Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.
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UTD410
OT-223
UTD410
O-252
UTD410L-TN3-R
UTD410G-TN3-R
UTD410L-TN3-T
UTD410G-TN3-T
UTD410L-AA3-R
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UTD410 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON SOT-223 The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.
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Original
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PDF
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UTD410
OT-223
UTD410
O-252
UTD410L-TN3-R
UTD410G-TN3-R
UTD410L-TN3-T
UTD410G-TN3-T
UTD410L-AA3-R
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UTD410
Abstract: UTD410-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.
|
Original
|
PDF
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UTD410
UTD410
UTD410L
UTD410-TN3-R
UTD410L-TN3-R
UTD410-TN3-T
UTD410L-TN3-T
O-252
UTD410-TN3-R
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