ISL83077EIBZA
|
|
Renesas Electronics Corporation
|
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers |
|
|
RJH3077DPK-E
|
|
Renesas Electronics Corporation
|
Insulated-Gate Bipolar Transistors (IGBT) |
|
|
ISL83077EIBZA-T
|
|
Renesas Electronics Corporation
|
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers |
|
|
NX8350TS33-AZ
|
|
Renesas Electronics Corporation
|
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application |
|
|
NX8369YK-AZ
|
|
Renesas Electronics Corporation
|
Laser Diode |
|
|