912 MOSFET
Abstract: DOC-70 AN601
Text: VISHAY SILICONIX Power MOSFETs Application Note 912 Power MOSFET in UIS/Avalance Applications By Kandarp Pandya Inductive loads require adequate attention in electronic control circuits, since otherwise they can lead to unclamped inductive switching UIS or avalanche conditions, which
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SQM110N04-03
AN601
22-Dec-08
912 MOSFET
DOC-70
AN601
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RFP70N06
Abstract: AN9322 AVALANCHE TRANSISTOR
Text: Harris Semiconductor No. AN9322.1 Harris Power MOSFET January 1996 A Combined Single Pulse and Repetitive UIS Rating System Author: Wallace D. Williams the +25oC line, the application is beyond the UIS rating of the device and the user stands a risk of device failure. If the
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AN9322
1-800-4-HARRIS
RFP70N06
AVALANCHE TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN4034SSS ADVANCE INFORMATION 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance
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DMN4034SSS
AEC-Q101
DS32106
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PDF
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SiR642DP
Abstract: SIR642
Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see
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SiR642DP
SiR642DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR642
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see
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Original
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SiR642DP
SiR642DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance 68mΩ @ VGS= 10V 5.6A
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Original
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DMN6068SE
AEC-Q101
DS32033
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PDF
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Untitled
Abstract: No abstract text available
Text: DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS • 100% Unclamped Inductive Switch (UIS) test in production Low Gate Input Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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DMJ7N70SK3
AEC-Q101
DS36907
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see
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Original
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SiR642DP
SiR642DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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g4406ls
Abstract: g4406
Text: DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • 100% Unclamped Inductive Switch (UIS) test in production Low On-Resistance 11mΩ @ VGS = 10V 10.3A Low Input Capacitance 9.3A Fast Switching Speed
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Original
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DMG4406LSS
DS35539
g4406ls
g4406
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance 68m @ VGS= 10V 5.6A
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DMN6068SE
DS32033
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PDF
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SQJ469EP
Abstract: No abstract text available
Text: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ469EP
AEC-Q101
2002/95/EC
SQJ469EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQJ469EP
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ964EP
AEC-Q101
2002/95/EC
SQJ964EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ964EP
AEC-Q101
2002/95/EC
SQJ964EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ461EP
AEC-Q101
2002/95/EC
SQJ461EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQS420EN
AEC-Q101
2002/95/EC
SQS420EN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQS400EN
AEC-Q101
2002/95/EC
SQS400EN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQ1421EEH
AEC-Q101
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQS420EN
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQ1421EEH
AEC-Q101
2002/95/EC
OT-363
SC-70
SC-70
SQ1421EEH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2318ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2318ES*
OT-23
SQ2318ES-T1-GE3
11-Mar-11
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PDF
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SQJ401EP
Abstract: No abstract text available
Text: SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ401EP
AEC-Q101
2002/95/EC
SQJ401EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQJ401EP
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PDF
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67401
Abstract: No abstract text available
Text: SQ3469EV www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ3469EV
AEC-Q101
2002/95/EC
SQ3469EV-T1-GE3
11-Mar-11
67401
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ963EP
AEC-Q101
2002/95/EC
SQJ963EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SQJ469ep
Abstract: No abstract text available
Text: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ469EP
AEC-Q101
2002/95/EC
SQJ469EP-T1-GE3
11-Mar-11
SQJ469ep
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PDF
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