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    TT 105 N 1200 Search Results

    TT 105 N 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    CS1200 Coilcraft Inc Current Sense Transformer, 35A, 1:200 Visit Coilcraft Inc Buy
    CS1200L Coilcraft Inc Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT Visit Coilcraft Inc Buy
    HPH5-1200LD Coilcraft Inc General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc

    TT 105 N 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B2HKF

    Abstract: thyristor TT 430 N 22 TT 46 N 800 TT 56 N thyristor tt 250 n 16 thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 121 thyristor TT 430 thyristor tt 500 n 16
    Text: ISOPACK Modules Type ISOPACK Module VDRM, VRRM IFRMSM V A VDSM = VDRM VRSM = VRRM + 100 V IFSM ∫ i²dt Id/tC A A²s A/°C V TO 10 ms, tvj 10 ms, tvj max max rT RthJC RthCK tvj max °C V mΩ °C/W °C/W tvj = tvj max tvj = tvj max per arm per arm Single phase diode bridges


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    PT150S16

    Abstract: No abstract text available
    Text: DIODE 150A Avg 1200~1600 Volts •回路図 CIRCUIT PT150S12 PT150S16 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) + ∼ ∼ ∼ φ − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1


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    PDF PT150S12 PT150S16 TcTt70 PT150S16 125VRM 25IFM

    PT150S16

    Abstract: No abstract text available
    Text: DIODE 150A Avg 1200~1600 Volts •回路図 CIRCUIT PT150S12 PT150S16 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) + ∼ ∼ ∼ − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1


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    PDF PT150S12 PT150S16 TcTt70 PT150S16 125VRM 25IFM

    PT150S16

    Abstract: No abstract text available
    Text: DIODE 150A Avg 1200~1600 Volts •回路図 CIRCUIT PT150S12 PT150S16 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) + ∼ ∼ ∼ φ − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1


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    PDF PT150S12 PT150S16 TcTt70 PT150S16 125VRM 25IFM

    EUPEC TT 105 N 12

    Abstract: EUPEC TT 105 N 14 EUPEC tt 105 N 16 EUPEC tt 105 EUPEC TT 105 N of EUPEC tt 105 N 16 TT 105 N 12 DT105N EUPEC 105 N 16 L eupec tt105
    Text: EUPE.C 34032^7 DDD1074 4fib « U P E C blE 3> TT 105 N, TD 105 N, DT105 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values 600, 800 1000, 1200 1400,1600 V V V V rsm = VRRM + 100 V Itrmsm Itavm Itsm 160 105 2600


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    PDF 0DD1074 DT105 EUPEC TT 105 N 12 EUPEC TT 105 N 14 EUPEC tt 105 N 16 EUPEC tt 105 EUPEC TT 105 N of EUPEC tt 105 N 16 TT 105 N 12 DT105N EUPEC 105 N 16 L eupec tt105

    EUPEC TT 105 N 12

    Abstract: EUPEC TT 105 N 14
    Text: EUPE.C L IE ¡D • 34032=17 0 0 D1 D7 H Hfib « U P E C TT 105 N, TD 105 N, DT105N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state


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    PDF DT105N EUPEC TT 105 N 12 EUPEC TT 105 N 14

    EUPEC tt 105 N 16

    Abstract: EUPEC tt 66 N 16 EUPEC TT 56 n 16 EUPEC TT 66 EUPEC TT 46 n 16 EUPEC TT 25 N EUPEC Thyristor TT 56 N PHASE CONTROL THYRISTOR MODULE TT 56 N of EUPEC tt 105 N 16 TT105N
    Text: Phase control thyristor modules Vdrm •t r m s m It s m eupec m te / i 2dt I tavm ^ c D V TO • 3 4 D 3 5 117 0D0Q114 (dv/dt)cr (di/dt)cr It tts RthJC ■ upec RthCK tv j m ax V rrm V A 10 ms, 10 ms, tv) max tvj max 180°el sin. A A2s A/°C tv , = tv j


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    PDF 0D0Q114 EUPEC tt 105 N 16 EUPEC tt 66 N 16 EUPEC TT 56 n 16 EUPEC TT 66 EUPEC TT 46 n 16 EUPEC TT 25 N EUPEC Thyristor TT 56 N PHASE CONTROL THYRISTOR MODULE TT 56 N of EUPEC tt 105 N 16 TT105N

    thyristor TT 46 N 1200

    Abstract: thyristor TT 46 N thyristor TT 36 N TT 46 N 1600 TT 46 N 800 TT 80 N 1200 TT 95 N 1200 thyristor TT 36 DT18N td18n
    Text: - 'i ase con'ro’ thyristor modules "ype It r m s m V d iim It s m / i 2d t hAVM^C V TO rT ( d i/ d t ) cr t„ = DIN Wj max IEC 747-6 (dv/dt)cr RthJC RthCK tv, max Outline V rhm V d jm = V crm V r ev i = V r r m + 100 V V A 10 ms, 10 ms. w 180 ”el sin.


