vactrol
Abstract: vactec vactrol vtl1a3 VTL1A3 vactec vactrol vtl1b5 Photoresistor neon lamp 220 volt VTL1A4 VTL186 lem HA
Text: ¡3 “ is Material FI HERMETIC SEALED VACTROL 2° C l VACTEC Copyrighted VACTEC P i Bulletin VTL-1 By Its Respective M A X IM U M RATINGS lOOmW — derate 2mW/’ C above 25°C case temperature — 55*C to -f- 70“C operating and storage Case temperature 4
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Untitled
Abstract: No abstract text available
Text: 5LE D BQBGbG^ D D O i n O IbS IVCT VTA-C50 .050" NPN Photodarlington Chip E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTA-C50
2850K)
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Untitled
Abstract: No abstract text available
Text: 5bE J> m 30301, 0^ 0001502 70? GaAs Infrared Emitting Diodes VTE-C11 11 mil Chip — 940 nm E 6 & G »VCT VACTEC DESCRIPTION PACKAGE DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C11
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Vactec
Abstract: VTT-C40 phototransistor peak 550 nm Vactec 25
Text: S bE D • 3Q3ÜLÜT 0001174 T12 M V C T .040" NPN Phototransistor Chip .*“' ^ ‘7 VTT-C40 E G & G VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C40
Vactec
VTT-C40
phototransistor peak 550 nm
Vactec 25
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Photodiode vactec
Abstract: S1723-04 "CT scan" VTH209XDS QQQ112M VTH2090 VTH2091
Text: 3D3übüT SbE ÜG Ü1 1 23 IVCT SSG J^EG&G VACTEC T ^ l- 5 3 VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE VTH2090, 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT E G & G VACTEC -PRODUCT DESCRIPTIO N This PIN photodiode consists of a chip with a
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VTH209XDS
VTH2090,
S1723-04,
Photodiode vactec
S1723-04
"CT scan"
QQQ112M
VTH2090
VTH2091
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Untitled
Abstract: No abstract text available
Text: BDBObD'i O OO llö b 734 • V C T SbE D VTT-C60 .060* NPN Phototransistor Chip E GIG DESCRIPTION T - 4 1-^-7 VACTEC CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C60
30bCH
2850K)
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VTT-C50
Abstract: Vactec
Text: .S b E D BDaObO^ OOOllflD .050" NPN Phototransistor Chip 21b HI V C T VTT-C50 E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C50
2S50K)
VTT-C50
Vactec
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infrared led chip
Abstract: GDQ1213 VTE-C11
Text: S bE D • BOBDbCH GDQ1213 STE ■ GaAIAs Infrared Emitting Diodes VCT <3 V T E -C 1 1 A L 11 mil Chip — 880 nm E G 8. G VACTEC “ DESCRIPTION PACKAGE DIMENSIONS inch (mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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GDQ1213
VTE-C11
infrared led chip
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Untitled
Abstract: No abstract text available
Text: SbE ]> 3 D 3 D b O c] 0Q0111S «VCT VTP8C03DS R bv . A PHOTODIODE ARRAY 8 ELEM ENT J ^ E G zO VACTEC VTP8C03 O P T O E L E C T R O N IC S E G & G VACTEC T-^I-55 FEATURES PRODUCT DESCRIPTIO N • 8 Element array • Common cathode • Symmetrically arranged bond pads
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0Q0111S
VTP8C03DS
VTP8C03
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Vactec
Abstract: VTA-C50 Vactec 25
Text: 5LE D BGBGbCn ODOllRG IbS IVCT V T A -C 50 .050" NPN Photodarlington Chip E G & G VACTEC C H I P D I M E N S I O N S inch mm D E S C R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTA-C50
T-41-47
2850K)
Vactec
VTA-C50
Vactec 25
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Untitled
Abstract: No abstract text available
Text: 5bE » • a Q a Q b O T Q0Q1214 4E=J ■ V C T GaAIAs Infrared Emitting Diodes VTE-C15AL 15 mil Chip — 880 nm _ E G & G VACTEC DESCRIPTIO N PACKAGE D IM EN SIO N S Inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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Q0Q1214
VTE-C15AL
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diode.18
Abstract: VTE-C18AL Vactec
Text: ShE D • 3Q30bQ^ D0Ü1E15 3 bS GaAIAs Infrared Emitting Diodes VTE-C18AL 18 mil Chip — 880 nm r E G 8« G HVCT -m -iS VACTEC DESCRIPTION PAC K AG E DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C18AL
diode.18
VTE-C18AL
Vactec
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Vactec 25
Abstract: Vactec phct VTT-C60
Text: 3030bDti GQOliab 7 3 4 5t>E D .060" NPN Phototransistor Chip V TT-C 60 E G & G VACTEC C H IP D IM E N S IO N S inch mm> D E SC R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C60
3030bCH
T-41-47
2850K)
Vactec 25
Vactec
phct
VTT-C60
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diode.18
Abstract: Vactec 25 Vactec VTE-C18
Text: 5LE D • 3 D 3 0 b Q cl □ □ □ 1 2 0 3 b43 H V C T GaAs Infrared Emitting Diodes VTE-C18 18 mil Chip — 940 nm T-si-n E G & G VACTEC DESCRIPTION PACKAGE DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3D30b0cl
00012D3
VTE-C18
diode.18
Vactec 25
Vactec
VTE-C18
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vactec vactrol
Abstract: VTL1B6 neon vactrol
Text: FI VACTEC HERMETIC SEALED VACTROL. C l Ch VACTEC Bulletin V TL-1 1— 3 P H O TO CE LL 2 — 4 LIQ H T S O U R C E M A X I M U M R A T IN G S lO Om W — derate 2mW/*C above 25°C case tem perature Case tem perature 4 — 55*C to -f- 70*C operating and storage
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Untitled
Abstract: No abstract text available
Text: 5bE J> m 3 0 3 0 ^ D0Ü1E15 3bS B V C T GaAIAs Infrared Emitting Diodes V T E -C 1 8 A L 18 mil Chip — 880 nm E C U T-m-iq VACTEC PACKAGE DIMENSIONS inch mm DESCRIPTION EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C15AL
Abstract: No abstract text available
Text: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3G30bDT
D001214
VTE-C15AL
VTE-C15AL
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Vactec photocell
Abstract: VTL9A10 VTL9A9
Text: □Bi Fl Q > fi VACTEC vactec GENERAL PURPOSE VACTROLS Bulletin VTL 9 D IM EN SIO N D R A W IN G S V T L 9 Series B o tto m V ie w M A XIM U M RATINGS M a x im u m case d is s ip a tio n 5 4 0 0 m W — derate 1 0 m W / *C ab o ve 35*C — case M a x im u m cell p o w e r
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3D30b0q
QQQD701
Vactec photocell
VTL9A10
VTL9A9
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vactrol
Abstract: VTL1A3 Vactec vactec vactrol Vactec photocell Photoresistor VTL1B5 vactec vactrol vtl1a3 neon vactrol VTL1A4
Text: Powered by VÂCTEC P i HERMETIC SEALED VACTROL 99 G\ VACTEC ICminer.com m Electronic-Library Bulletin VTL-1 M A X IM U M RATINGS lOOmW — derate 2mW/*C above 25°C case temperature Thesa Vactrols combine incandescent Case temperature 4 or neon lamps with a photoresistor
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VTB0912
Abstract: VTB0913 VTBQ914
Text: S bE 303Gb[n J> 0001DE7 V T B 0 9 1 2, 13, 14 VTB Process Photodiodes E G & G IVCT 515 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 25 ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40°C to 1 10°C Operating Temperature: -40°C to 1 10°C
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303DbQ1
0001D27
VTB0912,
VTB0912
VTB0913
VTBQ914
2x101z
oxio13
x1013
VTB0912
VTB0913
VTBQ914
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VTT3122E
Abstract: VTT3121E VTT3123E
Text: 5bE D • 3030^0^ 0001171 .025" NPN Phototransistors 50 3 H V C T VTT31 21 E, 2E, 3E Hermetic Coax Package w/ Emitter Lead E G & G VACTEC T—41—67 PACKAGE DIMENSIONS inch mm CASE 5 COAX HERMETIC (WITH CASE LEAD) CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS H
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3Q30bÃ
VTT31
T-41-61
VTE31xx
4001c
VTT3121E
VTT3122E
VTT3123E
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Untitled
Abstract: No abstract text available
Text: 5bE D • 3D3DbDR DGOIOTS fibb VTS VTS-1 Process Photodiodes E HVCT 64, G & & VACTEC PRODUCT DESCRIPTION 65 T-41-51 PACKAGE DIMENSIONS inch mm Five cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode.
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T-41-51
100mW/cm2
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VTA1111
Abstract: VTA1112 lensed
Text: SbE T> IVCT BDBObDT OQoina VTA1111, 1112 .050" NPN Photodarlingtons TO-46 Lensed Package E & G G VACTEC T-4\.U>3 PACKAGE DIMENSIONS inch mm CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: 50A PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS B (@ 25°C u n le s s otherw ise noted)
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3G30bD1
VTA1111,
100/xA
VTA1111
VTA1112
lensed
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VTP413
Abstract: No abstract text available
Text: Sb E D BDBDbD^ OOOlGbH HVCT VTP Process Photodiodes VTP413 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible
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VTP413
T-41-51
Temperatu75
2x1013
VTP413
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