ULM PHOTONICS GMBH Search Results

ULM Photonics

Abstract: 10Gbps-VCSEL 850 VCSEL ULM VCSEL 850 nm ULM Photonics GmbH
Contextual Info: V3 850 nm multimode 1 x n, 10 Gbps VCSEL for high speed data transmission • • • • Warning: High speed up to 10 Gb/s Low current and voltage Lowest power consumption Single devices and linear arrays Laser radiation, avoid exposure to beam. Class 3B laser product,

ULM Photonics

Abstract: ULM 1000 1506 Laser wavelength 1506 nm 11 1506 89081 ULM Photonics GmbH
Contextual Info: 20% 10% 0% Array 1506 6 3 4 2 2 1 32 VCSELs λ = 968 nm 2 4 6 8 Spectral output power 10 dB / div 30% 4 8 Voltage (V) Conversion efficiency 40% Optical output power (mW) ULM 4x8 array characteristic 10 Array 1506 Laser 11 I = 3 mA 955 960 965 970 975 980

ULM Photonics

Abstract: 10Gbps-VCSEL ULM Photonics GmbH
Contextual Info: V2 850 nm multimode 1 x n, 10 Gbps VCSEL for high speed data trans • • • • • Warning: High speed up to 10 Gb/s High reliability Low current and voltage Lowest power consumption Single devices and linear arrays Laser radiation, avoid exposure to beam.

ULM Photonics

Abstract: laser 850 nm ULM Photonics GmbH
Contextual Info: V3 850 nm multimode 2,5 / 3,125 / 5 Gbps NxM VCSEL array for high speed data transmission • High speed up to 5 Gb/s • Lowest threshold current • Lowest power Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard.

850-nm-multimode-VCSEL

Abstract: VCSEL 850 nm ULM Photonics vcsel 850 vcsel nm 850 VCSEL ULM VCSEL 40G ULM Photonics GmbH
Contextual Info: V2 850 nm multimode VCSEL 2,5 / 3,125 / 5 Gbps for high speed data transmission • High speed up to 5 Gb/s • Lowest threshold current • Lowest power consumption Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard.

ULM Photonics

Abstract: VCSEL array ULM Photonics GmbH
Contextual Info: Monolithic VCSEL array for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8 2.0 ELECTRO-OPTICAL-CHARACTERISTICS, CHIP FLIP-CHIP MOUNTED

VCSEL array, 850nm flip

Abstract: ULM Photonics Monolithic-VCSEL-array VCSEL array, 850nm, flip chip VCSEL array, 850nm vcsel array ULM Photonics GmbH
Contextual Info: V3 Monolithic VCSEL array to FLIP CHIP for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8

Contextual Info: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam ‹ Built-in ESD protection structure ‹ High reliability, >105 h @ 50°C, 2 mA ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER

ULM850-OM-TN-S46XOP

Abstract: ULM Photonics E2000 T046 TO46 ULM850-OM-TN-S46FOP SM 850nm laser vcsel SM 850nm laser vcsel ulm ULM Photonics GmbH
Contextual Info: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam ‹ Built-in ESD protection structure ‹ High reliability, >105 h @ 50°C, 2 mA ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER

ULM Photonics

Abstract: ULM852-01-TN-S46FTT laser diode 6 GHz ULM Photonics precautions ntc thermistor E2 ULM780-01-TN-S46FOP
Contextual Info: Single Mode VCSEL 780±1 nm TO46 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor ‹ Narrow linewidth ‹ 2nm tunability with TEC ‹ High performance and reliability ‹ ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT

Contextual Info: 10 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 10 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated PARAMETER

Contextual Info: 14 Gbps PIN Photodiode 1x4 1x12 Chip GaAs PIN Photodiode  Low bias voltage, low dark current  High speed modulation up to 14 Gbps  Suitable for wire bond and flipchip process  E.g. for FDR InfiniBand data transmission  Preliminary ELECTRO-OPTICAL CHARACTERISTICS

ULMPIN-14-TT-N0101U

Contextual Info: 14 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 Low bias voltage, low dark current 1 High speed modulation up to 14 Gbps 1 E.g. for FDR InfiniBand data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated

Contextual Info: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE

Contextual Info: 4 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 4.25 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Responsivity Active area diameter SYMBOL UNITS

Contextual Info: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization at high output power up to 1.4mW Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION

Contextual Info: Single mode & polarization VCSEL 850nm,TO46, 0.7mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE

vcsel SMD

Contextual Info: 12mW VCSEL 850nm SMD Package Vertical Cavity Surface-Emitting Laser 1 SMD package 1 12mW cw output power 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Prototype ELECTRO-OPTICAL CHARACTERISTICS SMD package

VCSEL-ULM850-14-TT-F

Contextual Info: 14 Gbps VCSEL 850 nm 1x4 1x12 chip Vertical Cavity Surface-Emitting Laser  Cathode on top side  Unsealed 85% r.H./85°C certified  Suitable for wirebond and flipchip process  Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip Temperature = 25°C unless otherwise stated.

ULM850-B2-PL-S46FZP

Contextual Info: Single mode & polarization VCSEL 850nm,TO46, 2.0mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary

ULM850-PM-TN-S46XZP

Contextual Info: Low cost Single Mode VCSEL 850nm,TO46, 1.0mW Ideal circular gaussian beam 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated

vcsel SMD

Abstract: ULM855-G2-TN-SSMDTL
Contextual Info: Single Mode VCSEL 850nm SMD package 1 without encapsulation 1 ESD protection 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated PARAMETER Emission wavelength SYMBOL 1R UNITS

R/ULM850-05-TT-C0101D

Contextual Info: 5 Gbps VCSEL 850 nm 1x1/1x4/12 chip    For flip chip stud bump and wire bond Unsealed 85% r.H./85°C certified 1, 4, or 12 channel array configuration INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS

ULM852-01-TN-S46FTT

Contextual Info: 852±1/ ±10 nm Single Mode VCSEL TO46 & TEC Vertical Cavity Surface-Emitting Laser 1 internal TEC, Thermistor, ESD protection diode 1 Narrow linewidth 1 2nm tunability with TEC 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE