Untitled
Abstract: No abstract text available
Text: Thin Film Technology Corporation p North Mankato, Minnesota 507 625-8445 Temperature Variable Attenuator Ch Characteristics t i ti • Attenuation varies with temperature • Reduces R d ttemperature t effect ff t off amplifier lifi circuits i it • Provides flat gain response of amplifier circuits
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Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v04.0308 Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +33 dBm • Microwave Radio & VSAT
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HMC625LP5
625LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v08.0210 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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H625
Abstract: HMC625LP5 HMC625LP5E broadband bias tee
Text: HMC625LP5 / 625LP5E v07.0709 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
H625
HMC625LP5E
broadband bias tee
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H625
Abstract: HMC625LP5 HMC625LP5E
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
H625
HMC625LP5E
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v05.0309 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
pro58
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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H625
Abstract: HMC625LP5 variable capacitor variable gain amplifier GHz HMC625LP5E acg-6 broadband bias tee
Text: HMC625LP5 / 625LP5E v06.0409 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
H625
variable capacitor
variable gain amplifier GHz
HMC625LP5E
acg-6
broadband bias tee
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Untitled
Abstract: No abstract text available
Text: HMC625ALP5E v01.0314 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625ALP5E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC625ALP5E
HMC625ALP5E
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Untitled
Abstract: No abstract text available
Text: HMC625ALP5E v00.0113 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625ALP5E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC625ALP5E
HMC625ALP5E
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phase detector 3GHz
Abstract: ndk 50MHz 40VA variable power divider
Text: Crystal Bridge to the Future 3GHz 低位相雑音 CW信号発生器 製品形名：SG010M3R0GA < 特長 > 出力周波数 ： 10MHz～3GHz （1Hzステップ可変） 低位相雑音 ： Typ. -95dBc/Hz@10kHz （3GHz出力時） 小型・軽量 ： 200 x 320 x 90mm 約3.5kg
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SG010M3R0GA
10MHz3GHz
-95dBc/Hz
10kHz
12dBm
10MHz
500MHz
1000MHz
2000MHz
3000MHz
phase detector 3GHz
ndk 50MHz
40VA
variable power divider
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Untitled
Abstract: No abstract text available
Text: HMC625ALP5E v00.0113 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625ALP5E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC625ALP5E
HMC625ALP5E
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H542
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v00.0607 Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure High Output IP3: +33 dBm • WiBro / WiMAX / 4G TTL/CMOS Compatible Serial or Parallel Control
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HMC625LP5
625LP5E
HMC625uation
H542
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H542
Abstract: HMC625LP5 HMC625LP5E variable gain amplifier 3GHz PCB SMT
Text: HMC625LP5 / 625LP5E v01.0907 Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure High Output IP3: +33 dBm • WiBro / WiMAX / 4G TTL/CMOS Compatible Serial or Parallel Control
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HMC625LP5
625LP5E
H542
HMC625LP5E
variable gain amplifier 3GHz
PCB SMT
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v03.0108 Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +33 dBm • Microwave Radio & VSAT
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HMC625LP5
625LP5E
25mm2
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N7 thermistor
Abstract: 20/shicoh n7
Text: DATA BOOK Thin Film Components Variable Chip Attenuators SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Combine a NTC at the center of a thin film chip attenuator in parallel. Protection film Thermistor Resistor Resistance film Electrode grounded terminal
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PBX1632S
PXV1220S
PBV1632S
PBV1632S-4dB-N4
20pcs)
PBV1632S-6dB-N4
N7 thermistor
20/shicoh n7
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AT02M750
Abstract: No abstract text available
Text: AT02M750.08 - Page 1 of 10 Product Family: Temperature Variable Attenuators Part Number Series: ATV0805J Series 10GHz Construction: Features: • High purity Alumina Substrate Thermo-sensitive thermistor
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AT02M750
ATV0805J
10GHz)
10GHz
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Untitled
Abstract: No abstract text available
Text: AT02M750.08 - Page 1 of 10 Construction: • High purity Alumina Substrate Thermo-sensitive thermistor Ni alloy thin-film resistive elements 100% matte tin finish terminations RoHS compliant and Pb Free
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AT02M750
10GHz
ATV0805J
10GHz
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Common Highway 4 X 4 Switch Matrix Design Concept
Abstract: Switch Matrices diode matrix Weinschel attenuator Weinschel attenuator matrix diode matrix diagram MMIC switches weinschel weinschel step attenuator
Text: Common Highway 4x4 Switch Matrix 7/28/2004 Aeroflex / Weinschel Subsystems Common Highway 4 x 4 Switch Matrix Design Concept 28 July 2004 Prepared by: 5305 Spectrum Drive, Frederick, MD 21703 301-846-9222 ● Fax: 301-846-9116 ● www.aeroflex-weinschel.com
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VARIABLE ATTENUATOR, dc TO 3gHZ
Abstract: No abstract text available
Text: AT02M750.06 - Page 1 of 14 Product Family: Temperature Variable Attenuators Part Number Series: ATV0805C Series Construction: Features: • High purity Alumina Substrate Thermo-sensitive thermistor
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AT02M750
ATV0805C
ATV0805C-9dB
ATV0805C-10dB
VARIABLE ATTENUATOR, dc TO 3gHZ
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Untitled
Abstract: No abstract text available
Text: AT02M750.06 - Page 1 of 14 Construction: • High purity Alumina Substrate Thermo-sensitive thermistor Ni alloy thin-film resistive elements 100% matte tin finish terminations RoHS compliant and Pb Free
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AT02M750
ATV0805C
AGC13
ATV0805C-10dB
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Untitled
Abstract: No abstract text available
Text: AV0805 Thin Film Surface Mount Temperature Variable Chip Attenuator The ims AV-0805 thin film surface mount temperature variable chip attenuator is ideal for applications requiring precise attenuation with integrated temperature compensation in a small form factor. This attenuator is designed in the PI configuration. Thin film technology insures a low noise, precise attenuator at a very affordable
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AV0805
AV-0805
layer10
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Quarz AG
Abstract: 1/PXV1220S
Text: THIN FILM TECHNOLOGY DATA BOOK Thin Film C o m p o n e n t s Variable Chip Attenuators Thin Film Power SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Com bine a NTC at the center of a thin film chip attenuator in parallel. Resistor Protection film
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PBX1632S
PXV1220S
due702,
Quarz AG
1/PXV1220S
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