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    V SOT323 Search Results

    V SOT323 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917N-8/NOPB Texas Instruments Frequency to Voltage Converter 8-PDIP -40 to 85 Visit Texas Instruments Buy

    V SOT323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "UHF Transistors"

    Abstract: ZUMTQ31A DSA0037349
    Text: SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTORS ZUMTQ31A ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL – T11 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO


    Original     		PDF OT323 ZUMTQ31A 100MHz 60MHz "UHF Transistors" ZUMTQ31A DSA0037349

    SOT323

    Abstract: ZUMTS20 DSA003735
    Text: SOT323 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 1 – DECEMBER 1998 ZUMTS20 ✪ PARTMARKING DETAIL — T3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO


    Original     		PDF OT323 ZUMTS20 100MHz SOT323 ZUMTS20 DSA003735

    SOT323-5L

    Abstract: STLQ50 STLQ50XX25 sot323xl
    Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output


    Original     		PDF STLQ50XX OT323-5L OT323-5L OT235L STLQ50 OT323-xL SOT323-5L STLQ50XX25 sot323xl

    RESISTOR BF 0207

    Abstract: STLQ50 STLQ50C50R
    Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output


    Original     		PDF STLQ50XX OT323-5L OT323-5L OT235L STLQ50 RESISTOR BF 0207 STLQ50C50R

    SOT323-5L

    Abstract: STLQ50 STLQ50M25R STLQ50ADJ STLQ50M50R sot323xl 709 SOT23 OUTPUT 3.3V PACKAGE SOT323
    Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output


    Original     		PDF STLQ50XX OT323-5L OT323-5L OT235L STLQ50 OT323-xL SOT323-5L STLQ50M25R STLQ50ADJ STLQ50M50R sot323xl 709 SOT23 OUTPUT 3.3V PACKAGE SOT323

    Untitled

    Abstract: No abstract text available
    Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output


    Original     		PDF STLQ50XX OT323-5L OT323-5L OT235L STLQ50

    RF IC

    Abstract: ZUMTS17 ZUMTS17H DSA003735
    Text: SOT323 NPN SILICON PLANAR RF TRANSISTORS ZUMTS17 ZUMTS17H ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — ZUMTS17 - T4 ZUMTS17H - T4H ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 25 V V CEO 15


    Original     		PDF OT323 ZUMTS17 ZUMTS17H ZUMTS17 ZUMTS17H 500MHz 100mV 183MHz 200MHz RF IC DSA003735

    NPN CD100 transistor

    Abstract: smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers
    Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 3 Semiconductors AUGUST 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. PMGD8000LN 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 2. PBSS4350X, PBSS5350X, PBSS4250X


    Original     		PDF PMGD8000LN OT323 OT363 PBSS4350X, PBSS5350X, PBSS4250X PBSS5250X SC-62 PMEG1020EV PMEG1020EA NPN CD100 transistor smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers

    PMF370XN

    Abstract: PMF280UN PMF290XN PMF400UN PMF780SN PMGD370XN PMGD400UN PMGD780SN PMGD8000LN SOT323 MOSFET P
    Text: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT323 and SOT363 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers


    Original     		PDF OT323 OT363 OT323 SC-70 SC-88 PMF370XN PMF280UN PMF290XN PMF400UN PMF780SN PMGD370XN PMGD400UN PMGD780SN PMGD8000LN SOT323 MOSFET P

    clk sot363

    Abstract: SOT323 MOSFET P dual sot363 PMGD780SN Philips 370 PMF280UN PMF290XN PMF370XN PMF400UN PMF780SN
    Text: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT323 and SOT363 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers


    Original     		PDF OT323 OT363 OT323 SC-70 SC-88 clk sot363 SOT323 MOSFET P dual sot363 PMGD780SN Philips 370 PMF280UN PMF290XN PMF370XN PMF400UN PMF780SN

    SOT323 MOSFET P

    Abstract: SOT363 MOSFET N sot323 dual sot363 PMF280UN PMF290XN PMF370XN PMF400UN NXP MOSFETs PMGD290XN
    Text: 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient


    Original     		PDF OT323 OT363 SOT323 MOSFET P SOT363 MOSFET N sot323 dual sot363 PMF280UN PMF290XN PMF370XN PMF400UN NXP MOSFETs PMGD290XN

