Untitled
Abstract: No abstract text available
Text: US1J-Q US1J-Q Ultrafast Switching Surface Mount Silicon Rectifier Diodes AEC-Q101 Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage (AEC-Q101) Version 2013-10-21 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type
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AEC-Q101)
DO-214AC
UL94V-0
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Untitled
Abstract: No abstract text available
Text: US1J-Q US1J-Q Ultrafast Switching Surface Mount Silicon Rectifier Diodes AEC-Q101 Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage (AEC-Q101) Version 2013-12-04 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type
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AEC-Q101)
DO-214AC
UL94V-0
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catalog diodes ultra fast 10a 600v
Abstract: DIODES FAST catalog
Text: Home | Profile | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1J product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV
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DO-214AC
100nS
80K/Ctn;
catalog diodes ultra fast 10a 600v
DIODES FAST catalog
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general semiconductor diode marking ug
Abstract: No abstract text available
Text: US1A-M3, US1B-M3, US1D-M3, US1G-M3, US1J-M3, US1K-M3, US1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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PDF
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J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
general semiconductor diode marking ug
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BPC817B
Abstract: BPC-817 TNY279GN J117 DO-214AC 1.5KE-200A 2n2 1kv CAPR508 CAPR508-381X1016X1168 C4622
Text: F2_220VAC F1_220VAC J11-6 J11-7 F3 125mA DO-214AC DIODE_GS1D D24 DO-214AC D25 DIODE_GS1D DO-214AC DO-214AC FUSE_202_SERIES D23 DIODE_GS1D D22 DIODE_GS1D + 2 1 C47 22u 400V CAPELEC_D12.5_P5 C42 2n2 1KV CAPR508-381X1016X1168 U10 TNY279GN DO-214AC D26 US1J R102
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220VAC
J11-6
J11-7
125mA
DO-214AC
CAPR508-381X1016X1168
BPC817B
BPC-817
TNY279GN
J117
DO-214AC
1.5KE-200A
2n2 1kv
CAPR508
CAPR508-381X1016X1168
C4622
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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PDF
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
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MIL-STD-202,
DS16008
US1M spice
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ES1D-13-F
Abstract: US1J-13-F ES1C-13-F US1B-13-F US1K-13-F US1G-13-F ES1G ES1A-13-F ES1B-13-F ES1G-13-F
Text: Certificate of Compliance Company Name: Diodes Inc. Company Address: 3050 E. Hillcrest Drive, Westlake Village, CA Manufacturer Part Number MPN & Description: ES1A-13-F ES1B-13-F ES1C-13-F ES1D-13-F ES1G-13-F US1A-13-F US1B-13-F US1D-13-F US1G-13-F US1J-13-F
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ES1A-13-F
ES1B-13-F
ES1C-13-F
ES1D-13-F
ES1G-13-F
US1A-13-F
US1B-13-F
US1D-13-F
US1G-13-F
US1J-13-F
ES1D-13-F
US1J-13-F
ES1C-13-F
US1B-13-F
US1K-13-F
US1G-13-F
ES1G
ES1A-13-F
ES1B-13-F
ES1G-13-F
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Untitled
Abstract: No abstract text available
Text: US1A-M3, US1B-M3, US1D-M3, US1G-M3, US1J-M3, US1K-M3, US1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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J-STD-020C
DS16008
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US1J
Abstract: US1A
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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J-STD-020C
DS16008
US1J
US1A
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US1M MARKING CODE
Abstract: US1M spice marking c y US1D US1J US1A-13 marking us1m
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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J-STD-020C
DS16008
US1M MARKING CODE
US1M spice
marking c y
US1D
US1J
US1A-13
marking us1m
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US1M spice
Abstract: US1x
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability
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J-STD-020C
MIL-STD-202,
DS16008
US1M spice
US1x
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2013-10-14 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5
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DO-214AC
UL94V-0
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-10-09 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5
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UL94V-0
DO-214AC
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-06-05 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5
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UL94V-0
DO-214AC
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-08-17 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5
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UL94V-0
DO-214AC
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2006-04-18 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5 ± 0.2 0.15 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung
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DO-214AC
UL94V-0
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2011-02-28 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.5 Repetitive peak reverse voltage
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DO-214AC
UL94V-0
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us1j diode
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2006-04-18 Nominal current – Nennstrom 2.2 2.1 ± 0.2 ± 0.1 5± 0.2 0.15 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung
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DO-214AC
UL94V-0
us1j diode
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us1jm
Abstract: US1G
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2010-08-12 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.6 Repetitive peak reverse voltage
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DO-214AC
UL94V-0
us1jm
US1G
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DIODE US1J
Abstract: Diode marking us1j marking of US1J diode us1jf US1J
Text: DISCRETE SEMICONDUCTORS SMA US1 series Ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Jan 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SMA US1 series FEATURES DESCRIPTION
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DO-214AC
DIODE US1J
Diode marking us1j
marking of US1J diode
us1jf
US1J
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Untitled
Abstract: No abstract text available
Text: US1A – US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak
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SMA/DO-214AC,
MIL-STD-750,
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