TWIN CMOS Search Results

2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

carrier detect phase shift

Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

ACE9020

Abstract: ACE9030 ACE9040 ACE9050 AMP01 ampo1
Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

Contextual Info: Si GEC PLESSEY _PRELIMINARY INFORMATION S E M I C O N D U C T O R S ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

Contextual Info: MITEL ACE9030 Radio Interface and Twin Synthesiser SE M IC O N D U C T O R Supersedes February 1997 edition, DS4288 - 1.4 DS4288 - 2.0 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

Contextual Info: ACE9030 M IT E L Radio Interface and Twin Synthesiser SE M IC O N D U C T O R Supersedes February 1997 edition, DS4288 - 1.4 DS4288 - 2.0 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

siemens opto sensor

Contextual Info: 96D SIEMENS CAPITAL/ OPTO 03756 D 7* V / * ^ 7 H DI flE3b3Sb DDDBVSb T LHi1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased req uire me nts as to re Iiabi I ity a nd safety ag ai nst false alarm. Located in a standard TO-5 hou­

Contextual Info: SIEMENS AKTIENGE SEL LSCHAF 4?E D A235bD5 DOHVflT? 2 I S I Ef i T -m -k '7 LHi 1158 LHi 1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased requirements as to reliability and safety against false alarm. Located in a standard TO -5 hou­

TC93A02AFUG

Abstract: CD Pick-Up head CD Laser pickup HFM dvd optical pickup toshiba TC93A02 Laser Diode for dvd 400 mW DVD laser head laser diode toshiba dvd laser pickup DVD pickup circuit diagram
Contextual Info: TOSHIBA TC93A02AFUG TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC93A02AFUG High-Frequency Modulation IC for Laser Diode TWIN VLD The TC93A02AFUG is a high frequency modulation IC for laser diode. This product is designed for PUH(Pick-Up Head) of

CD Pick-Up head

Abstract: TC93A02FUG TC93A02 CD Laser pickup HFM *TC93A02 dvd optical pickup toshiba DVD laser head Laser Head for CD DVD tc93a pickup HFM
Contextual Info: TOSHIBA TC93A02FUG TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC93A02FUG High-Frequency Modulation IC for Laser Diode TWIN VLD The TC93A02FUG is a high frequency modulation IC for laser diode. This product is designed for PUH(Pick-Up Head) of

2P4M P 82

Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Contextual Info: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um

TRANSISTOR 545

Contextual Info: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel

HY6264A

Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Contextual Info: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6264ALP-70

Abstract: HY6264A HY6264ALP HY6264ALJ-70 Hyundai Semiconductor HY6264A HY6264AJ HY6264ALLP HY6264AP
Contextual Info: HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION minimize current drain is unnecessary for the HY6264A Series. The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process

Contextual Info: HY62256B Series -HYUN DAI 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

0.35Um 1P4M

Abstract: nmos transistor 0.35 um
Contextual Info: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS

Contextual Info: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY638256 •HYUNDAI 32Kx 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­

HY638256

Contextual Info: HY638256 "H Y U N D A I CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells

Contextual Info: •> GOULD AMI * Semiconductors ASIC Products Gale Arrays Gould AMI's arrays are fabricated in a double or triple metal, single poly, twin-tub CMOS process. They offer the CMOS advantages of low power dissipation, broad power supply voltage range (2.5 to 5.5 Volts), and high

Contextual Info: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY62256A-I Series »HYUNDAI 32K X 6-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit