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    VALENCE SEMICONDUCTOR Search Results

    VALENCE SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    VALENCE SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    engine control unit

    Abstract: engine ecu program automotive ecu circuit electronic control unit engine TA0311 ECU ENGINE automotive ecu igbt ignition engine control module operational amplifier so14 with standby
    Text: TA0311 TECHNICAL ARTICLE High Temperature Electronics 1 Introduction In the semiconductor world, there are numerous products specified with an industrial temperature range -40/+85°C , and somewhat fewer with an automotive temperature range (-40/+125°C).


    Original     		PDF TA0311 engine control unit engine ecu program automotive ecu circuit electronic control unit engine TA0311 ECU ENGINE automotive ecu igbt ignition engine control module operational amplifier so14 with standby

    AP-903

    Abstract: Valence Semiconductor AP903 1N4148 RadioCd
    Text: AP903 FREQUENCY COUNTER WITH CLOCK AND ALARM AP903 Frequency Counter with Clock and Alarm AP903 FREQUENCY COUNTER WITH CLOCK AND ALARM Table of Contents 1. OVERVIEW . 1


    Original     		PDF AP903 AP-903 Valence Semiconductor AP903 1N4148 RadioCd

    ap902m

    Abstract: walkie-talkie diagram walkie-talkie circuit AP-902 clock display AP902M-004 divide-by-10 6- 7 segment 24 hr clock circuit 7 segment display 30 pin configuration clock 5 digit 7 segment LCD display pin configuration
    Text: AP902M FREQUENCY AND CLOCK DISPLAY CONTROLLER AP902M Frequency and Clock Display Controller AP902M FREQUENCY AND CLOCK DISPLAY CONTROLLER Table of Contents 1. OVERVIEW .1


    Original     		PDF AP902M ap902m walkie-talkie diagram walkie-talkie circuit AP-902 clock display AP902M-004 divide-by-10 6- 7 segment 24 hr clock circuit 7 segment display 30 pin configuration clock 5 digit 7 segment LCD display pin configuration

    16 channel GPS receiver module

    Abstract: RTCM-SC104 Valence Semiconductor VM7001 gps receiver VS7001 Valence sony GPS VS7001-REF4 CXD2931R-9
    Text: VM7001 www.valencesemi.com GPS Reference Module Module Specification VM7001 Module Specification Features: High Performance 16-channel GPS Receiver. The VM7001 is a complete high performance 16-channel GPS receiver module. The compact size and low power make this module


    Original     		PDF VM7001 VM7001 16-channel SC104 R-003. VS7001 16 channel GPS receiver module RTCM-SC104 Valence Semiconductor gps receiver Valence sony GPS VS7001-REF4 CXD2931R-9

    carbon monoxide detector

    Abstract: electrochemical sensor CO gas sensor CO "Co Sensor" carbon monoxide sensor carbon monoxide sensor electrochemical NGL07 D3162 Capteur Sensors NGL07 electrochemical gas sensors datasheet
    Text: General information on the Capteur NGL07 Carbon Monoxide sensors Principle of Operation The Capteur ‘G’ series sensor is a Mixed Metal Oxide semiconductor based on Chromium Titanium Oxide. When heated to a high temperature the material behaves towards reducing gases as a p-type semiconductor and increases in


    Original     		PDF NGL07 carbon monoxide detector electrochemical sensor CO gas sensor CO "Co Sensor" carbon monoxide sensor carbon monoxide sensor electrochemical D3162 Capteur Sensors NGL07 electrochemical gas sensors datasheet

    ap8202q

    Abstract: AP8202 srs wow Valence AP8202-LQ-L NC-641 vr1 100k lin 018U PCB 3d SURROUND sound system circuit Valence ap8202q
    Text: AP8202 SRS WOW Audio Enhancement Processor AP8202 \ SRS WOW Audio Enhancement Processor AP8202 SRS WOW Audio Enhancement Processor Table of Contents 1. OVERVIEW . 1


