V01C Search Results

Contextual Info: 15.10 12.80 LOGO DATE WEEK BACK SHEL HOUSIN C AB LE CONNECTOR FRONT SHEL PC B O A R D ' RECESSED MOUNTING CONFIGURATION 13.10 NOTE: 1. MATERIAL: HOUSING:NYLON GLASS-FIBER REINFORCED, UL94-V01CQL0R:BLACK. TERMINAL:PHOSPHOR BRONZE. METAL SHELL:FRONT SHELLrSUS 304

MA0403

Abstract: 9907 qml-38535 QML-38534
Contextual Info: f REVISIONS DATE YR-MO-OA DESCRIPTION LTR APPROVED R EV SHEET REV SH EET R EV STATUS O F SH EETS RE:v SH EET 1 2 4 5 6 7 . y y & ts c m THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE A M S C N/A ft ' d APPROVED BY

Contextual Info: •H Y UN D A I H Y 6 2 2 5 6 A S e r ie s 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A Series ‘HYUNDAI 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

AS4395

Abstract: AS4395-E ISO-4400 as4395e AS4395 E J1926-2 gefran 250 DIN 3852-A 16288 gefran 200
Contextual Info: TK PRESSURE TRANSMITTER Main Features • Ranges: from 0.3 to 0.500 bar and ranges from -1.+1 to -1.+10 bar • Output signal 4.20mA 2-wires / 0.1.5.1Vdc / 0.1.10.1Vdc / 0.5Vdc / 0.10Vdc / 1.5Vdc / 1.10Vdc • Protection rating: IP65/IP67

nt014

Abstract: HY62256A-I HD73
Contextual Info: HY62256A-I Series ‘•H Y U N D A I 3 2 K x 8-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

DC-06

Contextual Info: " H Y U N D A I H Y 6 2 V 2 5 6 B S e r ie s _ 32K x 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that

Siemens C

Abstract: GY0819 diode 1N 0403 "1u0 1206"
Contextual Info: SIEMENS CGY0819 GaAs MMIC • • • • • • Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains

LH5P832N12

Contextual Info: LH5P832 FEATURES • 32,768 x 8 bit organization • Access time: 100/120 ns MAX. • Cycle time: 160/190 ns (MIN.) • Power consumption: Operating: 357.5/303 mW Standby: 16.5 mW • TTL compatible I/O • 256 refresh cycle/4 ms • Auto refresh is executed by internal

HY638256T1

Abstract: HY638256 AM524 HY638256J15
Contextual Info: HY638256 -HYUNDAI CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees