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    S3060

    Abstract: No abstract text available
    Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		PDF S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S3060

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		PDF S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		PDF S060A6. TY059S060A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12