Untitled
Abstract: No abstract text available
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.
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K9K8G08U1M
K9F4G08U0M
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K9F4G08U0M
Abstract: two-plane program nand
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M
two-plane program nand
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Untitled
Abstract: No abstract text available
Text: 1 Preliminary H27UAG8T2A Series 16 Gbit 2048 M x 8 bit NAND Flash 16 Gb NAND Flash H27UAG8T2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H27UAG8T2A
H27UAG8T2A
20mA/40mA
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H27UAG8T2
Abstract: No abstract text available
Text: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Release H27UAG8T2B Series 16Gb 2048M x 8bit NAND Flash 16Gb NAND Flash H27UAG8T2B Rev 1.0 /Aug. 2010 *58b7d520-e522* 1 B26798/177.179.157.212/2010-08-06 17:39 APCPCWM_4828539:WP_0000001WP_000000
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0000001WP
H27UAG8T2B
2048M
H27UAG8T2B
58b7d520-e522*
B26798/177
H27UAG8T2
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C7478
Abstract: No abstract text available
Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2B
4224-byte
C7478
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intel nand flash
Abstract: 29f16g08 JS29F08G08CANB2 INTEL FLASH MEMORY 29F intel nand intel date code marking NAND Flash 448MB intel 29F JS29F16G08FANB1 29F08G08
Text: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 Datasheet Product Features Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes)
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JS29F04G08AANB1,
JS29F08G08CANB2,
JS29F16G08FANB1
G08FANB1
29F16G08FANB1
1000pc
intel nand flash
29f16g08
JS29F08G08CANB2
INTEL FLASH MEMORY 29F
intel nand
intel date code marking NAND Flash
448MB
intel 29F
JS29F16G08FANB1
29F08G08
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NUMONYX DDR
Abstract: NAND16GW3D2B
Text: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications
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NAND16GW3D2B
16-Gbit,
4320-byte
NUMONYX DDR
NAND16GW3D2B
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NAND16GW3D2A
Abstract: numonyx MLC NAND32GW3D4A
Text: NANDxxGW3DxA 16- or 32-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – Up to 32 Gbits of memory array – Up to 1 Gbit of spare area – Cost-effective solutions for mass storage
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32-Gbit,
4224-byte
NAND16GW3D2A
numonyx MLC
NAND32GW3D4A
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NAND02GR3B2D
Abstract: No abstract text available
Text: Numonyx NAND SLC large page 41 nm Discrete 2 and 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features • – Single and multiplane cache program – Cache read – Multiplane block erase Density – 2 Gbit: 2048 blocks ®
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Byte/1056
x8/x16,
NAND02GR3B2D
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NAND Flash
Abstract: F59L2G81A
Text: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte
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F59L2G81A
350us
NAND Flash
F59L2G81A
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K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M-Y
K9F4G08U0M
K9F4G08U
52-ULGA
52ULGA
K9K8G08U1M
K9F4G08U0M-ICB0
K9F4G08
81h-10h
K9F4G08U0M-YCB
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Untitled
Abstract: No abstract text available
Text: EN27LN4G08 EN27LN4G08 4 Gigabit 512M x 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Organization
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EN27LN4G08
it/512
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Untitled
Abstract: No abstract text available
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Kbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
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Untitled
Abstract: No abstract text available
Text: EN27LN2G08 EN27LN2G08 2 Gigabit 256M x 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Organization
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EN27LN2G08
it/512
9x11x1
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Untitled
Abstract: No abstract text available
Text: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)
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FNNM40A
48-Pin
09005aef827534f6/Source:
09005aef8275346a
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NI3205
Abstract: NAND04GW3B2
Text: Numonyx NAND SLC large page 41 nm Discrete 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features – Cache read – Multiplane block erase • Density – 4 Gbit: 4096 blocks ■ NAND Flash interface – x8 or x16 bus width
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Byte/1056
x8/x16,
NI3205
NAND04GW3B2
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SpecTek flash
Abstract: No abstract text available
Text: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)
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FNNM40A
48-Pin
09005aef827534f6/Source:
09005aef8275346a
SpecTek flash
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29f16g08
Abstract: intel nand flash JS29F16G08FANB1 intel date code marking nand flash INTEL FLASH MEMORY 29F JS29F08G08 intel nand JS29F04G08AANB1 intel 29F SD74 intel
Text: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1 Datasheet Product Features Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks
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JS29F04G08AAN29F04G08AANB1
1000pc
JS29F08G08CANB1
29F08G08CANB1
JS29F16G08FANB1
29F16G08FANB1
8-Sep-2006
312774-007US
29f16g08
intel nand flash
JS29F16G08FANB1
intel date code marking nand flash
INTEL FLASH MEMORY 29F
JS29F08G08
intel nand
JS29F04G08AANB1
intel 29F
SD74 intel
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F59L2G81A
Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
Text: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L2G81A
4bit/512Byte
F59L2G81A
F59L2G81A,
F59L2G81
two-plane program nand
bsc 60h
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MT29F32G08
Abstract: MT29F8G08MAA MT29F32G08TAA MT29F16G08QAA Micron NAND MT29F32 Micron MT29F8G08 MT29F32G MT29F16G08 MT29F8G08M
Text: TN-29-25: Improving Performance Using Two-Plane Commands Introduction Technical Note Improving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, and MT29F32G08TAA
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TN-29-25:
MT29F4G08AAA,
MT29F8G08BAA,
MT29F8G08DAA,
MT29F16G08FAA,
MT29F8G08MAA,
MT29F16G08QAA,
MT29F32G08TAA
80h-11h-80h-15h,
09005aef82cfa5d5
MT29F32G08
MT29F8G08MAA
MT29F32G08TAA
MT29F16G08QAA
Micron NAND
MT29F32
Micron MT29F8G08
MT29F32G
MT29F16G08
MT29F8G08M
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L2G81A
250us
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NAND08GW3D2A
Abstract: No abstract text available
Text: NAND08GW3D2A 8-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 256 Mbits of spare area – Cost-effective solutions for mass storage
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NAND08GW3D2A
4224-byte
NAND08GW3D2A
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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NAND08GW3F2A
Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
transistor sr61
NAND08GW3F
NAND16GW3F2A
A20-A32
transistor SR60
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