UN2114
Abstract: UN2214 UNR2114 UNR2214 XP04314 XP4314
Text: Composite Transistors XP04314 XP4314 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR2214(UN2214) + UNR2114(UN2114) • Absolute Maximum Ratings Parameter
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XP04314
XP4314)
UNR2214
UN2214)
UNR2114
UN2114)
UN2114
UN2214
XP04314
XP4314
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UNR2114
Abstract: XP01114
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01114 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ■ Basic Part Number • UNR2114 x 2 Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
XP01114
UNR2114
UNR2114
XP01114
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01114 Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2114 x 2 Parameter
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2002/95/EC)
XP01114
UNR2114
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UN2114
Abstract: UN2214 UNR2114 UNR2214 XN04314 XN4314
Text: Composite Transistors XN04314 XN4314 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2214 (UN2214) + UNR2114 (UN2114)
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XN04314
XN4314)
UNR2214
UN2214)
UNR2114
UN2114)
UN2114
UN2214
UNR2114
UNR2214
XN04314
XN4314
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unr211
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
unr211
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04114 (XN4114) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN04114
XN4114)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04314 (XN4314) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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2002/95/EC)
XN04314
XN4314)
UNR2214
UN2214)
UNR2114
UN2114)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04114 Silicon PNP epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XP04114
UNR2114
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04314 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50)
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UP04314
UNR2214
UNR2114
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN06114 XN6114 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 5° 1 0.65±0.15 3 0.4±0.2 6 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package
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XN06114
XN6114)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04314 (XP4314) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP04314
XP4314)
UNR2214
UN2214)
UNR2114
UN2114)
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UNR2114
Abstract: UNR2213 XP03390
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For digital circuits M Di ain sc te on na tin nc ue e/ d 0.20±0.05
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XP03390
UNR2114
UNR2213
XP03390
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UNR2114
Abstract: XN01114G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01114G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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2002/95/EC)
XN01114G
UNR2114
UNR2114
XN01114G
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UN2114
Abstract: UNR2114 XN06114 XN6114
Text: Composite Transistors XN06114 XN6114 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 5° 1 0.65±0.15 3 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number
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XN06114
XN6114)
UN2114
UNR2114
XN06114
XN6114
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UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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UNR2114
Abstract: XP06114
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06114 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
XP06114
UNR2114
UNR2114
XP06114
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UNR2114
Abstract: UNR2214 XN04314G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04314G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For switching circuits/digital circuits • Features
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2002/95/EC)
XN04314G
UNR2114
UNR2214
XN04314G
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UNR2114
Abstract: XP06114
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06114 Silicon PNP epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XP06114
UNR2114
UNR2114
XP06114
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UN2114
Abstract: UN2214 UNR2114 UNR2214 UP04314
Text: Composite Transistors UP04314 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead 5˚ • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating
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UP04314
UN2114
UN2214
UNR2114
UNR2214
UP04314
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UNR2119
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2119
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
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UNR2114
Abstract: UNR2213 XP03390
Text: Composite Transistors XP03390 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)
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XP03390
UNR2213
UNR2114
UNR2114
UNR2213
XP03390
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