UHF AMPLIFIER DESIGN TRANSISTOR Search Results

222259116641

Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Contextual Info: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4

uhf amplifier design

Abstract: 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN419/D SEMICONDUCTOR APPLICATION NOTE AN419 UHF AMPLIFIER DESIGN USING DATA SHEET DESIGN CURVES INTRODUCTION k [y12 y21 + Re y12y21 ] Freescale Semiconductor, Inc. GL = The design of UHF amplifiers usually involves a particular

Contextual Info: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.

UT-090C-25

Abstract: BLF888 DVB-T Schematic dvb-t transmitters DVB-T transistor amplifier DVB-T2 DVB-T Terrestrial Schematic C4532X7R1E475MT020U dvb-t transmitter AN10869
Contextual Info: AN10869 Broadband DVB-T UHF power amplifier with the BLF888 Rev. 01 — 25 May 2010 Application note Document information Info Content Keywords BLF888, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888.

article.

Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
Contextual Info: From May 2003 High Frequency Electronics Copyright 2003 Summit Technical Media, LLC High Frequency Design BROADBAND DESIGN Broadband VHF/UHF Amplifier Design Using Coaxial Transformers By C. G. Gentzler and S.K. Leong Polyfet RF Devices T he desire of the

2 x 50W amplifier

Abstract: UHF TRANSISTOR 2SC3218B 50w transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration

2SC3217

Abstract: 2SC321
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3217 Silicon NPN power UHF transistor 2SC3217 permits he design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration

UHF TRANSISTOR

Abstract: 2SC3217
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3217 Silicon NPN power UHF transistor 2SC3217 permits he design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration

2 x 50W amplifier

Abstract: 2SC3218B uhf power transistor 50W 2SC3218
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration

300w amplifier

Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
Contextual Info: RES Ltd. specializes in the design and manufacturing of FM, VHF and UHF amplifier pallets and systems for analog radio/television broadcast and digital television broadcast. All RES products, including the standard items inside, are available exclusively from Richardson Electronics.

AN562

Abstract: SD1565
Contextual Info: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).

TRANSISTOR 7059

Abstract: AN562 SD1565
Contextual Info: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).

chebyshev 3dB

Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

chebyshev 3dB

Abstract: transistor 81L AN561 SD1563 amplifier 250W
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

Contextual Info: AN11325 2-way Doherty amplifier with BLF888A Rev. 01 — 14 November 2013 Application note Document information Info Content Keywords BLF888A, Doherty, DVB-T, UHF Abstract This document gives a description and measurement results of a 2-way Doherty amplifier using 2  BLF888A UHF LDMOS transistors.

Contextual Info: NXP 50 V LDMOS RF power transistors BLF881x and BLF888A Digital broadcasting at its best Operating between 470 and 860 MHz, the BLF881 driver and BLF888A (final) LDMOS transistor line-ups deliver one-octave wideband operation, excellent ruggedness, very high output power

BLF642

Contextual Info: NXP LDMOS RF power transistors BLF88x, BLF879P & BLF642 RF power UHF/DVB-T broadcasting at its best Supporting all broadcast amplifier designs in the 470 to 860 MHz band, this complete family of transistors delivers up to one octave wideband operation combined with field-proven ruggedness,

Contextual Info: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

TSDF02830YL

Contextual Info: TSDF02830YL VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

TSDF02830YR

Contextual Info: TSDF02830YR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

Contextual Info: TSDF02830Y VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

Contextual Info: TSDF02830Y Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit VY CW Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL • Two differently optimized amplifiers in a

TSDF02830YR

Abstract: analog tv Tuners
Contextual Info: TSDF02830YR VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

bs 3535

Abstract: TSDF02830Y
Contextual Info: TSDF02830Y VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL