USA03 Search Results

Contextual Info: SA03 SA03 P r o d uSA03 c t IInnnnoovvaa t i o n FFr roomm Pulse Width Modulation Amplifier FEATURES • WIDE SUPPLY RANGE—16-100V • 30A CONTINUOUS TO 60°C case • 3 PROTECTION CIRCUITS • ANALOG OR DIGITAL INPUTS • SYNCHRONIZED OR EXTERNAL OSCILLATOR

PZTA93

Abstract: PZTA92 2B025 SMD IC 2025
Contextual Info: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.

C6V2 ST

Abstract: c5v6 st C9V1 ST BZV90 BZV90-C24 C5V1 ST
Contextual Info: • ^53^31 N AMER 002.5751 20b H A P X PHILIPS/DISCRETE b?E BZV90 SERIES D SILICON PLANAR VOLTAGE REGULATOR DIODES S ilicon planar voltage regulator diodes, in a SO T223 plastic envelope, intended fo r sta b iliza tio n applica­ tions in th ic k and th in -film circu its.

Contextual Info: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general