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    UPA81 Price and Stock

    California Eastern Laboratories (CEL) UPA810T-A

    RF TRANS 2 NPN 12V 4.5GHZ SOT363
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    California Eastern Laboratories (CEL) UPA812T-A

    RF TRANS 2 NPN 10V 7GHZ SOT-363
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    California Eastern Laboratories (CEL) UPA810T-T1

    RF TRANS 2 NPN 12V 4.5GHZ 6-SO
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    California Eastern Laboratories (CEL) UPA814T-T1

    RF TRANS 2 NPN 6V 9GHZ 6-SO
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    Rochester Electronics LLC UPA811T-T1-A

    RF TRANS 2 NPN 10V 8GHZ SOT-363
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    UPA81 Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPA81 NEC Semiconductor Selection Guide 1995 Original PDF
    uPA81 NEC Semiconductor Selection Guide Original PDF
    UPA81 NEC Silicon Darlington transistor array Scan PDF
    UPA810 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    uPA810 NEC Semiconductor Selection Guide Original PDF
    UPA810T California Eastern Laboratories Npn Silicon High Frequency Transistor Original PDF
    UPA810T NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
    UPA810T NEC NPN silicon high frequency transistor. Original PDF
    uPA810T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226 Original PDF
    UPA810T-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 4.5GHZ SOT363 Original PDF
    UPA810T-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA810TC NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    uPA810TC NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M Original PDF
    UPA810TC-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    UPA810TF NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA810TF NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
    uPA810TFB-T1 NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold Original PDF
    uPA810TGB NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold Original PDF
    UPA810T-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=4.5GHZ SOT-363 Original PDF
    UPA810T-T1 California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    UPA81 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE688

    Abstract: S21E UPA814T UPA814T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA814TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		OT-363 UPA814TC UPA814TC NE688 50GHz UPA814TC-T1, 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz


    Original     		UPA812T NE681 UPA812T UPA812T-T1-A 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR UPA811T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    Original     		NE680 UPA811T UPA811T UPA811T-T1-A 24-Hour PDF

    8003* transistor

    Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz


    Original     		UPA814T NE688 UPA814T UPA814T-T1, 24-Hour 8003* transistor UPA814T-T1 S21E transistor C 110 transistor f 20 nf PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		OT-363 UPA810TC UPA810TC NE856 UPA810TC-T1, 24-Hour PDF

    NE856

    Abstract: S21E UPA810TC UPA810TC-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		UPA810TC OT-363 UPA810TC NE856 UPA810TC-T1, 24-Hour S21E UPA810TC-T1 PDF

    UPA814TC

    Abstract: UPA814TC-T1 NE688 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA814TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		UPA814TC OT-363 UPA814TC NE688 UPA814TC-T1, 24-Hour UPA814TC-T1 S21E PDF

    NE856

    Abstract: S21E UPA810T UPA810TF chip die npn transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm hight • HIGH COLLECTOR CURRENT: IC MAX = 100 mA


    Original     		UPA810TF OT-363 UPA810TF NE856 UPA810TF-T1, 24-Hour S21E UPA810T chip die npn transistor PDF

    NE688

    Abstract: S21E UPA814T UPA814T-T1 UPA814T-T1-A
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		UPA814T NE688 UPA814T S21E UPA814T-T1 UPA814T-T1-A PDF

    OF transistor 13

    Abstract: ultra low noise NPN transistor
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • PACKAGE OUTLINE S06 (Top View) SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package 2.1 ± 0.1 LOW NOISE FIGURE:


    Original     		UPA810T NE856 UPA810T UPA810T-T1 UPA810T-A UPA810T-T1-A OF transistor 13 ultra low noise NPN transistor PDF

    UPA810T-T1-A

    Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:


    Original     		UPA810T NE856 UPA810T UPA810T-T1-A S21E UPA810T-A UPA810T-T1 ultra low noise NPN transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour PDF

    ultra low noise NPN transistor

    Abstract: NE680 npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T UPA811T-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


    Original     		UPA811T NE680 UPA811T UPA811T-T1, 24-Hour ultra low noise NPN transistor npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T-T1 PDF

    NE680

    Abstract: S21E UPA811T UPA811T-T1 UPA811T-T1-A
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		UPA811T NE680 UPA811T S21E UPA811T-T1 UPA811T-T1-A PDF

    613 GB 123 CT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S


    OCR Scan     		uPA812T 2SC4227) /xPA812T 613 GB 123 CT PDF

    nec d 588

    Abstract: NEC 2532 NEC 2504
    Text: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.


    OCR Scan     		uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • UPA811T PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    OCR Scan     		NE680 UPA811T UPA811T UPA811T-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 2 . 1 + 0.1 LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz -


    OCR Scan     		NE688 UPA814T UPA814T UPA814T-T1, 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:


    OCR Scan     		NE681 UPA812T UPA812T UPA812T-T1, 24-Hour PDF

    NEC 2501 re 443

    Abstract: LS 1691 BM je 371 Transistor
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD PACKAGE DRAW INGS /xPA813T has built-in 2 transistors which were developed for UHF. (Unit: mm) FEATURES • 2.1 ±0.1 High fT 1,25±0.1


    OCR Scan     		uPA813T 2SC4570) /xPA813T jiPA813T-T1 NEC 2501 re 443 LS 1691 BM je 371 Transistor PDF

    low power rf transistor T

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View LOW NOISE FIGURE: IMF = 1 .9 dB TYP at 2 GHz 2 .1 1 0 . 1 HIGH GAIN: - 1 . 2 5 ± 0.1-


    OCR Scan     		NE680 UPA811T UPA811T UPA811T-T1 24-Hour low power rf transistor T PDF

    TI 9023 IC data

    Abstract: 2SC4226 APPLICATION NOTES
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS


    OCR Scan     		uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD PACKAGE DRAWINGS FEATURES • • Low Voltage O peration, Low Phase Distortion (U n it: m m ) Low Noise


    OCR Scan     		uPA814T 2SC5193) PDF