TTP44DE Search Results

HM6216514I

Abstract: HM6216514LTTI-5SL HM6216514LTTI-5
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HM628100LTTI-5SL

Abstract: A17a
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-M bit high speed static RAM organized 256-k word x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high

Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith

Contextual Info: PC/100 SDRAM HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

Hitachi DSA00164

Contextual Info: HM5216805 Series, HM5216405 Series 16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword x 8-bit × 2-bank/2-Mword × 4-bit × 2-bank ADE-203-304E Z Rev. 5.0 November 1, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

HM5241

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM blE J> m 44Sb203 DG23fl71 b77 • H I T S HM 5216800 S e rie s HM 5416800 S e rie s Prelim inary 1,043,576-worû x 8-bit x 2-bank Synchronous Dynamic RAM 0 HITACHI AH inputs and outputs are referred to the rising edge o f the clo ck in p u t. T he H M 5216800

Contextual Info: HM5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304D Z Rev. 4.0 Jun. 12, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

HM6216255HI

Abstract: HM6216255HJPI HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15 Hitachi DSA0044
Contextual Info: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high

HM62W16255HI

Abstract: HM62W16255HJPI HM62W16255HJPI-15 HM62W16255HTTI HM62W16255HTTI-15 Hitachi DSA0044
Contextual Info: HM62W16255HI Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1038A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

HM62W16255H

Abstract: HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA0044
Contextual Info: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-751D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high

HM6216255H

Abstract: HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 HM6216255HTT-10 HM6216255HTT-12 Hitachi DSA0044
Contextual Info: HM6216255H Series 4M high Speed SRAM 256-kword x 16-bit ADE-203-763D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary, Rev. 0.0 Jun. 26, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

Hitachi DSAUTAZ006

Contextual Info: HM62162514I Series Package Dimensions HM6216514LTTI Series TTP-44DE As of July, 2001 Unit: mm 18.41 18.81 Max 23 10.16 44 0.80 *0.27 ± 0.07 0.25 ± 0.05 22 0.80 0.13 M 11.76 ± 0.20 1.005 Max *Dimension including the plating thickness Base material dimension

Hitachi DSAUTAZ006

Contextual Info: HM62V16514I Series Package Dimensions HM62V16514LTTI Series TTP-44DE As of July, 2001 Unit: mm 18.41 18.81 Max 23 10.16 44 0.80 *0.27 ± 0.07 0.25 ± 0.05 22 0.80 0.13 M 11.76 ± 0.20 1.005 Max *Dimension including the plating thickness Base material dimension

HM6216255CTTI12

Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed

ADE-203-1303A

Abstract: HM6216514LTTI-5SL HM6216514LTTI-5 Hitachi DSAUTAZ006 HM6216514I Series
Contextual Info: HM6216514I Series Wide Temperature Range Version 8 M SRAM 512-kword x 16-bit ADE-203-1303A (Z) Preliminary Rev. 0.1 Feb. 25, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS

Contextual Info: HM62W16255HI Series Ordering Information Type No. Access time Package HM62W16255HJPI-15 15 ns 400-mil 44-pin plastic SOJ CP-44D HM62W16255HTTI-15 15 ns 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM62W16255HJPI Series A0 A1 A2 A3 A4 CS I/O1

HM62W16255H

Abstract: HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA00189
Contextual Info: HM62W16255H シリーズ 4M High Speed SRAM 256-kword x 16-bit ADJ-203-270B (Z) ’98. 9. 15 Rev. 1.0 概要 HM62W16255H シリーズは 256k ワード×16 ビット構成の 4M ビット高速スタティック RAM です。CMOS （4 トランジスタ+2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実

HM51W16405

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

corrugated carton

Abstract: FP-32D package IC Packing and Labelling Specification
Contextual Info: Packing Specifications Contents 1. Forms of Package Packing 2. Moistureproof Packing 3. Taping for IC 4. Taping for IC Memorys Packing Specifications 1. Forms of Package Packing The forms of IC delivery include, as shown below, leaving the IC unsealed in a packing box and using

HM6216255CJPI12

Abstract: HM6216255CTTI12 HM6216255HCJPI-12 HM6216255HCTTI-12 Hitachi DSA0047
Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305B (Z) Rev. 2.0 Dec. 5, 2002 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed