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Bristol Electronics	UPF1030P		37			1 - 10 - 100 - 1000 - 10000 -	Get Quote

UPF1030 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPF1030		Cree	LDMOS FETs in Class AB Operation Cellular to 1 GHz		Original	PDF
UPF1030F		Cree	30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS		Original	PDF
UPF1030F		Cree	FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UPF1030P		Cree	FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UPF1030 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J216 Abstract: UPF1030 J2-13 Text: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,	Original	PDF	UPF1030 30dBc J216 UPF1030 J2-13
ultrarf Abstract: J216 Text: UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers	Original	PDF	UPF1030 30dBc UPF1030F UPF1030P ultrarf J216
J216 Abstract: UPF1030P UPF1030 UPF1030F J156 J-146 Text: UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	PDF	UPF1030 30dBc UPF1030F UPF1030P UPF1030 350mA J216 UPF1030P UPF1030F J156 J-146
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b