    RC131

    Abstract: No abstract text available
    Text: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00057 FEATURES Seven Output Voltages: 5.0 V, 3.6 V, 3.3 V, 2.5 V, 1.8 V, 1.2 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage


    Original     		PDF ADP1829, APD210X ADP171X ADP171X RC131

    CC21 CAPACITOR

    Abstract: No abstract text available
    Text: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00059 FEATURES Seven Output Voltages: 3.6 V, 3.3 V,3.3l V 2.5 V, 1.8 V, 1.25 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage


    Original     		PDF ADP1829, APD210X ADP171X ADP171X CC21 CAPACITOR

    LBC807WT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors 3 COLLECTOR 1 BASE LBC807WT1 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50 V Emitter–Base Voltage V –5.0 V –500


    Original     		PDF LBC807WT1 /SC-70 LBC807WT1 SC-70 OT-323 LBC807WT1-3/3

    Si1305DL

    Abstract: Si1305DL-T1
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT


    Original     		PDF Si1305DL OT-323 SC-70 Si1305DL--T1 Si1305DL--T1--E3 08-Apr-05 Si1305DL-T1

    g4002

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A I L - T5 SO T 32 3 ABSOLUTE M A X IM U M RATINGS. SYM BOL PARAM ETER V A LU E U N IT V C BO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO


    OCR Scan     		PDF OT323 60MHz, g4002

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e


    OCR Scan     		PDF OT323 100jj 15KHz ZUMT5179

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 - DECEMBER 1998 Q_ PARTM ARKING DETAIL — T3 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e VcBO 30 V V C o lle c to r-E m itte r V o lta g e


    OCR Scan     		PDF OT323 ZUMTS20

    Untitled

    Abstract: No abstract text available
    Text: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. SVCBO b v ceo W m * b v EBO (V) . •CBO • VCB (V) <lC ES (nA) MIN MAX o es . e (V) (V) MIN General Purpose Amplifier/Switches v c e (s a t ) e v CE (mA) MAX


    OCR Scan     		PDF OT-23 350mW CMPTB099 CMPT930 CMPT2222A CMPT3904 CMPT4401 OT-323 250mW

    Untitled

    Abstract: No abstract text available
    Text: SÌ1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V d s (V) Id (A) ^D S (o n) ( ß ) 0.430 @ VQS = -4 .5 V -2 0 ± 0 .7 2 0.480 @ V q S = -3 .6 V ± 0 .6 8 ESD Protected 0.700 9 V GS = -2 .5 V ± 0 .5 6 3000 V SOT-323 SC-70 (3-LEADS)


    OCR Scan     		PDF 1303EDL OT-323 SC-70 S-99400-- 29-Nov-99 29-Nov-99

    GS 069 LF

    Abstract: No abstract text available
    Text: SM307EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V DS(V) 0.290 @ V g s = -1 2 I d (A) rDS(on) (ß ) -5 V ±0.91 V ± 0 .7 4 ESD Protected 0.580 @ V qs = -1 -8 V ± 0 .6 4 3000 V 0.435 @ VQS = -2 .5 SOT-323 SC-70 (3-LEADS) X X LF YY Marking Code


    OCR Scan     		PDF SM307EDL OT-323 SC-70 S-99405-- 29-Nov-99 1307EDL GS 069 LF

    SM305

    Abstract: No abstract text available
    Text: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)


    OCR Scan     		PDF OT-323 SC-70 S-63638-- 01-Nov-99 SM305 SM305

    W18 sot23

    Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
    Text: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA


    OCR Scan     		PDF 050I3) OT143 OT323 OT343 BFR92AW BFR93AW BFS17AW S852TW BFR181TW BFR182TW W18 sot23 ic w83 SOT343R bfp280tw SOT-343 BFP181TW

    diode ds 10-100 s

    Abstract: "MARKING CODE LE"
    Text: SÌ1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY r D S (o n) ( ß ) Ip (A) 0.280 @ V qs * -4 -5 V ± 0 .9 2 V d s (V) -8 0.380 @ VGS = —2.5 V ± 0 .7 9 ESD Protected 0.530 @ VGS = -1 .8 ± 0 .6 7 3000 V V SOT-323 SC-70 (3-LEADS) YY


    OCR Scan     		PDF 1305EDL OT-323 SC-70 S-99399-- 29-Nov-99 diode ds 10-100 s "MARKING CODE LE"