Untitled
Abstract: No abstract text available
Text: JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-363
BC847S
OT-363
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U
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MT3S20P
SC-62
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Untitled
Abstract: No abstract text available
Text: C21 POWER dielectric laboratories Ultra High Q, Porcelain, High Power High performance, compact high voltage capacitors for use in Power Amplifiers, Matching Networks and Filters. Part Number C 21 AH 202 J 1 U X L Product Code Size Code Laser Marking Optional
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500Vdc
300Vdc
200Vdc
100Vdc
1000Vdc
C21CF360
C21CF390
C21CF430
C21CF470
C21CF510
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MT3S20P
Abstract: No abstract text available
Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini
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MT3S20P
SC-62
MT3S20P
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HN3C14F
Abstract: No abstract text available
Text: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING
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HN3C14F
HN3C14F
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HN3C15F
Abstract: No abstract text available
Text: HN3C15F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 15F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING 6 5 4 Fl F» FI- Type Name
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HN3C15F
HN3C15F
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HN2C10FU
Abstract: No abstract text available
Text: TO SH IBA HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING
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HN2C10FU
HN2C10FU
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HN3C09FU
Abstract: No abstract text available
Text: TO SH IBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING
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HN3C09FU
N3C09FU
HN3C09FU
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HN2C12FU
Abstract: H123
Text: TO SH IBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING
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HN2C12FU
N2C12
HN2C12FU
H123
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Untitled
Abstract: No abstract text available
Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02
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CSA1162
CSA1162Y-3E
CSA1162GR
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BFW92
Abstract: No abstract text available
Text: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92
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BFW92
BFW92
D-74025
31-Oct-97
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Untitled
Abstract: No abstract text available
Text: 2SC4061K Transistor, NPN Features Dimensions U n its : mm • • • • available in SMT3 (SMT, SC-59) package package marking: 2SC4061K; AN^, where ★ is hEE code high breakdown voltage, BVCEo = 300 V small collector output capacitance 2SC4061K (SMT3)
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2SC4061K
SC-59)
2SC4061K;
2SC4061K
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TRANSISTOR 2SC
Abstract: ic MARKING FZ 2SC4061K T146 398-2 Transistor Marking C3
Text: 2SC4061K Transistor, NPN Features Dimensions U nits: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SC4061K; AN-*, where ★ is hFE code • • 2SC4061K (SMT3) high breakdown voltage, BVCeo = 300 V small collector output capacitance
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2SC4061K
SC-59)
2SC4061K;
0G14777
2SC4061K
76EflIitH
TRANSISTOR 2SC
ic MARKING FZ
T146
398-2
Transistor Marking C3
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Untitled
Abstract: No abstract text available
Text: f Z T S G S - T H O Ä T# is M S O N S03904 U i C T lt g « ! SMALL SIGNAL NPN TRANSISTOR Type Marking S03904 071 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPO SE AMPLIFIER AND
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S03904
S03904
OT-23
SC06960
OT-23
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MAR 641 TRANSISTOR
Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Text: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23
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BFR92A/BFR92AR
BFR92A
BFR92AR
26-Mar-97
26-Mar
MAR 641 TRANSISTOR
transistor MAR 543
MAR 737 ic
mar 727
1646 IC
28B SOT-23
of ha 741 ic
MAR 737
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TELEFUNKEN* U 413 B
Abstract: MAR 641 TRANSISTOR transistor MAR 439
Text: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T
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BFR96T
BFR96T
26-Mar-97
TELEFUNKEN* U 413 B
MAR 641 TRANSISTOR
transistor MAR 439
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BFR92a MARKING P2
Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Text: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23
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BFR92A/BFR92AR
BFR92A
BFR92AR
26-Mar-97
BFR92a MARKING P2
MAR 641 TRANSISTOR
sot-23 marking RIP
ha 1452
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code
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EHA07312
Q62702-G0041
OT-143
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking
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23b320
BFQ64
-F106T
OT-89
A23b35Q
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2SA1036K
Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Text: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA
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2SA1036K
2SA1577
SC-59)
SC-70)
2SA1577;
2SC2411K
2SC4097
2SA1036K
2SA1577
transistor surface mount to
T106
T146
transistor PNP
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marking AGs sot-23
Abstract: marking AGs sot23 ags marking n1a marking n1a sot23 marking code VN2106
Text: VN2106 VN2110 S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON Product marking for SOT-23: (max) TO-92 TO-236AB* 60V 4.0Q VN2106N3 - VN2106ND 100V 4.0C1 — VN2110K1 VN2110ND BV dqs
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VN2106
VN2110
OT-23:
VN2106N3
O-236AB*
VN2106ND
VN2110ND
VN2110K1
OT-23.
VN2106/VN2110
marking AGs sot-23
marking AGs sot23
ags marking
n1a marking
n1a sot23 marking code
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Untitled
Abstract: No abstract text available
Text: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions Units : mm • available in SM T3 (SMT, SC -59) and U M T3 (UNIT, SC -70) packages • package marking: 2SA 1036K and 2SA1577; (-!★, where ★ is hFE code • large collector current: ^C(max) = - 500 mA
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2SA1036K
2SA1577
1036K
2SA1577;
2SA1036K
29x02
10x02
08x01
2SA1036K,
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CSA1362GR
Abstract: transistor K 1413 CSA1362
Text: CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P-N -P transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m Marking CSA1362GR : AE _3 .0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER • 3 = COLLECTOR 2.6 2.4 _K°2_ 0.89 0.60
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CSA1362
CSA1362GR
CSA1362GR
transistor K 1413
CSA1362
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Untitled
Abstract: No abstract text available
Text: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE
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CSA1162
CSA1162Y-3E
CSA1162GR
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