Datasheet Archive: V53C318160A datasheets

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Mosel Vitelic Corporation V53C318160AT50 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44
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V53C318160A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
V53C318160A		Mosel Vitelic	3.3 VOLT 1M x 16 FAST PAGE MODE CMOS DYNAMIC RAM		Original	PDF

V53C318160A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
V53C318160A Abstract: No abstract text available Text: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns	Original	PDF	V53C318160A 16-bit cycles/16 cycles/256 V53C318160A
mn4117405 Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE	Original	PDF	CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Untitled Abstract: No abstract text available Text: M O S E L V IT E L IC V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tpj^c 50 ns 60 ns 70 ns Max. Column Address Access Time, (tcAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tpc) 35 ns	OCR Scan	PDF	V53C318160A 16-bit cycles/16 cycles/256 42-Pin 50/44-Pin

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V53C318160A

Abstract: No abstract text available
Text: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns

Original

PDF

V53C318160A 16-bit cycles/16 cycles/256 V53C318160A

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Original

PDF

CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

Untitled

Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tpj^c 50 ns 60 ns 70 ns Max. Column Address Access Time, (tcAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tpc) 35 ns

OCR Scan

PDF

V53C318160A 16-bit cycles/16 cycles/256 42-Pin 50/44-Pin

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