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Abstract: No abstract text available
Text: • « Y U N O Ä T • HY51V17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 V17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY51V17400B
V16400B
A0-A11)
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V17400B,HY51 V16400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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Abstract: No abstract text available
Text: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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TC51V16400BST-60/70
TheTC51V16400BST
TheTC51
V16400BST
TC51V16400BST
300mil)
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Abstract: No abstract text available
Text: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P
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B81V16400A-60
B81V16400A-70
6400A-60L
1V16400A-70L
B81V17400A-60
B81V17400A-70
7400A-60L
B81V17400A-70L
16400B-50
MB81V1640QB-60
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Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM V16400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16400B features a “fast page” mode of operation whereby high
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MB81V16400B-50/-60
MB81V16400B
MB81V16400B
26-pin
FPT-26P-M05)
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT. E A S ll^ V16400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16400B features a “fast page” mode of operation whereby high
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MB81V16400B-50/-60/-50L/-60L
MB81V16400B
F9712
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Untitled
Abstract: No abstract text available
Text: •«HYUNDAI HY51V17400B, V16400B 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F a s t P a g e m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs h ig h s p e e d
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HY51V17400B,
HY51V16400B
17400B
HY51V17400BSLJ
Y51V17400BT
16400B
Y51V16400BSLJ
Y51V16400BT
Y51V16400BSLT
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