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    UT34 Search Results

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    UT34 Price and Stock

    XP Power ECM40UT34

    AC/DC CONVERTER 3.3V 5V 12V 40W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECM40UT34 Box 73 1
    • 1 $59.27
    • 10 $59.27
    • 100 $49.7902
    • 1000 $49.7902
    • 10000 $49.7902
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    Mouser Electronics ECM40UT34 8
    • 1 $59.27
    • 10 $55.71
    • 100 $49.79
    • 1000 $49.79
    • 10000 $49.79
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    Newark ECM40UT34 Bulk 1
    • 1 $59.27
    • 10 $55.71
    • 100 $49.79
    • 1000 $49.79
    • 10000 $49.79
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    RS ECM40UT34 Bulk 22 Weeks 1
    • 1 $59.86
    • 10 $53.88
    • 100 $53.88
    • 1000 $53.88
    • 10000 $53.88
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    TME ECM40UT34 1
    • 1 $61.79
    • 10 $59.92
    • 100 $50.56
    • 1000 $50.56
    • 10000 $50.56
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    Avnet Abacus ECM40UT34 29 Weeks 48
    • 1 -
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    Neutron USA ECM40UT34 8
    • 1 $144.48
    • 10 $144.48
    • 100 $144.48
    • 1000 $144.48
    • 10000 $144.48
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    Riedon UT3-4RB2

    RES AXL 4W 4 OHM 0.1% T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UT3-4RB2 Reel 2,000
    • 1 -
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    • 10000 $1.29958
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    XP Power ECM60UT34

    AC/DC CONVERTER 3.3V 5V 12V 60W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECM60UT34 Box 48
    • 1 -
    • 10 -
    • 100 $60.97021
    • 1000 $60.97021
    • 10000 $60.97021
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    Mouser Electronics ECM60UT34
    • 1 $67.74
    • 10 $63.68
    • 100 $56.9
    • 1000 $56.9
    • 10000 $56.9
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    Newark ECM60UT34 Bulk 48
    • 1 -
    • 10 -
    • 100 $56.9
    • 1000 $56.9
    • 10000 $56.9
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    RS ECM60UT34 Bulk 22 Weeks 50
    • 1 -
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    • 100 $56.9
    • 1000 $56.9
    • 10000 $56.9
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    TME ECM60UT34 96
    • 1 -
    • 10 -
    • 100 $58.1
    • 1000 $58.1
    • 10000 $58.1
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    Riedon UT3-44K2J1

    RES AXL 4W 44.2K 5% T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UT3-44K2J1 Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.29958
    Buy Now

    XP Power ECM100UT34

    AC/DC CONVERTER 3.3V 5V 12V 80W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECM100UT34 Box 40
    • 1 -
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    • 100 $149.8705
    • 1000 $149.8705
    • 10000 $149.8705
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    Mouser Electronics ECM100UT34
    • 1 -
    • 10 -
    • 100 $149.87
    • 1000 $149.87
    • 10000 $149.87
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    Newark ECM100UT34 Bulk 40
    • 1 -
    • 10 -
    • 100 $139.88
    • 1000 $139.88
    • 10000 $139.88
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    RS ECM100UT34 Bulk 22 Weeks 50
    • 1 -
    • 10 -
    • 100 $139.88
    • 1000 $139.88
    • 10000 $139.88
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    TME ECM100UT34 80
    • 1 -
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    • 100 $117
    • 1000 $117
    • 10000 $117
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    UT34 Datasheets (229)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UT3401 Unisonic Technologies P-CHANNEL ENHANCEMENT MODE Original PDF
    UT3401-AE3-R Unisonic Technologies P-CHANNEL ENHANCEMENT MODE Original PDF
    UT3-402RF Riedon Resistor Wirewound 402 OHM 1% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-402RFTR Riedon Resistor Wirewound 402 OHM 1% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3-402RJ Riedon Resistor Wirewound 402 OHM 5% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-402RJTR Riedon Resistor Wirewound 402 OHM 5% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3403 Unisonic Technologies Power MOSFET Original PDF
    UT3403-AE3-R Unisonic Technologies Power MOSFET Original PDF
    UT3-40K2F Riedon Resistor Wirewound 40K2 1% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-40K2FTR Riedon Resistor Wirewound 40K2 1% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3-40K2J Riedon Resistor Wirewound 40K2 5% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-40K2JTR Riedon Resistor Wirewound 40K2 5% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3-40R2F Riedon Resistor Wirewound 40.2 OHM 1% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-40R2FTR Riedon Resistor Wirewound 40.2 OHM 1% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3-40R2J Riedon Resistor Wirewound 40.2 OHM 5% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-40R2JTR Riedon Resistor Wirewound 40.2 OHM 5% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3-412RF Riedon Resistor Wirewound 412 OHM 1% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-412RFTR Riedon Resistor Wirewound 412 OHM 1% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT3-412RJ Riedon Resistor Wirewound 412 OHM 5% 4W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT3-412RJTR Riedon Resistor Wirewound 412 OHM 5% 4W 20PPM AXIAL Thru-Hole T/R Original PDF
    ...

    UT34 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode 244

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original
    UT3409 UT3409 UT3409L-AE2-R UT3409G-AE2-R UT3409L-AE3-R UT3409G-AE3-R OT-23-3 OT-23 QW-R502-244 diode 244 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    UT3403 UT3403 UT3403L-AE2-R UT3403G-AE2-R UT3403L-AE3-R UT3403G-AE3-R OT-23-3 OT-23 QW-R502-145 PDF

    UT347

    Abstract: Microsemi micronote series 050 UT362 UT242
    Text: UT236 UT347, UT249 UT363, UT251 UT364 and UT261 UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.


    Original
    UT236 UT347, UT249 UT363, UT251 UT364 UT261 UT268 T4-LDS-0289, UT347 Microsemi micronote series 050 UT362 UT242 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages.


    Original
    UT3413 UT3413 UT3413L UT3413-AE3-R UT3413L-AE3-R OT-23 QW-R502-159 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a


    Original
    UT3414 UT3414 OT-23 UT3414L UT3414G UT3414-AE3-R QW-R502-248 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    UT3403 UT3403 UT3403G-AE2-R UT3403G-AE3-R OT-23-3 OT-23 QW-R502-145 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    UT3413 UT3413 UT3413G-AE2-R UT3413G-AE3-R OT-23-3 OT-23 QW-R502-159 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in


    Original
    UT3414 UT3414 UT3414G-AE3-R OT-23 QW-R502-248 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT3418 UT3418 UT3418G-AE3-R OT-23 QW-R502-226 PDF

    diode marking 226

    Abstract: diode BY 226 all diodes ratings UT3418L UT3418
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT3418 UT3418 UT3418L UT3418G UT3418-AE3-R UT3418L-AE3-R UT3418G-AE3-R QW-R502-226 diode marking 226 diode BY 226 all diodes ratings UT3418L PDF

    DO15

    Abstract: UT347 1.7218 UR20S lM9433 DO-15
    Text: Standard Recovery Rectifiers Part Number REC JANTX1N5622U JANTXV1N4249 JANTXV1NS622 JANTXV1N5622 RL107 S1M UT347 UT363 UT364 USSS UT249 UT242 UT244 UT24S UT247 1N5391 1N5391GP 1N5392 1N5392GP UT251 1N5393 1N5393GP UT252 1N5394 1NS394GP 1N5395 1N539SGP UT254


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT3404 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE M OSFET ̈ DESCRI PT I ON The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    UT3404 UT3404 UT3404L-AE3-R UT3404G-AE3-R OT-23 QW-R502-146 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT3409 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use


    Original
    UT3409 UT3409 UT3409L-AE2-R UT3409G-AE2-R UT3409L-AE3-R UT3409G-AE3-R OT-23-3 OT-23 QW-R502-244 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in


    Original
    UT3414 UT3414 UT3414L-AE3-R UT3414G-AE3-R OT-23 QW-R502-248 PDF

    diode marking 226

    Abstract: diode BY 226
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R OT-23 QW-R502-226 diode marking 226 diode BY 226 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT3404 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original
    UT3404 UT3404 UT3404L UT3404-AE3-R UT3404L-AE3-R OT-23 QW-R502-146 PDF

    diode BY 226

    Abstract: diode marking 226
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT3418 UT3418 UT3418L UT3418-AE3-R UT3418L-AE3-R OT-23 QW-R502-226 diode BY 226 diode marking 226 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3458 Power MOSFET 4.1A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 6 5 The UTC UT3458 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and low gate charge. This device can


    Original
    UT3458 UT3458 OT-26 UT3458L-AG6-R UT3458G-AG6-R QW-R502-578 PDF

    UT3409

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product


    Original
    UT3409 UT3409 1111UT3409L UT3409G QW-R502-244 PDF

    UT3404L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    UT3404 UT3404 UT3404L-AE3-R UT3404G-AE3-R OT-23 QW-R502-146 UT3404L PDF

    32A marking sot-23

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a


    Original
    UT3414 UT3414 OT-23 UT3414L UT3414G UT3414-AE3-R UT3414L-AE3-R UT3414G-AE3-R QW-R502-248 32A marking sot-23 PDF

    UT3419G

    Abstract: UT3419
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419G is a P-ch enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original
    UT3419 UT3419G UT3419G-AE3-R OT-23 QW-R502-391 UT3419 PDF

    marking 340G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3400 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS ON and low gate charge. This device can be operated with 2.5V low gate voltage.


    Original
    UT3400 UT3400 UT3400G-AE3-R OT-23 QW-R502-371 marking 340G PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    UT3401Z UT3401Z UT3401ZG-AE3-R OT-23 QW-R502-163 PDF