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    TTC0002 Price and Stock

    Toshiba America Electronic Components TTC0002(Q)

    TRANS NPN 160V 18A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TTC0002(Q) Bulk 143 1
    • 1 $4.24
    • 10 $2.798
    • 100 $4.24
    • 1000 $1.52875
    • 10000 $1.52875
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    Avnet Americas TTC0002(Q) Tray 15 Weeks 100
    • 1 -
    • 10 -
    • 100 $1.87119
    • 1000 $1.65105
    • 10000 $1.65105
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    Mouser Electronics TTC0002(Q) 394
    • 1 $3.86
    • 10 $2.62
    • 100 $1.87
    • 1000 $1.52
    • 10000 $1.52
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    TME TTC0002(Q) 190 1
    • 1 $2.94
    • 10 $2.73
    • 100 $2.11
    • 1000 $2.11
    • 10000 $2.11
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    Chip1Stop TTC0002(Q) Bulk 1
    • 1 $3.55
    • 10 $3.55
    • 100 $3.55
    • 1000 $3.55
    • 10000 $3.55
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    EBV Elektronik TTC0002(Q) 21 Weeks 100
    • 1 -
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    TTC0002 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TTC0002 Toshiba TTC0002 - TRANSISTOR 18 A, 160 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
    TTC0002(Q) Toshiba TTC0002 - Trans GP BJT NPN 160V 18A 3-Pin(3+Tab) TO-3PL Original PDF

    TTC0002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TTC0002

    Abstract: TTA0002 2-21F1A
    Text: TTC0002 東芝トランジスタ シリコンNPN三重拡散形 TTC0002 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 160 V 最小 • TTA0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


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    PDF TTC0002 TTA0002 2-21F1A TTC0002 TTA0002 2-21F1A

    TTC0002

    Abstract: TTA0002 100-W 2-21F1A
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


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    PDF TTC0002 TTA0002 TTC0002 TTA0002 100-W 2-21F1A

    TTA0002

    Abstract: TTC0002 100-W 2-21F1A
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = -160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


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    PDF TTA0002 TTC0002 TTA0002 TTC0002 100-W 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = -160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


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    PDF TTA0002 TTC0002

    Untitled

    Abstract: No abstract text available
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


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    PDF TTC0002 TTA0002

    TTC0002

    Abstract: 2-21F1A TTA0002
    Text: TTA0002 東芝トランジスタ シリコンPNP三重拡散形 TTA0002 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = -160 V 最小 • TTC0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


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    PDF TTA0002 TTC0002 2-21F1A TTC0002 2-21F1A TTA0002

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    TIS84

    Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
    Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125


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    PDF TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


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    PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322