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    Text: 17-Sep.'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> MG FC45 V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 5 V 5 9 6 4 A is an internally im pedance matched G aAs power F E T especially designed for use in 5 .9 - 6.4 G H z band amplifiers. The hermetically sealed metal-ceram ic


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    PDF 17-Sep. V5964A ltem-51]