UVA PHOTODIODE Search Results

uv sensor

Abstract: ultraviolet sensor SUN SENSOR uv photodiode
Contextual Info: Ultraviolet selective GaN based UV sensor GaN-UVA-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN

Contextual Info: EPD-280-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA - UVC UV glass SiC TO-5 / TO-18 Description High spectral sensitivity in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC, excellence stability on high irradiance Environmental

Contextual Info: EPD-360-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVA range 330 nm - 400nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,

Contextual Info: UV-Photodiodes EPD-280-0-0.3-L* Wavelength range Type Technology Case UVA - UVC UV glass with lens SiC TO-5 Description High spectral sensitivity by lens in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC 1,2 Responsivity 1 Applications Environmental technology, analytical techniques,

Contextual Info: PHOTONIC Gallium Nitride GaN , Ultra Violet (UVA) Photodiode Surface Mount Type PDU-G105A-SM DETECTORS INC. PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] Ø.095 [2.40] .126 [3.20] .075 [1.90]

SG01S-HT

Abstract: uv sensor silicon carbide SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •

SG01S-5

Abstract: silicon carbide SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness

Contextual Info: PHOTONIC Gallium Nitride GaN , Ultra Violet (UVA) Photodiode Type PDU-G101A DETECTORS INC. PACKAGE DIMENSIONS inch [mm] Ø.210 [5.35] 45° 2X Ø.017 [0.43] VIEWING ANGLE 61° CHIP CL .055 [1.40] QUARTZ WINDOW CAP (WELDED) Ø.118 [3.00] HEADER .100 [2.54]

uv photodiode

Abstract: uv sensor ultraviolet sensor datasheet AG28S uvb sensor uv sensor AG28S ultraviolet sensors AG38S-TO AG32S AG38S-SMD
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN

SIC01S-HT

Abstract: silicon carbide UV photodiode
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •

uv sensor

Abstract: ultraviolet sensor SUN SENSOR AG38S-SMD
Contextual Info: Ultraviolet selective GaN based UV sensor AG38S-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN

GUVA-S20ED

Abstract: GUVAS
Contextual Info: Ultraviolet selective GaN based UV sensor GUVA-S20ED AG38As-SMD-s Features • UVA selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN

ultraviolet sensor

Abstract: AG28S uv sensor AG28S uvc photodiode
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN

Contextual Info: PHOTONIC Gallium Nitride GaN , Ultra Violet (UVA) Photodiode Type PDU-G101A DETECTORS INC. PACKAGE DIMENSIONS inch [mm] Ø.210 [5.35] 45° 2X Ø.017 [0.43] VIEWING ANGLE 61° CHIP CL .055 [1.40] QUARTZ WINDOW CAP (WELDED) Ø.118 [3.00] HEADER .100 [2.54]

ceramo paste

Abstract: uv sensor ultraviolet sensor CO Sensor
Contextual Info: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness

ultraviolet sensor

Abstract: TR15 uv sensor SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor SG 01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material

SG01S

Abstract: uv sensor silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material

silicon carbide

Contextual Info: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material

uv photodiode SIC01L-18

Abstract: SIC01L-18 cree ultraviolet uv sensor
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material

UVA photodiode

Abstract: 4W-08 EPD360
Contextual Info: Photodiode EPD-360-0-0.3-1 10.05.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-A clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVA range 330 nm - 400 nm , mounted in hermetically sealed TO-39 package with clear

silicon carbide

Contextual Info: 8OWUDYLROHW VHOHFWLYH 6L& EDVHG 89 VHQVRU 6*66 HDWXUHV • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material

uv photodiode

Abstract: AG38S-TO ultraviolet sensor
Contextual Info: Ultraviolet selective GaN based UV sensor AG38S-TO Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for UV consumer-applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN • TO-18 metal package with 0,076 mm2 active chip area

uva LED

Contextual Info: ENFIS QUATTRO Mini Array UVA 375nm The latest in ultra bright, chip on board, LED lattice arrays. Compact, single colour spot source. Features Mounted array for simple incorporation High power useable light Inbuilt monitoring / control • Array mounted on connectorized PCB

uv flame sensor

Abstract: ultraviolet sensor SG01 FLAME SENSOR UV SG01M uv sensor silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01M – Lens Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area