    Original     		PDF AP8202 ap8202q AP8202 srs wow Valence AP8202-LQ-L NC-641 vr1 100k lin 018U PCB 3d SURROUND sound system circuit Valence ap8202q

    Untitled

    Abstract: No abstract text available
    Text: AP708 Flash Microcontroller for Hi-Fi System Application AP708 Flash Microcontroller for Hi-Fi System Application Datasheet Revision 1.0 January 22, 2013 AP708 Flash Microcontroller for Hi-Fi System Application Table of Contents 1. OVERVIEW . 1


    Original     		PDF AP708

    SLAAE10B

    Abstract: nec 96e BLOCK DIAGRAM OF ADC Valence Semiconductor MSP430 SLAUE10
    Text: Nonlinear Improvement of the MSP430 14ĆBit ADC Characteristic Application Report June 1999 Mixed Signal Products SLAA050 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF MSP430 14Bit SLAA050 specifiP430 14-Bit SLAA045 SLAA046 SLAAE10B nec 96e BLOCK DIAGRAM OF ADC Valence Semiconductor SLAUE10

    VS7001

    Abstract: Valence Semiconductor 1575.42 oscillator
    Text: VS7001 TM GPS Front End Downconverter Product Preview F e a t u r e s Complete highly integrated GPS Downconverter Chip. VS7001 Global Positioning System RF Front End The VS7001 is a high performance, state-of-the-art device utilizing leading edge RF CMOS design techniques to achieve extremely low power


    Original     		PDF VS7001 VS7001 Valence Semiconductor 1575.42 oscillator

    car subwoofer amplifier schematic circuit diagram

    Abstract: 5.1 surround sound amplifier circuits subwoofer schematic circuit for car audio amplifier 5.1 surrounding system circuit diagram subwoofer preamplifier circuit 5.1 surround sound diagrams subwoofer amplifier circuit diagram low pass subwoofer circuit diagram 5.1 surround sound dolby circuit diagrams 5.1 channel assembled home theater circuit diagram
    Text: a Decoder 5.1-Channel Soundfield Generator SSM2005 PIN CONFIGURATIONS FEATURES Generates 5.1-Channel Soundfield from All Stereo Sources No Pre-Encoding Required Excellent Decoding of Pre-Encoded Sources 4- or 5-Speaker Operation Subwoofer Output Full Bandwidth on All Channels


    Original     		PDF SSM2005 48-Lead SSM2005 C3628 car subwoofer amplifier schematic circuit diagram 5.1 surround sound amplifier circuits subwoofer schematic circuit for car audio amplifier 5.1 surrounding system circuit diagram subwoofer preamplifier circuit 5.1 surround sound diagrams subwoofer amplifier circuit diagram low pass subwoofer circuit diagram 5.1 surround sound dolby circuit diagrams 5.1 channel assembled home theater circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: Solid-State Electronics 48 2004 1717–1720 www.elsevier.com/locate/sse Reliability of SiC MOS devices q Ranbir Singh *, Allen R. Hefner National Institute of Standards and Technology, 100 Bureau Dr. MS 8120, Gaithersburg, MD 20899, USA Received 10 December 2003; accepted 15 March 2004


    Original     		PDF 15R-SiC

    Untitled

    Abstract: No abstract text available
    Text: CHAPTER 2 BASIC PRINCIPLES OF PHOTOMULTIPLIER TUBES 1 -5) A photomultiplier tube is a vacuum tube consisting of an input window, a photocathode, focusing electrodes, an electron multiplier and an anode usually sealed into an evacuated glass tube. Figure 2-1 shows the schematic


    Original     		PDF 10P-4) 0201EA NS-17,

    fujitsu polymer

    Abstract: gibbs phase rule applications 928523 compaq portable II benzene octane
    Text: MOPA C 2000 Next generation quantum mechanics package • Macromolecules: very fast, patented, linear-scaling MOZYME optimizes proteins, DNA… · Materials: d-orbitals, crystals, geometry in electric fields, NLO, 2D/3D periodic boundaries… · Polymers: band structures, phonon spectra, Young’s modulus, tensile strength…


    Original     		PDF MPCB-DG-6/99 fujitsu polymer gibbs phase rule applications 928523 compaq portable II benzene octane

    NL2024

    Abstract: lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B
    Text: P O W E R F O R P O R TA B L E E L E C T R O N I C S Rechargeable Batteries Keeping Up with Current Demand By Jeff Shepard W IRELESS MOBILITY is one of the major forces driving demand for, and demands on, rechargeable batteries. The latest devices in the mobile world


    Original     		PDF 710Wh/kg 300Wh/l, NL2024 lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B

    silicon carbide LED

    Abstract: silicon carbide
    Text: ¡g r technical information LU Êâi The semiconductor used in a solid state device consists initially of a carefully prepared pure material, having a crystalline structure. Ordinarily, since the crystal has relatively few free electrons, the pure semiconduc­


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    AVERAGE QUASI PEAK AND PEAK DETECTOR

    Abstract: nixie tube circuit
    Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction


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    silicon carbide LED

    Abstract: No abstract text available
    Text: MMM£^ TECHNICAL INFORMATION SOLID STATE LAMP THEORY LIGHT GENERATING SEMI CONDUCTORS The light-producting m aterial In a solid state lam p is a specially prepared sem iconductor m aterial. In order to better understand the operation of the solid state lamp, some of the basic semiconductor


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    100 Ohm 30W Micron

    Abstract: No abstract text available
    Text: U iM M ^ L ites TECHNICAL INFORMATION SOLID STATE LAMP THEORY The semiconductor used in a solid state device consists initially of a c a re fu lly p re p a re d p u re m a te ria l, ha vin g a c ry s ta llin e s tru c tu re . Ordinarily, since the crystal has relatively few free electrons, the pure


    OCR Scan     		PDF MIL-STD-683B Methodl005 40ffi5 atea12 100 Ohm 30W Micron

    floating-gate

    Abstract: Valence eeprom memory cell
    Text: EEPROM Process Information PROCESS AND TECHNOLOGY AM D's EEPROM technology is based on the highly successful N-channel EPROM process that has had years of manufacturing history at AMD. To achieve the goal of electrical erasability, an additional masking step


    OCR Scan     		PDF 0324A-006A floating-gate Valence eeprom memory cell

    esaki Diode

    Abstract: No abstract text available
    Text: E li OPTOELECTRONICS IMPROPER TESTING METHODS FOR LED DEVICES AN603 In any manufacturing operation it is essential that the materials used in the fabrication process meet the minimum quality specifications of the device under production. To that end, prudent manufacturers establish


    OCR Scan     		PDF AN603 esaki Diode

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES C O C S -5 .1 Decoder 5.1-Channel Soundfield Generator SSM2005 PIN CONFIGURATIONS FEATURES Generates 5.1-Channel Soundfield from All Stereo Sources N o Pre-Encoding Required Excellent D ecoding of Pre-Encoded Sou rce s 4- or 5-Speaker Operation


    OCR Scan     		PDF SSM2005 48-Lead

    Untitled

    Abstract: No abstract text available
    Text: SI LI CON PHOTOE DDE T H E O R Y A N D A P P L I C A T I O N I Introduction Photodetectors detect optical signals and convert them into electrical signals. They are used in a multitude of applications, including medical instrumentation, encoders, position sensing,


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    HE8811

    Abstract: No abstract text available
    Text: Section 2 Chip Structures 2.1 Laser Diodes Structures 2.1.1 G aA lA s LD Structure T h e p - ty p e a c tiv e la y e r , in w h i c h s t i m u l a t e d emission enforces optical amplification figure 2 - 1 (a , is processed first. The p-n junction is made


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    LED Display Theory

    Abstract: No abstract text available
    Text: NTE Type No. Description and Application Diag. No. Qty Per Bag Ind Pkg Size Typical Viewing Angle ° Viewed Color Typical Forward Voltage Drop (Volts) Maximum Reverse Breakdown Voltage (Volts) Maximum DC Forward Current <mA) Maximum Power Dissipation (mW)


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