Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJU36B1WDPF 360V - 20A - Dual Diode Ultra Fast Recovery Diode R07DS1135EJ0300 Rev.3.00 Dec 06, 2013 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)
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RJU36B1WDPF
R07DS1135EJ0300
PRSS0004AE-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJU36B2WDPF 360V - 40A - Dual Diode Ultra Fast Recovery Diode R07DS1136EJ0300 Rev.3.00 Dec 06, 2013 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)
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RJU36B2WDPF
R07DS1136EJ0300
PRSS0004AE-C
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ceramic disk capacitor
Abstract: tantalum capacitor markings aluminum capacitor NTC 15D capacitor ceramic capacitor electrolyte datasheet carbon variable resistor CECC 30301 SCHEMATIC POWER SUPPLY WITH IGBTS fets
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . In Powe r Supplie s capacitors aluminum capacitors engineering solutions w w w. v i s h a y. c o m SEMICONDUCTORS Rectifiers FETs Schottky single, dual Standard, Fast and Ultra-Fast Recovery (single, dual)
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VMN-PL0359-1008
ceramic disk capacitor
tantalum capacitor markings
aluminum capacitor
NTC 15D
capacitor ceramic
capacitor electrolyte datasheet
carbon variable resistor
CECC 30301
SCHEMATIC POWER SUPPLY WITH IGBTS
fets
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ceramic disc 103 aec capacitors
Abstract: dipped tantalum capacitor markings A684K20X7RF K223K15X7RF A473K15X8RF dipped radial tantalum capacitor markings Mono-Axial ceramic disc 100 aec capacitors K105K20X7RF K682K15X7RH
Text: V ISHAY INTERTECHN O L O G Y , INC . capacitors w w w. v i s h a y. c o m Selector Guide Multilayer ceramic dipped axial and radial capacitors for automotive applications SEMICONDUCTORS Rectifiers Schottky single, dual Standard, Fast, and Ultra-Fast Recovery
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VMN-SG2148-0905
ceramic disc 103 aec capacitors
dipped tantalum capacitor markings
A684K20X7RF
K223K15X7RF
A473K15X8RF
dipped radial tantalum capacitor markings
Mono-Axial
ceramic disc 100 aec capacitors
K105K20X7RF
K682K15X7RH
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corrosion inhibitor
Abstract: Hitachi DSA00281
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R2
MBM600F17D
000cycles)
50Hwhole
corrosion inhibitor
Hitachi DSA00281
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-F73-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R4
MBM600F17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R4
MBM600F17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F72-PM datasheet flow BOOST 1200 V / 40 A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-F72-PM
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications
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V23990-P629-L63-PM
200V/50A
V23990-P629-L63
D7-D10
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Untitled
Abstract: No abstract text available
Text: APTGU180DU120 Dual common source PT IGBT Power Module VCES = 1200V IC = 180A @ Tc = 80°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff
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APTGU180DU120
50kHz
50/60Hz
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Untitled
Abstract: No abstract text available
Text: APTGU60DU120T Dual common source PT IGBT Power Module VCES = 1200V IC = 60A @ Tc = 80°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff
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APTGU60DU120T
50kHz
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Untitled
Abstract: No abstract text available
Text: APTGU140DU60T Dual common source PT IGBT Power Module VCES = 600V IC = 140A @ Tc = 80°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff
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APTGU140DU60T
200kHz
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Untitled
Abstract: No abstract text available
Text: V23990-P623-L82-PM flow BOOST 0 650V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 650V IGBT and 650V Stealth Si boost diode ● Antiparallel IGBT protection diode with high current
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V23990-P623-L82-PM
50V/50A
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Hitachi DSA0045
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-06014 Dual IGBT Module MBM 1200E17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING 1.FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-06014
1200E17D
000cycles)
Hitachi DSA0045
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Untitled
Abstract: No abstract text available
Text: APTGU30DSK120T3 Dual Buck chopper PT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 18 Features • Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge
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APTGU30DSK120T3
200kHz
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L43-PM datasheet flow BOOST 0 1200 V / 50 A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current
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V23990-P629-L43-PM
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Untitled
Abstract: No abstract text available
Text: APTGU40DSK60T3 Dual Buck chopper PT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 18 Features • Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge
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APTGU40DSK60T3
200kHz
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency
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10-FZ06NBA110FP-M306L28
00V/110A
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DG3157
Abstract: INTERSIL Cross Reference Search dg403bdy DG211BDJ MAX32xx MAX333ACWP ADG201ABQ semiconductors cross reference DG442LDY DG303bdy
Text: CROSS-REFERENCE A nalog IC Pro duc ts w w w. v i s h a y. c o m I N T EG R AT E D C I R C U I T S V I S H AY I N T E R T E C H N O L O G Y, I N C . SEMICONDUCTORS RECTIFIERS Schottky single, Dual Standard, Fast, and Ultra-Fast Recovery (single, Dual) Bridge
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VMN-MS6328-0911
DG3157
INTERSIL Cross Reference Search
dg403bdy
DG211BDJ
MAX32xx
MAX333ACWP
ADG201ABQ
semiconductors cross reference
DG442LDY
DG303bdy
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Untitled
Abstract: No abstract text available
Text: APTGU30DSK60T3 Dual Buck chopper PT IGBT Power Module VCES = 600V IC = 30A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Features • Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff
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APTGU30DSK60T3
200kHz
jun02
APTGU30DSK60T
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MBM150GR12A
Abstract: Hitachi DSA0047
Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M150GR12A-0
MBM150GR12A
50A/1200V,
Weight230g
MBM150GR12A
Hitachi DSA0047
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xawv
Abstract: No abstract text available
Text: Dual IGBT Module Spec.No.IGBT-SP-05003 R8 P1 MBM1200E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-05003
MBM1200E17D
000cycles)
-40mission
xawv
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