ULTRA FAST RECOVERY TIME DIODE 20NS Search Results

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)

1SS344

Abstract: TD236
Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)

1SS344

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)

1SS344

Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)

1SS344

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)

TOSHIBA "ULTRA HIGH SPEED" DIODE

Abstract: 1SS344 TD236
Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)

Contextual Info: TO SHIBA 1SS344 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. U nit in mm + 0.5 2 . 5 - 0 .3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) •

Contextual Info: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)

1SS344

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)

Contextual Info: ఎਈऔ૵਌! Switching Diode FHD16 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用 SOT-23

FHD4148

Contextual Info: ఎਈऔ૵਌! Switching Diode FHD4148 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application超高速開關應用 SOT-23

ultra fast recovery time diode 20ns

Contextual Info: ఎਈऔ૵਌! Switching Diode FHD99 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application超高速開關應用 SOT-23

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)

H9 MARKING CODE SOT23

Abstract: H9 sot 23 MARKING H9 h9 marking h9 sot23
Contextual Info: 1SS344 Surface Mount Schottky Planar Diode SOT-23 Features — Fast reverse recovery time:trr=20ns typ . — Low forward voltage:VF=0.50V (typ). — High average forward current:IO=0.5A(max.) Applications — Ultra high speed switching application. Dimensions in inches and (millimeters)

400v 3a ultra fast recovery diode

Abstract: SF3A400H Ultrafast Recovery diode 20ns
Contextual Info: SF3A400H Semiconductor Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features y Low forward voltage drop 1 y Ultrafast reverse recovery time : trr Typ. =20ns y High speed switching 1 2 y Low power loss and High efficiency 2 1 : Cathode 2 : Anode

Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811DLCC3 • Ultra Fast Reverse Recovery • Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching power supplies applications • Space Level and High-Reliability Screening Options Available

LE17

Abstract: MIL-PRF19500 QR217
Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N5809D3A / 1N5809D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications

Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N5809D3A / 1N5809D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications

LE17

Abstract: MIL-PRF19500 QR217 e-MELF
Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811D3A / 1N5811D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications

D-5B layout

Abstract: LE17 MIL-PRF19500 QR217 marking D3B e-MELF
Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811D3A / 1N5811D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

sony flyback transformer

Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
Contextual Info: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————

1a6h

Abstract: COLOR MARKING CODE ON DIODE SF1A600H
Contextual Info: SF1A600H Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  Low forward voltage drop 1  Ultrafast reverse recovery time : trr=30ns Max.  High speed switching 2  Low power loss and High efficiency 1 2 Pin Configuration

3A6H

Contextual Info: SF3A600H Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  Low forward voltage drop 1  Ultrafast reverse recovery time: trr=30ns Max.  High speed switching 2  Low power loss and High efficiency 1 2 Pin Configuration Pin 1: Cathode