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    UF 407 DIODE Search Results

    UF 407 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    UF 407 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74HCxx

    Abstract: IC-WJ-SO8 hcmos 74hcxx UF 407 Diode G003 G008 G010 iC-WJZ 470 uF 25 v Capacitor nF-47
    Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    PDF D-55294 74HCxx IC-WJ-SO8 hcmos 74hcxx UF 407 Diode G003 G008 G010 iC-WJZ 470 uF 25 v Capacitor nF-47

    Untitled

    Abstract: No abstract text available
    Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    WJ 176

    Abstract: G003 G008 G010 90 NF block diagram 74HCXX IC
    Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    NTS353

    Abstract: NTS350 NTS358 NTS359
    Text: 350 Watts NTS350 Series Total Power: Input Voltage: # of Outputs: 200-350 Watts 85-264 VAC 120-300 VDC Single Electrical Specs Input Input range Frequency Inrush current Efficiency EMI filter 85-264 VAC; 120-300 VDC 47-440 Hz 38 A max., cold start @ 25°C


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    PDF NTS350 EN55022 EN6100-3-2 NTS353 NTS358 NTS359

    AN8610

    Abstract: UF 407 Diode HIP2060AS1 HIP2060 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W
    Text: HIP2060 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.


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    PDF HIP2060 HIP2060 AN8610 UF 407 Diode HIP2060AS1 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W

    loss of neutral monitor

    Abstract: NTS353 4600 fet CISPR22 NTS350 VDE0878PT3 NTS355
    Text: Embedded Power for Business-Critical Continuity Rev. 03.14.07 NTS350 Series 1 of 3 NTS350 Series RoHS 350 Watts Total Power: Input Voltage: # of Outputs: 200 - 350 Watts 85 - 264 VAC 120 - 300VDC Single Electrical Specifications Special Features • • •


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    PDF NTS350 300VDC EN6100-3-2 loss of neutral monitor NTS353 4600 fet CISPR22 VDE0878PT3 NTS355

    13MM

    Abstract: PH1819-4N v6 4n diode
    Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point


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    PDF PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode

    12v class d amplifier 70W

    Abstract: 25E03 HIP4080A 001-AA transistor AHs
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS


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    PDF HIP2060 HIP2060 1-800-4-HARRIS 12v class d amplifier 70W 25E03 HIP4080A 001-AA transistor AHs

    12v class d amplifier 70W

    Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V


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    PDF HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP4080A HIP2060AS2 AN8610 1350P

    12v class d amplifier 70W

    Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V


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    PDF HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP2060AS2 HIP4080A Transistor S1D

    204T250

    Abstract: atheros P111 Atheros homeplug reference design bom Atheros L1 atheros l2 SSC-P111 intellon powerline networking p485 SSC P485 Atheros homeplug reference Intellon
    Text: SSC P485 Hardware Design Reference Table of Contents 1. Introduction .1 2. Application


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    BOB8 series

    Abstract: No abstract text available
    Text: Isolated DC-DC Converters BOB8 Series - 8 Watt BOTHHAND ENTERPRISE INC. Features Wide 2 : 1 Input Voltage Range 9~18V,18~36V,36~75V Remote On/Off Input / Output Isolation Voltage: 1.5K Vdc Extended Operating Temperature Range: -40°C to +85°C Output Short Circuit Protection:


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    PDF EN55022, BOB8-48S1. 0100211A BOB8 series

    75F04

    Abstract: 1KP4 74F04 74F541 HI5714 HI5721 ICL8069 folding amplifier oscilloscope pc harris ac step down converter
    Text: Harris Semiconductor No. AN9517 Harris Data Acquisition August 1995 Using the HI5714 Evaluation Board Author: Juan C. Garcia Features Assuming no interpolation were to be performed, the number of folding amplifiers necessary to implement an 8-bit conversion using a folding ratio of 16 would be DC at 16.


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    PDF AN9517 HI5714 HI5721 1-800-4-HARRIS 75F04 1KP4 74F04 74F541 HI5721 ICL8069 folding amplifier oscilloscope pc harris ac step down converter

    folding amplifier

    Abstract: schematics for a LA amplifier 74F04 74F541 HI5714 HI5721 ICL8069
    Text: No. AN9517 Application Note August 1995 Using the HI5714 Evaluation Board Author: Juan C. Garcia Features Assuming no interpolation were to be performed, the number of folding amplifiers necessary to implement an 8-bit conversion using a folding ratio of 16 would be DC at 16.


