V75 marking
Abstract: No abstract text available
Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
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NE3503M04
NE3503M04-A
NE3503M04-T2-A
IR260
HS350
V75 marking
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V75 marking
Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
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NE3503M04
NE3503M04-A
NE3503M04-T2-A
V75 marking
NE3503M04-A
transistor marking v75 ghz
LNB ku band
HS350
NE3503M04
NE3503M04-T2-A
m04 marking
V75 4pin
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marking code V75
Abstract: No abstract text available
Text: Tel : Fax : email : 0044 0 118 979 1238 0044 (0)118 979 1283 info@actcrystals.com ACT CM75LJ and CM53LJ Series of low jitter VCXO The ACTCM family of VCXO'S are part of ACT's low jitter family of oscillators. These 6 pad miniature SMD VCXO are offered in 7 x 5 mm and 5 x 3.2mm ceramic seam sealed packages. They are available with HCMOS,
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CM75LJ
CM53LJ
45GHz,
/-200ppm
90ppm
100ppm)
V75-2700C
-C1501-PF)
ISO9001
marking code V75
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SCR 2N5060 applications
Abstract: 2n5060 SCR 2N5060 2N5061G 102c marking 2n5062
Text: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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2N5060
O-92/TO-226AA
2N5060RLRA
2N5060RLRM
2N5061
2N5061G
2N5061RLRA
2N5061RLRAG
2N5061RLRM
SCR 2N5060 applications
SCR 2N5060
102c marking
2n5062
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transistor marking v75 ghz
Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04-T2
transistor marking v75 ghz
NE3503M04
PG10456EJ01V1DS
HS350
NE3503M04-T2
nec marking power amplifier
nec microwave
m04 marking
NE3503
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transistor marking v75 ghz
Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04-A
NE3503M04-T2
NE3503M04-T2-A
NE3503M04-T2B
NE3503M04-T2B-A
transistor marking v75 ghz
nec microwave
transistor v75
NE3503M04-A
HS350
NE3503M04
NE3503M04-T2
NE3503M04-T2-A
LNB ku band
V75 marking
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transistor marking v75 ghz
Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04-A
NE3503M04-T2
NE3503M04-T2-A
NE3503M04-T2B
NE3503M04-T2B-A
transistor marking v75 ghz
nec microwave
Ku BAND SUPER LOW NOISE type c
NE3503M04
NE3503M04-A
NE3503M04-T2
HS350
NE3503M04-T2-A
V75 4pin
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microwave office
Abstract: transistor marking v75 ghz nec microwave
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04
NE3503M04-T2
NE3503M04-A
NE3503M04-T2-A
NE3503M04-T2B-A
microwave office
transistor marking v75 ghz
nec microwave
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transistor marking v75 ghz
Abstract: transistor v75
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04
NE3503M04-T2
transistor marking v75 ghz
transistor v75
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transistor marking v75 ghz
Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04
NE3503M04-T2
NE3503M04-T2B
NE3503M04-A
NE3503M04-T2-A
NE3503M04-T2B-A
PG10456EJ03V0DS
transistor marking v75 ghz
LNB ku band
HS350
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NE3503M04
Abstract: s parameter of transistor ne3503m04 transistor marking v75 ghz NE3503M04-A HS350 NE3503M04-T2 NE3503M04-T2-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TLP358H
Abstract: 11-10C4S TLP358
Text: TLP358H Photocouplers GaAℓAs Infrared LED & Photo IC TLP358H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED
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TLP358H
TLP358H
11-10C4S
TLP358
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Untitled
Abstract: No abstract text available
Text: TLP358HF Photocouplers GaAℓAs Infrared LED & Photo IC TLP358HF 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358HF is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED
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TLP358HF
TLP358HF
TLP358H.
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TLP358
Abstract: No abstract text available
Text: TLP358F Photocouplers GaAℓAs Infrared LED & Photo IC TLP358F 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358F is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED
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TLP358F
TLP358F
TLP358.
TLP358
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TLP358
Abstract: No abstract text available
Text: TLP358 Photocouplers GaAℓAs Infrared LED & Photo IC TLP358 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED
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TLP358
TLP358
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Untitled
Abstract: No abstract text available
Text: TLP358H Photocouplers GaAℓAs Infrared LED & Photo IC TLP358H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED
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TLP358H
TLP358H
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SC-7415
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET 74LVC1G57 Low-power configurable multiple-function gate Product specification 2004 Jun 30 Philips Semiconductors Product specification Low-power configurable multiple-function gate 74LVC1G57 FEATURES DESCRIPTION • Wide supply voltage range from 1.65 to 5.5 V
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74LVC1G57
74LVC1G57
SC-7415
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IDT8N4S270
Abstract: Marking code mps
Text: IDT8N4S270 LVDS Frequency-Programmable Crystal Oscillator DATASHEET General Description Features The IDT8N4S270 is a Factory Frequency-Programmable Crystal Oscillator with very flexible frequency programming capabilities. The device uses IDT’s fourth generation FemtoClock NG technology for
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IDT8N4S270
IDT8N4S270
476MHz
67MHz
975MHz
300MHz
218Hz
Marking code mps
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Untitled
Abstract: No abstract text available
Text: LVDS Frequency-Programmable Crystal Oscillator IDT8N4S270 DATASHEET General Description Features The IDT8N4S270 is a Factory Frequency-Programmable Crystal Oscillator with very flexible frequency programming capabilities. The device uses IDT’s fourth generation FemtoClock NG technology for
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IDT8N4S270
IDT8N4S270
218Hz
476MHz
67MHz
975MHz
300MHz
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IDT8N4DV85
Abstract: No abstract text available
Text: LVDS Dual-Frequency Programmable VCXO IDT8N4DV85 DATASHEET General Description Features The IDT8N4DV85 is a LVDS Dual-Frequency Programmable VCXO with very flexible frequency and pull-range programming capabilities. The device uses IDT’s fourth generation FemtoClock NG
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IDT8N4DV85
IDT8N4DV85
476MHz
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rjge
Abstract: No abstract text available
Text: bELT/1 APE' 'IFI-l'.-.TION FOR .-.PPF: '\-.L Rev.: C C u s to m e r P a r t No.: Delta P a r t No.: RJGE-12BF5290DR P a r t Name: RJ45 ICM LAN FILTER IN CONNECTER" 12 PORT (RoHS COMPLIANT 4. M ech anical D im ension: G reen/Y ellow LED 0O.45[0O.O18] Unit : m m /in c h
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RJGE-12BF5290DR
l-40M
40-60M
60-80MHz
t-100M
2250VDC
60Sec
100KHz
350uH
100KHz
rjge
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W6 13A Diode
Abstract: 930 18a motorola zener 2a7 Motorola 581 1A6 Zener 139 v91 T 348 opto marking 314
Text: M O T O R O L A SC D I ODE S/ OPT O b3b7SSS 0DÔ1337 T 5SE D Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A 3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener O vervoltage Transient Su p p re ssors . the 1.5SM C6.8 series is designed to protect voltage sensitive com ponents from high
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b3b72S5
W6 13A Diode
930 18a motorola
zener 2a7
Motorola 581
1A6 Zener
139 v91
T 348
opto marking 314
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO b 3b ? 5 5 S 0 0 0 1 3 m 25E D 1 Order this data sheet by P6SMB6.8/D MOTOROLA SEM IC O N D U C T O R mmm T -il' TECHNICAL DATA P6SIVIB6.8,A Zen er O v e rv o lta g e T ran sie n t S u p p r e s s o rs thru P6SM B200,A The P6SMB6.8 series is designed to protect voltage sensitive components from high
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 5S E b3b7SSS D 0DÔ1337 T Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener Overvoltage Transient Su ppressors . . . the 1 .5 S M C 6 .8 se rie s is d e sig n e d to protect vo lta ge sensitive c o m p o n e n ts from high
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5SMC200,
fl/89
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