Untitled
Abstract: No abstract text available
Text: SA03 SA03 P r o d uSA03 c t IInnnnoovvaa t i o n FFr roomm Pulse Width Modulation Amplifier FEATURES • WIDE SUPPLY RANGE—16-100V • 30A CONTINUOUS TO 60°C case • 3 PROTECTION CIRCUITS • ANALOG OR DIGITAL INPUTS • SYNCHRONIZED OR EXTERNAL OSCILLATOR
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RANGE--16-100V
TE9493
12-pin
45kHz
SA03U
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PZTA93
Abstract: PZTA92 2B025 SMD IC 2025
Text: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.
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2b025
PZTA92
PZTA93
OT-223)
PZTA92
PZTA93
SMD IC 2025
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C6V2 ST
Abstract: c5v6 st C9V1 ST BZV90 BZV90-C24 C5V1 ST
Text: • ^53^31 N AMER 002.5751 20b H A P X PHILIPS/DISCRETE b?E BZV90 SERIES D SILICON PLANAR VOLTAGE REGULATOR DIODES S ilicon planar voltage regulator diodes, in a SO T223 plastic envelope, intended fo r sta b iliza tio n applica tions in th ic k and th in -film circu its.
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BZV90
OT223
OT223.
00257S1
C6V2 ST
c5v6 st
C9V1 ST
BZV90-C24
C5V1 ST
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Untitled
Abstract: No abstract text available
Text: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS943/945/947
OT223
OT223)
BDS944/946/948.
BDS943
BDS945
BDS947cation
D034b3b
btS3T31
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