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    UPD4 Search Results

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    UPD4 Price and Stock

    Rochester Electronics LLC UPD44325092BF5-E40-FQ1

    QDR SRAM, 4MX9, 0.45NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD44325092BF5-E40-FQ1 Bulk 5
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    • 100 $61.8
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    Rochester Electronics LLC UPD46184182BF1-E40-EQ1

    DDR SRAM, 1MX18, 0.45NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD46184182BF1-E40-EQ1 Bulk 7
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    Rochester Electronics LLC UPD44165182BF5-E33-EQ3

    QDR SRAM, 1MX18, 0.45NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD44165182BF5-E33-EQ3 Bulk 8
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    Rochester Electronics LLC UPD44646363AF5-E25-FQ1

    IC SRAM 72MBIT PARALLEL 165PBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD44646363AF5-E25-FQ1 Bulk 4
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    • 10 $77.53
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    Rochester Electronics LLC UPD44324182BF5-E33-FQ1-A

    DDR SRAM, 2MX18, 0.45NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD44324182BF5-E33-FQ1-A Bulk 5
    • 1 -
    • 10 $61.8
    • 100 $61.8
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    Find more UPD4 price and stock on Findchips.com

    UPD4 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPD4000BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4001BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4002 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4002BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4006BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4011 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4011BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4011C NEC NAND Gates Scan PDF
    UPD4012BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4012C NEC NAND Gates Scan PDF
    UPD4013 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4013BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4014BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4015 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4015BC Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    UPD4016 NEC 2048 x 8 Bit Static NMOS RAM Scan PDF
    UPD4016-1 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4016-2 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    UPD4016-3 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ...

    UPD4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 PDF

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C PDF

    Untitled

    Abstract: No abstract text available
    Text: UPD43256BGX-B12-EJA 1/2 IL16 ∗∗∗∗∗ C-MOS 256k (32kx8) BIT STATIC RAM –TOP VIEW– OE A11 A9 A8 A13 WE A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC VDD (+2.7 to 5.5V) GND NC A0-14 ; ADDRESS INPUTS I/O1-18 ; DATA INPUTS/OUTPUTS


    Original     		UPD43256BGX-B12-EJA 32kx8) A0-14 I/O1-18 262144BIT PDF

    Untitled

    Abstract: No abstract text available
    Text: UPD482445G5-60 1/2 IL08D C-MOS 4M-BIT DUALPORT GRAPHICS BUFFER —TOP VIEW— 30 1 VDD DT/OE IN 2 3 GND 70 SC 69 SE IN 31 IN 32 33 GND 68 34 SIO0 I/O 4 67 SIO15 W0/IO0 I/O 5 66 W15/IO15 SIO1 W1/IO1 I/O I/O 6 7 8 VDD I/O 65 SIO14 39 64 W14/IO14 40 I/O W15/IO15


    Original     		UPD482445G5-60 IL08D SIO15 W15/IO15 SIO14 W14/IO14 W13/IO13 W12/IO12 PDF

    Untitled

    Abstract: No abstract text available
    Text: UPD4713ACX IL08 * MOS INTEGRATED CIRCUIT RS-232 LINE DRIVER / RECEIVER - TOP VIEW - 1 V DD +5V C 4 + 24 2 C1 + GND 23 3 Vcc C 4 – 22 4 C1 – Vss 21 20 D CON STBY 5 300Ω D IN1 6 300Ω D IN2 7 300Ω D IN3 8 R OUT1 9 R OUT2 10 R OUT3 11 5kΩ


    Original     		UPD4713ACX RS-232 SPAC300â PDF

    Untitled

    Abstract: No abstract text available
    Text: UPD4564163G5-A10B-9JF IL08 C-MOS 64 M 1 M WORD x 16-BIT x 4 -BIT DRAM —TOP VIEW— 1 VDD DQ0 2 3 QVDD GND 54 53 DQ15 QGND 52 INPUT A0 - A13 CAS CKE CLK DQ1 4 51 DQ14 CS DQ2 5 50 DQ13 LDQM 6 QGND QVDD 49 DQ3 7 48 DQ12 DQ4 8 47 DQ11 9 QVDD QGND 46 DQ5 10


    Original     		UPD4564163G5-A10B-9JF 16-BIT PDF

    STATIC RAM 6264

    Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15
    Text: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:


    OCR Scan     		28PIN uP04368CR/LA-20 UP04464G-12 UPD4464G-12L UPD4464G-15 uPD4464G-15L STATIC RAM 6264 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L PDF

    TA1024

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. //PD 43501 1,024-C H A N N E L TIM E DIVISION SW ITCH Description Features The/uPD43501 is a tim e-sw itch device designed fo r use in a high-perform ance digital com m unications net­ work. Features include a tim e-switch function by


    OCR Scan     		uPD43501 16-bit 10-bit PD43501 64-word TA1024 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-452AB644 2M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AB644 is a 2,097,152 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 16 M SDRAM : ,uPD4516821 are assembled.


    OCR Scan     		MC-452AB644 64-BIT MC-452AB644 uPD4516821 MC-452AB644-A ntL44 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,uPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).


    OCR Scan     		16M-BIT 16M-WORD uPD4416001 PD4416001 54-pin PD4416001G 5-A12-9JF 5-A15-9JF PD4416001G5-C12-9JF PDF

    nec 14t tv

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / uPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan     		uPD42S17800 uPD4217800 /UPD42S17800, PD42S17800 28-pin /JPD42S17800-60, pPD42S17800-70, VP15-207-2 b427525 nec 14t tv PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The ,uPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		32K-WORD 36-BIT uPD431536L 768-word 36-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    OCR Scan     		PD442012L-X 128K-WORD 16-BIT uPD442012L-X PD442012L-X 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jU P D 4 5 2 5 6 4 4 1 , 4 5 2 5 6 8 4 1 , 4 5 2 5 6 1 6 3 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access


    OCR Scan     		256M-bit uPD45256441 216x4x4, 608x8x4, 304x16x4 54-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 3 1 5 3 2 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		31532L 32K-WORD 32-BIT uPD431532L 768-word 32-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		32K-WORD 36-BIT uPD431636L 768-word 36-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		MPD432232L 64K-WORD 32-BIT uPD432232L 536-word 32-bit PDF

    0829A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		UPD434004A PD434004A 32-pin PD434004ALE-17 PD434004ALE-20 008iC PD434004A PD434004A. jUPD434004ALE 0829A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random -access memory, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.


    OCR Scan     		PD4564323 64M-bit uPD4564323 864-bit 86-pin S86G5-50-9JH M14376EJ1V0DS00 PD4564323G5: PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The ,uPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks


    OCR Scan     		jUPD4811650 256K-WORD 32-BIT uPD4811650 100-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		UPD434004AL PD434004AL 32-pin PD434004ALLE-A17 PD434004ALLE- PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-458CD641LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD641 LS is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ,uPD4564163 are assembled.


    OCR Scan     		MC-458CD641LS 64-BIT MC-458CD641 uPD4564163 M13348X) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		32K-WORD 32-BIT uPD431532L 768-word 32-bit S100GF-65-8ET PD431532L. PD431532LGF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic


    OCR Scan     		128M-bit 133MHz uPD45128441-A75 45128841-A75 45128163-A75 728-bit 54-pin M14378EJ1V0DS00 uPD45128xxx uPD45128xxxG5 PDF