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    thyristor TT 45 N 1200

    Abstract: TT 56 N 1200 PHASE CONTROL THYRISTOR MODULE TT 56 N thyristor TT 46 N thyristor TT 46 N 1200 tt 46 n 1200 thyristor TT 36 N thyristor TT 18 N 1400 EUPEC TT 66 thyristor 45 n 1200
    Text: Phase control thyristor modules EUPEC Type V drm •t r m s m It s m aMDBtîT? D D O D l l t MTE D / ¡ 2d t W m^C TTS • It d i/d t cr (d v/dt)cr Rthjc tv ,= tvj = tv j m ax tv] max typ. DIN IEC 747-6 DIN IEC 747-6 180 °el sin. V mQ A/pis V /ns K /W V(TO>


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    PDF 34D32T7 thyristor TT 45 N 1200 TT 56 N 1200 PHASE CONTROL THYRISTOR MODULE TT 56 N thyristor TT 46 N thyristor TT 46 N 1200 tt 46 n 1200 thyristor TT 36 N thyristor TT 18 N 1400 EUPEC TT 66 thyristor 45 n 1200

    L2860

    Abstract: No abstract text available
    Text: Prelim inary Data Sheet 0M120L60SB OMIOOF6OSB OM90L120SB 0M7QF120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 150 A m p IG BT s With FR E D Diodes FEATURES • • • • • • • Includes Internal FRED Diode


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    PDF 0M120L60SB OM90L120SB 0M7QF120SB MIL-S-19500, 100F60SB 70F120SB L2860

    E80276

    Abstract: RM400HA-20S aish
    Text: RM400HA-20S,-24S m m ffl ìé 7 A O ^ | E o K <C ) ¡gftB 30210 RM400HA-20S,-24S ì i à É X "f 7 ? > (Tj = 25 °C) 1Í ^ IE il g Æ -y 7. m 20 24 e - Î? Σ i£ L £ * Œ 1000 1200 V V drm e - ÿ # * * iS U if c « Œ 1100 1250 V V r(d c ) U M m s


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    PDF RM400HA-20S E80276 aish

    thyristor TT 46 N

    Abstract: TT 105 N 12 thyristor tt 162 n 12 thyristor TT 46 N 12 TT 46 N 800 thyristor TT 430 N 22 tt 104 n 12 thyristor tt 18 f 1000 thyristor TT 36 N thyristor tt 500 n 16
    Text: Phase Control Thyristor Modules T ype V drm V rrm V Itrmsm A V dsm = V drm V rsm = V rrm+100V Itsm A 1 0 ms, Jpdt A zs 1 0 ms, ^vj max tyj max X103 350 0,61 ItAVM^c A /°C 180° el sin V TO V rT (d i/d t)cr tq (d v /d t)cr m fì MS typ. V/|JS DIN IEC 747-6


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    PDF 00021b? thyristor TT 46 N TT 105 N 12 thyristor tt 162 n 12 thyristor TT 46 N 12 TT 46 N 800 thyristor TT 430 N 22 tt 104 n 12 thyristor tt 18 f 1000 thyristor TT 36 N thyristor tt 500 n 16

    thyristor TT 46 N

    Abstract: thyristor tt 66 n 16 thyristor tt 121 thyristor TT 95 N 1200 thyristor TT 36 N thyristor tt 500 n 16 TT105N TT 56 N 1200 thyristor tt 56 n 14 TT 93 N 08
    Text: Phase Control Thyristor Modules T ype V V V dsm V It r m drm V rrm = V rsm sm It s m Jpdt llA V M /tc V T O fT (di/dt) cr tq A A 2S A /° C V m ß A /|J S MS V /|js DIN IEC 747-6 A 10 drm m s, ^vj max = V rrm+100V 10 m s, ^vj max 180° el s in tvi = Vi =


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    thyristor TT 46 N 1200

    Abstract: thyristor tt 162 n 12 thyristor tt 142 n 12 thyristor TT 31 N 12 TD25N TT 93 N 08 thyristor TT 46 N 12 TT 46 N 12 thyristor TD 25 N PHASE CONTROL THYRISTOR MODULE TT 56 N
    Text: Phase control thyristor modules Type Itrmsm V oR M I tsm i2dt / IfA V M ^C V TO (di/dt)ci tq (dv/dt)CF typ D IN 180 °el IEC 747-6 sin. V /( iS °c/w “C/W °c RlhJC R|hCK tv) max V rrm Vdsm = Vdrm V rsm = V r r M f100 V V Baseplate = A 10 ms, 10 ms, 180 °el


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    PDF TD18N DT18N TD25N N2600 N1200 N2400* thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 142 n 12 thyristor TT 31 N 12 TT 93 N 08 thyristor TT 46 N 12 TT 46 N 12 thyristor TD 25 N PHASE CONTROL THYRISTOR MODULE TT 56 N

