ultrasonic radar
Abstract: ultrasonic bond diagram radar circuit ultrasonic amplifier circuit diagram LMA411 ultrasonic phased array bonding
Text: 8.5-14GHz PHEMT Amplifier Filtronic LMA411 Solid State Features • • • • • • • • • • 2dB Typical Noise Figure 18dB Typical Gain 19dBm Saturated Output Power 12dB Input/Output Return Loss Typical 8.5-14GHz Frequency Bandwidth +6 Volts Single Bias Supply
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5-14GHz
LMA411
19dBm
624mmX1
LMA411
14GHz.
17dBm
ultrasonic radar
ultrasonic bond
diagram radar circuit
ultrasonic amplifier circuit diagram
ultrasonic phased array bonding
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ultrasonic radar
Abstract: LMA219B MIL-HDBK-263 ultrasonic phased array
Text: LMA219B LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 7 GHz to 11 GHz Frequency Band 1.4 dB Noise Figure 19 dB Gain 14 dBm Output Power at Saturation +3 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA219B is a low noise PHEMT amplifier which operates from 7 to
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LMA219B
LMA219B
11GHz.
MIL-STD-1686
MIL-HDBK-263.
ultrasonic radar
MIL-HDBK-263
ultrasonic phased array
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LMA246
Abstract: ultrasonic radar pHEMT transistor 360 MIL-HDBK-263 Filtronic LMA246
Text: LMA246 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 9 GHz to 14 GHz Frequency Band 2.2 dB Noise Figure 25.5 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to
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LMA246
LMA246
14GHz.
17dBm
MIL-STD-1686
MIL-HDBK-263.
ultrasonic radar
pHEMT transistor 360
MIL-HDBK-263
Filtronic LMA246
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ultrasonic radar
Abstract: LMA411 MIL-HDBK-263 ultrasonic phased array low noise amplifier MMIC
Text: LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that
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LMA411
LMA411
14GHz.
17dBm
MIL-STD-1686
MIL-HDBK-263.
ultrasonic radar
MIL-HDBK-263
ultrasonic phased array
low noise amplifier MMIC
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LMA246
Abstract: Filtronic LMA246
Text: LMA246 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 9 GHz to 14 GHz Frequency Band 2.6 dB Noise Figure 25.5 dB Gain 16 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to
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LMA246
LMA246
14GHz.
14dBm
MIL-STD-1686
MIL-HDBK-263.
Filtronic LMA246
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p-hemt
Abstract: No abstract text available
Text: LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 17 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that
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LMA411
LMA411
14GHz.
14dBm
MIL-STD-1686
MIL-HDBK-263.
p-hemt
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ultrasonic phased array
Abstract: s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND-4028 HPND4038
Text: HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description Features The HPND-4028 and 4038 beam lead PIN diodes are designed for low capacitance, low resistance, and fast switching at microwave frequencies. These characteristics are achieved at low bias levels for minimal power
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HPND-4028,
HPND-4038
HPND-4028
5967-6157E
AV01-0594EN
ultrasonic phased array
s-parameter s11 s12 s21
ablestik 958
s-parameter file of HPND-4028
HPND-4038
hpnd pin 0.01 pF
4028 BE
HPND4028
HPND4038
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HPND-4028 pin diode
Abstract: hpnd pin 0.01 pF
Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)
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HPND-4028
HPND-4038
5965-8878E
5967-6157E
HPND-4028 pin diode
hpnd pin 0.01 pF
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HPND-4028 pin diode
Abstract: No abstract text available
Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)
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HPND-4028
HPND-4038
5965-8878E
5967-6157E
HPND-4028 pin diode
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HPND-4028 pin diode
Abstract: hpnd pin 0.01 pF HPND-4028 ultrasonic phased array HPND4028 HPND4038 HPND-4038 4028 BE
Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)
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HPND-4028
HPND-4038
HPND-4028
5965-8878E
5967-6157E
HPND-4028 pin diode
hpnd pin 0.01 pF
ultrasonic phased array
HPND4028
HPND4038
HPND-4038
4028 BE
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier 2.0 - 6.5 GHz MAAM26100 V3 Features • • • • • Die Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output Description M/A-COM’s MAAM26100 is a GaAs MMIC two
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MAAM26100
50-ohm
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MA4BPS101
Abstract: MA4BPS301 PIN diode MACOM SPICE model MA4BPS201 Three bond 09CP
Text: PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features • • • • • Chip Layout Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires
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MA4BPS101,
MA4BPS201,
MA4BPS301
MA4BPS101
MA4BPS301
PIN diode MACOM SPICE model
MA4BPS201
Three bond
09CP
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HPND-4018
Abstract: s-parameter s11 s12 s21 10000 s-parameter s11 s12 s21 ablestik 958 beam lead PIN diode hp 4028 ultrasonic phased array ultrasonic welding HPND-4028 HPND-4038
Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7)
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HPND-4018
HPND-4028
HPND-4038
HPND-4018,
HPND-4018
s-parameter s11 s12 s21 10000
s-parameter s11 s12 s21
ablestik 958
beam lead PIN diode
hp 4028
ultrasonic phased array
ultrasonic welding
HPND-4028
HPND-4038
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MAAM26100
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier 2.0 - 6.5 GHz MAAM26100 V4 Features • • • • • • Die Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant Description M/A-COM’s MAAM26100 is a GaAs MMIC two
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MAAM26100
50-ohm
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Untitled
Abstract: No abstract text available
Text: Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Agilent’s AMMC- 5618 6−20 GHz
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AMMC-5618
AMMC-5618-W10
AMMC-5618-W50
5989-0532EN
5989-3210EN
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Untitled
Abstract: No abstract text available
Text: Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Agilent’s AMMC- 5618 6−20 GHz
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AMMC-5618
AMMC-5618
AMMC-5618-W10
AMMC-5618-W50
5989-0532EN
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AMMC-5618
Abstract: AMMC-5618-W10 AMMC-5618-W50
Text: Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Agilent’s AMMC- 5618 6−20 GHz
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AMMC-5618
AMMC-5618
AMMC-5618-W10
AMMC-5618-W50
5989-0532EN
AMMC-5618-W10
AMMC-5618-W50
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MAAM26100
Abstract: No abstract text available
Text: MAAM26100 GaAs MMIC Power Amplifier 2.0 - 6.5 GHz Rev. V7 Die Features • Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant Description
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MAAM26100
MAAM26100
50-ohm
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Untitled
Abstract: No abstract text available
Text: AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Features Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an
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AMMC-5618
AMMC-5618-W10
AMMC-5618-W50
5989-3927EN
AV02-0070EN
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AMMC-5618-W10
Abstract: AMMC-5618-W50 DS21 AMMC-5618
Text: AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Description Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an efficient two-stage amplifier designed to be used as a cascadable intermediate gain block for EW applications. In communication systems, it can be used as a LO buffer,
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AMMC-5618
AMMC-5618-W10
AMMC-5618-W50
5989-3927EN
AMMC-5618-W10
AMMC-5618-W50
DS21
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Untitled
Abstract: No abstract text available
Text: NEC GaAs S-BAND LOW NOISE AMPLIFIER CHIP FEATURES UPG122P GAIN vs. FREQUENCY LOW NOISE FIGURE: NF £ 2 .2 dB @ f = 2.7 to 4.2 G Hz HIGH POWER GAIN: G p = 24 dB @ f = 2.7 to 3 .4 G H z DESCRIPTION The U PG 122P GaAs amplifier has very low noise character
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UPG122P
105B-1.
UPG122P
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Untitled
Abstract: No abstract text available
Text: W hpl H EW LETT mUHM P A C K A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND 4028 HPND 4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec • Low R esistance at Low Bias
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HPND-4028
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HPND-4028 pin diode
Abstract: No abstract text available
Text: What mLliM HEWLETT* PACKARD Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0nsec • Low Resistance at Low Bias
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HPND-4018
HPND-4028
HPND-4038
HPND-4028 pin diode
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Ic D 1708 ag
Abstract: No abstract text available
Text: warn HEWLETT %SKM PA CK A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low C apacitance 0.025 pF Maximum a t 1 MHz G uaranteed Min./Max. • F ast Sw itching 2.0 nsec • Low R esistan ce a t Low B ias
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HPND-4018
HPND-4028
HPND-4038
HPND-4018,
Ic D 1708 ag
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