Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    V SOT-563 MOSFET Search Results

    V SOT-563 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    V SOT-563 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTZD3155CT1G

    Abstract: NTZD3155C NTZD3155CT2G NTZD3155CT5G
    Text: NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com •ăLeading Trench Technology for Low RDS on Performance •ăHigh Efficiency System Performance •ăLow Threshold Voltage


    Original     		PDF NTZD3155C OT-563 OT-563 NTZD3155C/D NTZD3155CT1G NTZD3155C NTZD3155CT2G NTZD3155CT5G

    NTZD3155CT2G

    Abstract: No abstract text available
    Text: NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com •ăLeading Trench Technology for Low RDS on Performance •ăHigh Efficiency System Performance •ăLow Threshold Voltage


    Original     		PDF NTZD3155C OT-563 NTZD3155C/D NTZD3155CT2G

    Untitled

    Abstract: No abstract text available
    Text: PPJX8802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V 0.7A Current SOT-563 Unit : inch mm Features  RDS(ON) , VGS@4,5V, ID@0.7A<150mΩ  RDS(ON) , VGS@2.5V, ID@0.5A<220mΩ  RDS(ON) , VGS@1.8V, ID@0.2A<400mΩ  Advanced Trench Process Technology


    Original     		PDF PPJX8802 OT-563 2011/65/EU IEC61249 OT-563 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJX138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V SOT-563 350mA Current Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology


    Original     		PDF PPJX138K OT-563 350mA 2011/65/EU IEC61249 OT-563 MIL-STD-750, 2013-REV

    PJX138K

    Abstract: No abstract text available
    Text: PPJX138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V SOT-563 350mA Current Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology


    Original     		PDF PPJX138K 350mA OT-563 2011/65/EU IEC61249 OT-563 MIL-STD-750, 2013-REV PJX138K

    Untitled

    Abstract: No abstract text available
    Text: PPJX138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V SOT-563 350mA Current Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology


    Original     		PDF PPJX138K OT-563 350mA 2011/65/EU IEC61249 OT-563 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJX8806 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V 800mA Current SOT-563 Unit : inch mm Features  RDS(ON), VGS@4.5V,IDS@500mA=0.4Ω  RDS(ON), VGS@2.5V,IDS@300mA=0.7Ω  RDS(ON), VGS@1.8V,IDS@100mA=1.2Ω(typ)  Advanced Trench Process Technology


    Original     		PDF PPJX8806 800mA OT-563 500mA 300mA 100mA 2011/65/EU IEC61249 OT-563 MIL-STD-750,

    MOSFET IGNITION

    Abstract: NTMS4700NR2
    Text: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products In Brief . . . ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ


    Original     		PDF O-264 MOSFET IGNITION NTMS4700NR2

    022 463a

    Abstract: SOT563-6
    Text: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF NTZS3151P OT-563 NTSZ3151P/D 022 463a SOT563-6

    Untitled

    Abstract: No abstract text available
    Text: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP


    Original     		PDF NTZS3151P OT-563 NTZS3151P NTZS3151PT1G NTZS3151PT5G BRD8011/D.

    sot-563 MOSFET D1

    Abstract: No abstract text available
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm http://onsemi.com V(BR)DSS


    Original     		PDF NTZD3152P OT-563 sot-563 MOSFET D1

    NTZD5110NT1G

    Abstract: NTZD5110NT5G sot-563 MOSFET D1
    Text: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD5110N OT-563 NTZD5110N/D NTZD5110NT1G NTZD5110NT5G sot-563 MOSFET D1

    NTZS3151PT1G

    Abstract: NTZS3151PT5G NTZS3151P
    Text: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP


    Original     		PDF NTZS3151P OT-563 NTZS3151P/D NTZS3151PT1G NTZS3151PT5G NTZS3151P

    a950

    Abstract: No abstract text available
    Text: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ −20 V


    Original     		PDF NTZS3151P NTZS3151P/D a950

    NTZD3152PT1G

    Abstract: NTZD3152P NTZD3152PT5G
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD3152P OT-563 NTZD3152P/D NTZD3152PT1G NTZD3152P NTZD3152PT5G

    Untitled

    Abstract: No abstract text available
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTZD3152P OT-563 NTZD3152P/D

    NTZD5110NT1G

    Abstract: No abstract text available
    Text: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD5110N OT-563 NTZD5110N/D NTZD5110NT1G

    v sot-563 MOSFET

    Abstract: NTZS3151PT1G NTZS3151P NTZS3151PT5G
    Text: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ 120 mW @ −4.5 V


    Original     		PDF NTZS3151P OT-563 NTZS3151P/D v sot-563 MOSFET NTZS3151PT1G NTZS3151P NTZS3151PT5G

    v sot-563 MOSFET

    Abstract: dd 127 dd 127 d NTZD3152PT1G ON v sot-563 10-35* DIODE NTZD3152P tu marking NTZD3152PT5G
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm http://onsemi.com V(BR)DSS


    Original     		PDF NTZD3152P OT-563 NTZD3152P/D v sot-563 MOSFET dd 127 dd 127 d NTZD3152PT1G ON v sot-563 10-35* DIODE NTZD3152P tu marking NTZD3152PT5G

    Untitled

    Abstract: No abstract text available
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD3152P NTZD3152P/D

    Untitled

    Abstract: No abstract text available
    Text: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD5110N NTZD5110N/D

    ON v sot-563

    Abstract: v sot-563 MOSFET NTZS3151P NTZS3151PT1G NTZS3151PT5G
    Text: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP


    Original     		PDF NTZS3151P OT-563 NTZS3151P/D ON v sot-563 v sot-563 MOSFET NTZS3151P NTZS3151PT1G NTZS3151PT5G

    SOT563-6

    Abstract: NTZD3152P NTZD3152PT1G NTZD3152PT5G
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD3152P OT-563 NTZD3152P/D SOT563-6 NTZD3152P NTZD3152PT1G NTZD3152PT5G

    Untitled

    Abstract: No abstract text available
    Text: NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / −430 mA, with ESD protection, SOT−563 package. Features • • • • • • Leading Trench Technology for Low RDS on Performance High Efficiency System Performance Low Threshold Voltage ESD Protected Gate


    Original     		PDF NTZD3155C OT-563 NTZD3155C/D