V PDF

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER


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    BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941 PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: vce 500v NPN Transistor transistor bu941 ignition coil bu941 ignition coil npn power darlington High voltage ignition coil driver Ignition Driver IC bu941 npn DARLINGTON 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941 DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL


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    BU941 250mA 300mA vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor transistor bu941 ignition coil bu941 ignition coil npn power darlington High voltage ignition coil driver Ignition Driver IC bu941 npn DARLINGTON 10A PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: High voltage ignition coil driver vce 500v NPN Transistor BU941T ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN DARLINGTON 10A 500V ignition coil driver
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941T DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL


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    BU941T 250mA 300mA vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver vce 500v NPN Transistor BU941T ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN DARLINGTON 10A 500V ignition coil driver PDF

    vce 500v NPN Transistor

    Abstract: vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver ignition coil bu941 bu941 ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN Transistor VCEO 450V
    Text: Product Specification www.jmnic.com BU941 Silicon NPN Power Transistor DESCRIPTION ・High Voltage ・DARLINGTON APPLICATIONS ・High ruggedness electronic ignitions ・High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER


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    BU941 100mA 250mA 300mA vce 500v NPN Transistor vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver ignition coil bu941 bu941 ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN Transistor VCEO 450V PDF

    2N4298

    Abstract: No abstract text available
    Text: 2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER


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    2N4296 2N4298 2N4299 2N4296, 2N4298, 2N4299 100mA 100mA, 2N4298 PDF

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


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    BU941 O-220 QW-R203-025 hFE-100 NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100 PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


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    BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941 PDF

    BU941

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


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    BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941 PDF

    TIP50

    Abstract: vce 500v NPN Transistor TIP47 TIP48 TIP49
    Text: NPN High Voltage Power Transistors TIP47/48/49/50 NPN High Voltage Power Transistors Features • Application for High Voltage and Switching Circuit • RoHS Compliant TO-220 Maximum Ratings T Ambient=25ºC unless noted otherwise Symbol Description Collector-Base Voltage:


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    TIP47/48/49/50 O-220 TIP47 TIP48 TIP49 TIP50 TIP50 vce 500v NPN Transistor TIP47 TIP48 TIP49 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN High Voltage Power Transistors TIP47/48/49/50 NPN High Voltage Power Transistors Features • Application for High Voltage and Switching Circuit • RoHS Compliant Maximum Ratings T Ambient=25ºC unless noted otherwise Symbol Description Collector-Base Voltage:


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    TIP47/48/49/50 TIP47 TIP48 TIP49 TIP50 PDF

    TIP50

    Abstract: vbe 10v, vce 500v NPN Transistor TIP47 NPN Transistor 1A 400V TIP48 TIP49 NPN Transistor TO220 vcc 150V transistor tip47 vce 500v NPN Transistor 400V1A
    Text: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE VCEO(sus : 250 to 400V) 1A RATED COLLECTOR CURRENT TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 350 V :TIP48 400 V :TIP49 450 V :TIP50


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    TIP47/48/49/50 O-220 TIP48 TIP49 TIP50 TIP47 TIP50 vbe 10v, vce 500v NPN Transistor TIP47 NPN Transistor 1A 400V TIP48 TIP49 NPN Transistor TO220 vcc 150V transistor tip47 vce 500v NPN Transistor 400V1A PDF

    nte98

    Abstract: No abstract text available
    Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


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    NTE98 NTE98 PDF

    transistor bu931

    Abstract: bu931 equivalent NPN DARLINGTON 10A 500V BU931 vbe 10v, vce 500v NPN Transistor NPN Transistor VCEO 450V ignition coil npn power darlington Darlington NPN Silicon Diode vce 500v NPN Transistor transistor npn 500v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931 DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL


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    BU931 100mA 250mA transistor bu931 bu931 equivalent NPN DARLINGTON 10A 500V BU931 vbe 10v, vce 500v NPN Transistor NPN Transistor VCEO 450V ignition coil npn power darlington Darlington NPN Silicon Diode vce 500v NPN Transistor transistor npn 500v PDF

    150w darlington transistor to3 package

    Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
    Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


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    NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV PDF

    pnp 500v

    Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


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    NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA pnp 500v vbe 10v, vce 500v NPN Transistor NTE175 PDF

    vce 500v NPN Transistor

    Abstract: NPN Transistor 1A 400V vbe 10v, vce 500v NPN Transistor HP50 VCE-500V 300V transistor npn 2a
    Text: NPN S I L I C O N TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP50 █ APPLICATIONS High Voltage And switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature……………………………… 150℃


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    O-220 vce 500v NPN Transistor NPN Transistor 1A 400V vbe 10v, vce 500v NPN Transistor HP50 VCE-500V 300V transistor npn 2a PDF

    nte175

    Abstract: NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching


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    NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175 PDF

    tip50

    Abstract: tip49 TIP47 tip48
    Text: TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor • High Voltage and Switching Applications • High Sustaining Voltage : VCEO sus = 250 - 400V • 1A Rated Collector Current TO-220 1 1.Base Absolute Maximum Ratings* 2.Collector 3.Emitter Ta = 25°C unless otherwise noted


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    TIP47/TIP48/TIP49/TIP50 O-220 TIP47 TIP48 TIP49 TIP50 tip50 tip49 TIP47 tip48 PDF

    TIP50

    Abstract: TIP48 TIP47 TIP49 300V transistor npn 2a vbe 10v, vce 500v NPN Transistor OF TRANSISTOR tip47 tip50 fairchild
    Text: TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor • High Voltage and Switching Applications • High Sustaining Voltage : VCEO sus = 250 - 400V • 1A Rated Collector Current TO-220 1 1.Base Absolute Maximum Ratings* 2.Collector 3.Emitter T a = 25°C unless otherwise noted


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    TIP47/TIP48/TIP49/TIP50 O-220 TIP47 TIP48 TIP49 TIP50 TIP50 TIP48 TIP47 TIP49 300V transistor npn 2a vbe 10v, vce 500v NPN Transistor OF TRANSISTOR tip47 tip50 fairchild PDF

    L-120L

    Abstract: UMT1007 UMT1006 5A5A
    Text: UMT1006 UMT1007 POWER TRANSISTORS 5A, 500V, Fast Switching, High Es/b Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power transistors combine fast switching, low saturation voltage and rugged Es/b capability. They are designed for use in off-line power sup­


    OCR Scan
    UMT1006 UMT1007 540/iJ S50C1 L-120L UMT1007 5A5A PDF