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    MB11A02

    Abstract: thyristor cs3 MB11A06 cs3 thyristor thyristor tt 142 n
    Text: POüJEREX INC "TÏ TETMbEl D0D1Ö35 S D T-S lZ - H C-Series Fast Single Diode Modules Vrrm IFSM trr typical VlSOL (Amps) (°C) (Volts) (Amps) (fisec) (Vrms) Package 20 20 20 50 50 50 100 100 100 200 300 121 121 121 105 105 105 60 60 60 60 60 600 1000 1200


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    PDF CS24/CS34 CS340602 CS341002 CS341202 CS240650 CS241050 CS241250 CS240610 CS241010 CS241210 MB11A02 thyristor cs3 MB11A06 cs3 thyristor thyristor tt 142 n

    23/MIAE

    Abstract: No abstract text available
    Text: /> 1 TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H TM 400D Z/CZ/P2/UZ-M ,“H,-24,-2H • IT A V • V rrm • V drm •mm . 400A . £ — ¿ 7 f t à g l / i 2 i t t i ï - •■ t’— ■400/800/1200/1600 V ■400/800/1200/1600 V • ÿ 'J 'J I/T '— A


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    PDF TM400DZ/CZ/PZ/UZ-M 23/MIAE

    MDD172-16N1

    Abstract: M235A E72873 MDD172 MDD172-06N1 MDD172-08N1 MDD172-12N1 MDD172-18N1 ITT DIODE 129
    Text: MbfibEBb D D D 1 7 1 S 7b2 H I X Y n i x Y S Diode Modules MDD172 Itav = 2 x 190 a < < i > > 700 900 1300 1500 1700 1900 i VRRM = 600-1800 V 600 800 1200 1400 1600 1 8 00 * Type V ersion 1 M D D 172-06N1 M D D 172-08N1 M D D 172-12N 1 M D 0172-14N 1 M D D 172-16N1


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    PDF MDD172 MDD172-06N1 MDD172-08N1 MDD172-12N1 MD0172-14N1 MDD172-16N1 MDD172-18N1 MDD172-16N1 M235A E72873 MDD172-06N1 MDD172-08N1 MDD172-12N1 MDD172-18N1 ITT DIODE 129

    TT 80 N 1200

    Abstract: ac switches isoPACK z85n DDB6U20N B6U20 TTB6C B6U60 M/MPC 2810
    Text: ISOPACK Modules Type V dr m . VpRM V dsm V rsm Ifr m s m = = V rrm + 100 V V A ¡FSM / i 2d t 10 m s 10 ms, tv, tv -11,1 . A A 2s ld/tc A /° C V T O Tt Ivi ' t«i = t., V R th J C R th C K tv , p e r a rm p e r a rm mQ °c/w °c/w °c '' 1• O u tlin e


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    PDF B2U15 B6U20 B6U60 B6U70 B6U130 TT 80 N 1200 ac switches isoPACK z85n DDB6U20N TTB6C M/MPC 2810

    Untitled

    Abstract: No abstract text available
    Text: •% M 7 \/s . — 0 y ^ y y LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS MXY Low Profile with Horizontal Mounting m FEATURES • 105°C3000H#P«IK * W S » # W f 5 p nao Load Life : 105‘C 3000 hours with horizontal mounting. Suitable for flat equipment design.


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    PDF C3000H 120Hz) 00-350W 18Ap-p/10 100kHz 20X30 20X35 20X40 20X45 20X50

    B2HKF

    Abstract: TDB2HKF85 TT 80 N 1200 TDB2HKF TTB6C B6HK110N
    Text: ISOPACK Modules Type Vdrm, V r r m V dsm = Itsm 10 ms, / i 2dt Ic/tc V TO 10 ms, ( Ir ms^ c ) tvj t'.'i max ^v: max A A A 2s It r m s m V drm V r s m = V r r m + 100 V V A /°C rT Rthjc R th C K = t»¡ = per arm per arm m a* Wj max tv j max Outline V mi2


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    5252 F 1006

    Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
    Text: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n


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    PDF K/10-- K/10-10 5252 F 1006 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201

    Untitled

    Abstract: No abstract text available
    Text: EUPEC T> 52E T 195 F 34032=17 D[]0G4fl7 Û70 ^ I I P E C 7= 2 5 - / 9 Typenreihe/Type range 200 * 400 * 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 200.1300 V 200. 1300


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    Untitled

    Abstract: No abstract text available
    Text: l is t m m Products i/U - X fc Series o f p r o DUCTS « Appearance m Features- Application j£ te * E D C g liS B ( ju F ) tffl-S ttfflfC ) Rated Voltage Capacitance range Temp range 63 RFA • ■- m m ■General purpose f Plastic film chip capacitors


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    PDF AC250 AC125 170page)