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    PDF AN9517 HI5714 HI5721 folding amplifier schematics for a LA amplifier 74F04 74F541 HI5721 ICL8069

    Lautsprecher LP

    Abstract: transistor gt 322 service-mitteilungen AC188K ac187k schiebe funkschau STRALSUND MP20A SF225
    Text: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N lE fe r a d io -television \ AUSGABE: Seite April 1-6 Aus der Sowjet-Union wird noch in diesem Jahr der TTEmpfänger " SIGNAL 601 " importiert. Es handelt sich um ein Gerät für den Empfang der Berei­


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    Untitled

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUIT KA7524 POWER FACTOR CONTROLLER The KA7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for desig­ ning on active power factor correction circuit. FEATURES • • • • •


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    PDF KA7524 KA7524 500mA KA7524/KA7524D KA7524D 100uF 1N4148 3300pF

    UF 407 Diode

    Abstract: power supply IRF830 APPLICATION 12G471 KA7524 M21 diode circuit diagram ballast 12v 450V 47UF zener c15 5t KA7524D Zener diode 1N4148
    Text: LINEAR INTEGRATED CIRCUIT KA7524 POWER FACTOR CONTROLLER The KA7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for desig­ ning on active power factor correction circuit. FEATURES • • • • •


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    PDF KA7524 KA7524 500mA KA7524/KA7524DDIP, 25--f-100Â KA7524D 7U414E IRF830 UF 407 Diode power supply IRF830 APPLICATION 12G471 M21 diode circuit diagram ballast 12v 450V 47UF zener c15 5t Zener diode 1N4148

    zener diode ST 4148

    Abstract: Zener Diode 4148 zener T 4148 FR-107 diode ZENER diode t 4148 zener diode 4148 circuit diagram 1n 4148 zener diode diode st 4148 diode 4937 T 4148 zener
    Text: KA7524 LINEAR INTEGRATED CIRCUIT a dip POWER FACTOR CONTROLLER The K A 7 5 2 4 provides the necessary features to im plem ent the E lectronic BALLAST control and S.M.P.S app licatio n for d e s ig ­ n ing on active pow e r fa cto r co rrectio n circuit. FEATURES


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    PDF KA7524 500mA A7524D 27ohm 330ohm 75ohm 10ohm 4700pF zener diode ST 4148 Zener Diode 4148 zener T 4148 FR-107 diode ZENER diode t 4148 zener diode 4148 circuit diagram 1n 4148 zener diode diode st 4148 diode 4937 T 4148 zener

    IS2076-E

    Abstract: No abstract text available
    Text: £8 HU977, CXA1977 10-Bit 20 MSPS A/D Converter February 1996 Features Description • Maximum Operating Speed. 20 MSPS Min The H11977, CXA1977 is an 10-bit 20 MSPS 2-step parallel A/D converter tor video signal processing. • R e s o lu tio n . 10-Bit


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    PDF HU977, CXA1977 10-Bit H11977, CXA1977 10-Bit 160mW 10MHz 1-800-4-HARRIS IS2076-E

    power transistor CV 203

    Abstract: rvb ah
    Text: iC-WD, iC-WDS if f if ll SWITCH-MODE DUAL 5V REGULATOR FEATURES APPLICATIONS ♦ Input voltage 8.30 36 Vdc ♦ Highly efficient step-down regulator ♦ Switching transistor and free-wheeling diode integrated ♦ Adjustment of the regulator cut-off current with external


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    PDF 100kHz 200mA/25mA power transistor CV 203 rvb ah

    sy 320 diode

    Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
    Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren


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    25E03

    Abstract: No abstract text available
    Text: HIP2060 fü HARRIS S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001A A ALTERNATE VERSIO N HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(QN) Max Per Transistor at VGS = 15V


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    PDF HIP2060 TS-001A HIP2060 100mJ 1-800-4-HARRIS 25E03

    Untitled

    Abstract: No abstract text available
    Text: EVALU ATIO N K IT FOR S A 1 3 /S A 1 4 PIN -O U T APÉK M I C f t O T E C H N O L O G Y EK10 HTTP://WW W.APEXMICROTECH.COM 800 INTRODUCTION A SSEM B LY This easy-to-use kit provides a platform for the evaluation of PW M am plifiers using the SA13 or SA14 pin-out configuration. It


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    PDF 546-APEX SA13/SA14 EK10U

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M a W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS ON = 0.110£1 • Total Dose • Single Event TO-254AA - M eets Pre-RAD Specifications to 100K RAD (Si)


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    PDF FSF250D, FSF250R O-254AA 1-800-4-HARRIS