general semiconductor diode marking ug
Abstract: No abstract text available
Text: US1A-M3, US1B-M3, US1D-M3, US1G-M3, US1J-M3, US1K-M3, US1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
general semiconductor diode marking ug
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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Original
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PDF
|
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: US1A-M3, US1B-M3, US1D-M3, US1G-M3, US1J-M3, US1K-M3, US1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
18-Jul-08
GENERAL SEMICONDUCTOR MARKING UJ SMA
vishay MARKING UM SMA
US1M MARKING CODE
us1m vishay
JESD22-B102
J-STD-002
us1g vishay
RECTIFIER marking UG 08
marking us1j Vishay
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US1A
Abstract: No abstract text available
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
US1A
|
Untitled
Abstract: No abstract text available
Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
11-Mar-11
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US1A-US1M
Abstract: us1m vishay US1M Lite US1G diode DIODE US1J us1m diode us1j diode
Text: US1A–US1M Vishay Lite–On Power Semiconductor 1.0A Surface Mount Ultra–Fast Rectifier Features D D D D Glass passivated die construction Diffused junction Ultra–fast recovery time for high efficiency Low forward voltage drop, high current capability, and low power loss
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Original
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PDF
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D-74025
24-Jun-98
US1A-US1M
us1m vishay
US1M Lite
US1G diode
DIODE US1J
us1m diode
us1j diode
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: RECTIFIER marking UG 08 us1d US1A
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •
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Original
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PDF
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DO-214AC
J-STD-020C
UL-94V-0
J-STD-002B
JESD22-B102D
50mVp-p
05-Aug-05
GENERAL SEMICONDUCTOR MARKING UJ SMA
RECTIFIER marking UG 08
us1d
US1A
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Untitled
Abstract: No abstract text available
Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
|
PDF
|
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
|
PDF
|
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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JESD22-B102
Abstract: J-STD-002 US1M
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
11-Mar-11
JESD22-B102
J-STD-002
US1M
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
03-Jul-06
GENERAL SEMICONDUCTOR MARKING UJ SMA
US1J-E3/5AT
us1m datasheet
us1m vishay
GENERAL SEMICONDUCTOR MARKING UM
US1J-E3/61T
JESD22-B102D
J-STD-002B
us1g vishay
RECTIFIER marking UG 08
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GENERAL SEMICONDUCTOR MARKING uj sma
Abstract: US1A
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
|
PDF
|
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
GENERAL SEMICONDUCTOR MARKING uj sma
US1A
|
|
|
Untitled
Abstract: No abstract text available
Text: US1A thru US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: US1A thru US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
GENERAL SEMICONDUCTOR MARKING uj sma
Abstract: JESD22-B102D J-STD-002B
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
08-Apr-05
GENERAL SEMICONDUCTOR MARKING uj sma
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)
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Original
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PDF
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DO-214AC
50mVp-p
02-Jul-02
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)
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Original
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PDF
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DO-214AC
50mVp-p
20-Mar-03
GENERAL SEMICONDUCTOR MARKING UJ SMA
GENERAL SEMICONDUCTOR us1j
vishay MARKING UM SMA
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: us1jhe3 us1m datasheet vishay MARKING UM SMA JESD22-B102D J-STD-002B US1A
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
08-Apr-05
GENERAL SEMICONDUCTOR MARKING UJ SMA
us1jhe3
us1m datasheet
vishay MARKING UM SMA
JESD22-B102D
J-STD-002B
US1A
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GENERAL SEMICONDUCTOR MARKING uj sma
Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)
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Original
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PDF
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DO-214AC
50mVp-p
18-Feb-04
GENERAL SEMICONDUCTOR MARKING uj sma
GENERAL SEMICONDUCTOR MARKING UD
Device Marking Code UB UD UG UJ UK UM
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
|
PDF
|
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
GENERAL SEMICONDUCTOR MARKING UJ SMA
us1j-e3
US1M MARKING CODE
us1jhe3
MARKING CODE TL DO-214AC
JESD22-B102
J-STD-002
US1J-E361T
us1m vishay
PREFERRED PACKAGE CODE um
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Untitled
Abstract: No abstract text available
Text: US1A-US1M Vishay Lite-On Power Semiconductor 1.0A Surface Mount Ultra-Fast Rectifier Features • G lass passivated die construction • Diffused junction • U ltra -fa s t recovery tim e fo r high efficiency • Low forw ard voltage drop, high current capability, and low pow er loss
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OCR Scan
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PDF
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D-74025
24-Jun-98
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MARKING FZ
Abstract: US1A-US1M
Text: U S 1A -U S 1M VISHAY 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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OCR Scan
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PDF
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MIL-STD-202,
DS16008
MARKING FZ
US1A-US1M
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