tt 250
Abstract: stt250 TT250 tt250n
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 250 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 250 N, TD 250 N, DT 250 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 265 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 265 N, TD 265 N, DT 265 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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170n10
Abstract: tt 95 n 12
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 170 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 170 N, TD 170 N, DT 170 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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STT251
Abstract: TT251N TT 251 N 14
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 251 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 251 N, TD 251 N, DT 251 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 210 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 210 N, TD 210 N, DT 210 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 215 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 215 N, TD 215 N, DT 215 N Elektrische Eigenschaften Höchstzulässige Werte Periodische Vorwärts- und
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information TT 285 N 28,5 35 5 6 115 80 9 18 AK M8 92 18 K A K1 G1 K2 G2 VWK Okt. 1996 TT 285 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und
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STT150
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 150 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 150 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values
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0745
Abstract: No abstract text available
Text: Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT 380 N 12.18 N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
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13Technical
0745
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Abstract: No abstract text available
Text: Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT W3C 145 N 12.18 ISOPACK N W3 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C.T vj max
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT W3C 145 N 12.18 ISOPACK N W3 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C.T vj max
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thyristor tt 25
Abstract: thyristor TT 45 N 1200 EUPEC tt 170 n 14 thyristor TT 18 N thyristor tt 18 n 800 S-108 EUPEC Thyristor TT 170
Text: Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT W3C 145 N 12.18 ISOPACK N W3 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C.T vj max
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RSS8000
Abstract: Radar array antenna RSS8000/P
Text: TT & ONS S M E E I YST LICAT S 8000/P Portable EW APP R G O F N I IN A R Radar Threat T RSS8000/P Radar Threat Simulator Simulator ¾ Portable, lightweight unit ¾ Rugged construction ¾ 500 MHz - 18 GHz Coverage ¾ All Complex Emitters 9 Windows GUI based software
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8000/P
RSS8000/P
RSS8000
Radar
array antenna
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Untitled
Abstract: No abstract text available
Text: 18 AM FREEDM 84A1024L ASSP Telecom Standard Product Data Sheet Released be r, 20 04 04 :0 4: PM7311 ay ,0 1D ec em FREEDM 84A1024L er In co n W ed ne sd Frame Engine and Data Link Manager 84A1024L Released Issue 2: Do wn l oa de d by C on te n tT ea m of Pa
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84A1024L
PM7311
84A1024L
PMC-2021832,
520-Pin
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Untitled
Abstract: No abstract text available
Text: 3: 18 AM TBS 9953 ASSP Telecom Standard Product Data Sheet Released id ay ,0 7F eb ru ar y, 20 03 06 :2 PM5307 in er In co n Fr TBS™ 9953 Data Sheet Released Issue 6: January 2003 Do wn lo ad e d by Co nt en tT ea m of Pa rtm OC-192 TelecomBus Serializer
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PM5307
OC-192
PMC-2001530,
34x34
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Untitled
Abstract: No abstract text available
Text: eb ru ar y, 20 03 06 :3 0: 18 AM PM7389 FREEDM-84A1024 Data Sheet Preliminary n Fr id ay ,0 7F FREEDM -84A1024 DATA SHEET Proprietary and Confidential Preliminary Issue 3: November 2002 Do wn lo ad e d by Co nt en tT ea m of Pa rtm in er In co Frame Engine and Datalink Manager
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PM7389
FREEDM-84A1024
-84A1024
84A1024
PMC-2000689,
31x31
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EUPEC powerblock TT 18 N 12
Abstract: EUPEC powerblock TT 18 N 14 EUPEC powerblock TT 18 N 16
Text: EUPEC blE D • 3403217 □□□1042 17L. H U P E C TT 18 N, TD 18 N, DT 18 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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2SK18
Abstract: 2SK18A 2SK15 K18A 400M transis differential amplifier application
Text: 18 2SK 18A 2SK ^ S IL IC O N N-CHANNEL JUNCTION DUAL FIELD EFFECT TRANSIS' o is X mm a TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm Differential Amplifier Application 0a*OMAX. y- H S Œ Ü j M ' S I a B A iia S tT -t ; ; 0 & 5 O ÌIA X . IVQS1- V QS2I =lOmV M a x .
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2SK18A
2SK18A)
0CL45
2SK15
--200flA
2SK18
2SK18A
2SK15
K18A
400M
transis
differential amplifier application
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S3015A
Abstract: MS7101 TI 7A 1SV11 1SV25 1SV45 MS7102 MS7111 MS7112 S3015B
Text: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë
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1SV11
1SV25
1SV45
MS7101
MS7102
MS7111
MS7112
S3015A
S3015B
S3046
TI 7A
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S3015A
Abstract: ss 211 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B
Text: 178 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë
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1SV11
1SV25
1SV45
MS7101
MS7102
MS7111
MS7112
S3015A
S3015B
S3046
ss 211
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S3015A
Abstract: 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B S3046
Text: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë
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1SV11
1SV25
1SV45
MS7101
MS7102
MS7111
MS7112
sc-11
-28UNF-2ATÂ
i042U
S3015A
S3015B
S3046
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S3015A
Abstract: SV14B SV24B SV36C ss 211 SV24 1SV11 1SV25 1SV45 MS7101
Text: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë
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1SV11
1SV25
1SV45
MS7101
MS7102
MS7111
MS7112
S3015A
S3015B
S3046
SV14B
SV24B
SV36C
ss 211
SV24
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TI 7A
Abstract: S3015A 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B
Text: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë
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1SV11
1SV25
1SV45
MS7101
MS7102
MS7111
MS7112
S3015A
S3015B
S3046
TI 7A
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PDF
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Untitled
Abstract: No abstract text available
Text: W a n A M P com pany GaAs SPDT Switch DC - 20 GHz MASW2 1 1 1 1 GND Features • • • • • • • G ND tt GNO RF1 GND 4 41 4 A1 Guaranteed Specifications* @ +25°C* Frequency Range RF t Very B roadband Perform ance Low Insertion Loss, 1.75 dB T ypical @ 18 GHz
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DC-10
DC-18
DC-20
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